Searcharxiv⌕ Search

arXiv subjects

Sven Höfling

Publications and source records attributed to Sven Höfling.

At least 55 records · Page 3Linked to original sources

Direct experimental access to the bulk band inversion in a topological metamaterial

Topological phases in exciton-polaritons and other metamaterial platforms have attracted significant attention due to their flexibility as Hamiltonian simulators. In previous works, signatures of topology have mainly been investigated from the perspective of edge states - strongly localised modes with exponentially decaying intensity into the bulk. While these edge states have become the hallmark of topological systems as they can facilitate non-reciprocal transport in potential applications, the topology is fundamentally encoded in the bulk band structure. In particular, the momentum-dependence of the eigenstates, i.e., the wave functions, determines the topology, usually reflected in a bulk band inversion. We present a band inversion in the paradigmatic Su-Schrieffer-Heeger (SSH) model, characterised by a reversal of the sublattice symmetry, quantified by the expectation value $\langle σ_\mathrm{x} \rangle$, when going from the centre of the Brillouin zone to the zone boundary. Here, we show direct experimental access to this bulk band inversion in SSH exciton-polariton chains, using two-dimensional momentum-space ($k$-space) mapping - without the need for real-space imaging. This technique enables the direct observation of the momentum-dependent inversion of the sublattice symmetry in the bulk bands, providing a unique perspective on topological phases beyond conventional edge state measurements. Our approach establishes effective momentum-resolved sublattice phase measurements as a powerful tool for accessing the wave function and bulk topology in photonic and polaritonic systems and beyond.

physics.optics↗

Tuning the non-linear interactions of hybrid interlayer excitons in bilayer MoS2 via electric fields

Hybrid interlayer excitons in bilayer MoS2 are a promising platform for nonlinear optics due to their intrinsic dipolar character, which combines in-plane and out-ofplane dipole moments. In this work, we directly probe the nonlinear exciton-exciton interactions of hybrid interlayer excitons. By applying an external out-of-plane electric field, we polarize the excitons to enhance their mutual dipolar interactions, thereby deliberately favoring these repulsive contributions over competing attractive manybody corrections. We furthermore establish a fully microscopic theoretical description of these effects to explain the core experimental results. The tuning results in a significantly larger blueshift compared to the zero-field case and perspectively opens an avenue to even switch between repulsive and attractive interaction potentials. Our findings establish that strong nonlinearities can be tuned via an external electric field, providing a new degree of control over exciton interactions beyond density tuning alone.

cond-mat.mtrl-sci↗

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.

cond-mat.mes-hall↗

Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices.

physics.app-ph↗

Two-Photon Interference from an InAs Quantum Dot emitting in the Telecom C-Band

Two-photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C-band with a raw two-photon interference visibility of $V_{HOM}=(71.9\pm0.2)$ % is demonstrated. This is achieved by a two-fold approach: an improvement of the molecular beam epitaxial growth for better QDs, and integration of the QDs into an optical circular Bragg grating resonator for a Purcell enhancement of the radiative decay rate. The quantum optical properties of the fabricated device are studied by means of time-correlated single-photon counting under quasi-resonant excitation of the charged exciton line. A reduced lifetime of $T_1=(257.5\pm0.2)$ ps is found corresponding to a Purcell factor of $F_P\geqq(4.7\pm0.5)$. Pronounced anti-bunching of the second-order autocorrelation function at zero time delay $g^{(2)} (0)=(0.0307\pm0.0004)$ confirms the single-photon emission character. The two-photon interference is demonstrated with an unbalanced Mach-Zehnder interferometer in Hong-Ou-Mandel configuration. We discuss strategies how to further improve the indistinguishability, and provide a survey of the state-of-the art.

quant-ph↗

Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.

cond-mat.dis-nn↗

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

Negatively charged boron vacancies ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) are emerging as promising solid-state spin qubits due to their optical accessibility, structural simplicity, and compatibility with photonic platforms. However, quantifying the density of such defects in thin hBN flakes has remained elusive, limiting progress in device integration and reproducibility. Here, we present an all-optical method to quantify $\mathrm{V_B^-}$ defect density in hBN by correlating Raman and photoluminescence (PL) signatures with irradiation fluence. We identify two defect-induced Raman modes, D1 and D2, and assign them to vibrational modes of $\mathrm{V_B^-}$ using polarization-resolved Raman measurements and density functional theory (DFT) calculations. By adapting a numerical model originally developed for graphene, we establish an empirical relationship linking Raman (D1, $E_\mathrm{2g}$) and PL intensities to absolute defect densities. This method is universally applicable across various irradiation types and uniquely suited for thin flakes, where conventional techniques fail. Our approach enables accurate, direct, and non-destructive quantification of spin defect densities down to $10^{15}$ defects/ cm${}^3$, offering a powerful tool for optimizing and benchmarking hBN for quantum optical applications.

quant-ph↗

Observation of Kardar-Parisi-Zhang universal scaling in two dimensions

Equilibrium and nonequilibrium states of matter can exhibit fundamentally different behavior. A key example is the Kardar-Parisi-Zhang universality class in two spatial dimensions (2D KPZ), where microscopic deviations from equilibrium give rise to macroscopic scaling laws without equilibrium counterparts. While extensively studied theoretically, direct experimental evidence of 2D KPZ scaling has remained limited to interface growth so far. Here, we report the observation of universal scaling consistent with the KPZ universality class in 2D exciton-polariton condensates -- quantum fluids of light that are inherently driven and dissipative, thus breaking equilibrium conditions. Using momentum-resolved photoluminescence spectroscopy as well as space- and time-resolved interferometry, we probe the phase correlations across microscopically different systems, varying drive conditions in two distinct lattice geometries. Our analysis reveals correlation dynamics and scaling exponents in excellent agreement with 2D KPZ predictions. These results establish exciton-polariton condensates as a robust experimental platform for exploring 2D nonequilibrium universality quantitatively, and open new avenues for investigating the emergence of coherence in interacting quantum systems far from equilibrium.

quant-ph↗

Artificial Gauge Fields and Dimensions in a Polariton Hofstadter Ladder

Artificial gauge fields allow uncharged particles to mimic the behavior of charged particles subjected to magnetic fields, providing a powerful platform for exploring topological physics. Neutral particles, like photons, are typically unaffected by real magnetic fields. However, it is possible to introduce artificial gauge fields that control the effective dynamics of these neutral particles. Topological exciton-polariton lasers have attracted considerable interest, in part due to the wide range of tunable system parameters, but often require strong magnetic fields to realise propagating topological edge states. Here we show, that by using an artificial gauge field the topological Hall effect in a micron-scale micropillar chain is experimentally realised, exploiting the circular polarisation of polaritons as an artificial dimension. By careful rotational alignment of elliptical micropillars, we introduce an effective plaquette phase that induces strictly polarisation-dependent edge-state propagation, demonstrating non-reciprocal transport of the polariton pseudospins. Our results demonstrate that the dimensionality limitation of topological interface states as well as requirements for strong external magnetic fields in coupled topological laser arrays can be overcome by utilizing polarisation effects and careful engineering of the potential landscape. Our results open new ways towards the implementation of topological polariton lattices and related optically active devices with additional artificial dimension.

physics.optics↗

Extraction of coherence times of biexciton and exciton photons emitted by a single resonantly excited quantum dot under controlled dephasing

The visibility of two-photon interference is limited by the indistinguishability of the photons. In the cascaded emission of a three-level system, such as a single quantum dot, the indistinguishability of each photon in the pair is primarily affected by two main factors: the temporal correlation between paired photons and dephasing. Investigating the individual effects of these factors on photon indistinguishability is challenging, as both factors affect it simultaneously. In this study, we investigate the temperature-dependent two-photon interference visibility of the biexciton and exciton photons emitted from a single quantum dot under two-photon resonant excitation, while keeping temporal correlation between the paired photons intact. Finally, we simultaneously extract the coherence times of the biexciton and exciton photons as a function of temperature.

quant-ph↗

Analytical Fidelity Calculations for Photonic Linear Cluster State Generation

By precisely timed optical excitation of their spin, optical emitters such as semiconductor quantum dots or atoms can be harnessed as sources of linear photonic cluster states. This significantly reduces the required resource overhead to reach fault-tolerant optical quantum computing. Here, we develop an algorithm that analytically tracks the global density matrix through the process of the protocol for generating linear-cluster states by Lindner and Rudolph. From this we derive a model to calculate the entangling gate fidelity and the state fidelity of the generated linear optical cluster states. Our model factors in various sources of error, such as spin decoherence and the finite excited state lifetime. Additionally, we highlight the presence of partial reinitialization of spin coherence with each photon emission, eliminating the hard limitation of coherence time. Our framework provides valuable insight into the cost-to-improvement trade-offs for device design parameters as well as the identification of optimal working points. For a combined state-of-the-art quantum dot with a spin coherence time of T_2^*=535 ns and an excited state lifetime of τ=23 ps, we show that a near-unity entangling gate fidelity as well as near-unity state fidelity for 3-photon and 7-photon linear cluster states can be reached.

quant-ph↗

Deterministic and highly indistinguishable single photons in the telecom C-band

Quantum dots are promising candidates for deterministic single-photon sources, yet achieving high photon indistinguishability at telecom wavelengths remains a critical challenge. Here, we report a quantum dot-based single-photon source operating in the telecommunications C-band that achieves a raw two-photon interference visibility of up to (91.7+-0.2)%, thus setting a new benchmark for indistinguishability in this spectral range. The device consists of an indium arsenide (InAs) quantum dot embedded within indium aluminum gallium arsenide (InAlGaAs) and integrated into a circular Bragg grating resonator. We explore multiple optical excitation schemes to optimize coherence and source performance. To our knowledge, this is the first demonstration of two-photon interference visibility exceeding 90% from a quantum-dot emitter in the telecommunications C-band, advancing the viability of solid-state sources for quantum communication and photonic networks.

quant-ph↗

Deterministic Quantum Dot Cavity Placement Using Hyperspectral Imaging with High Spatial Accuracy and Precision

Single emitters in solid state are great sources of single and entangled photons. To boost their extraction efficiency and tailor their emission properties, they are often incorporated in photonic nanostructures. However, achieving accurate and reproducible placement inside the cavity is challenging but necessary to ensure the highest mode overlap and optimal device performance. For many cavity types -- such as photonic crystal cavities or circular Bragg grating cavities -- even small displacements lead to a significantly reduced emitter-cavity coupling. For circular Bragg grating cavities, this yields a significant reduction in Purcell effect, a slight reduction in efficiency and it introduces polarization on the emitted photons. Here we show a method to achieve high accuracy and precision for deterministically placed cavities on the example of circular Bragg gratings on randomly distributed semiconductor quantum dots. We introduce periodic alignment markers for improved marker detection accuracy and investigate overall imaging accuracy achieving $(9.1 \pm 2.5) nm$ through image correction. Since circular Bragg grating cavities exhibit a strong polarization response when the emitter is displaced, they are ideal devices to probe the cavity placement accuracy far below the diffraction limit. From the measured device polarizations, we derive a total spatial process accuracy of $(33.5 \pm 9.9) nm$ based on the raw data, and an accuracy of $(15 \pm 11) nm$ after correcting for the system response, resulting in a device yield of $68 \%$ for well-placed cavities.

cond-mat.mes-hall↗

Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor

Controlling exciton relaxation and energy conversion pathways via their coupling to photonic modes is a central task in cavity-mediated quantum materials research. In this context, the light-matter hybridization in optical cavities can lead to intriguing effects, such as modified carrier transport, enhancement of optical quantum yield, and control of chemical reaction pathways. Here, we investigate the impact of the strong light-matter coupling regime on energy conversion, both in relaxation and upconversion schemes, by utilizing a strongly charged MoSe2 monolayer embedded in a spectrally tunable open-access cavity. We find that the charge carrier gas yields a significantly modified photoluminescence response of cavity exciton-polaritons, dominated by an intra-cavity like pump scheme. In addition, upconversion luminescence emerges from a population transfer from fermionic trions to bosonic exciton-polaritons. Due to the availability of multiple optical modes in the tunable open cavity, it seamlessly meets the cavity-enhanced double resonance condition required for an efficient upconversion. The latter can be actively tuned via the cavity length in-situ, displaying nonlinear scaling in intensity and fingerprints of the valley polarization. This suggests mechanisms that include both trion-trion Auger scattering and phonon absorption as its underlying microscopic origin.

cond-mat.mes-hall↗

Initialization of Neutral and Charged Exciton Spin States in a Telecom-Emitting Quantum Dot

Photonic cluster states are highly entangled states that allow for photonic quantum computing and memory-less quantum repeaters. Their generation has been recently demonstrated using semiconductor quantum dots emitting at the 900 nm wavelength range. However, a similar demonstration at the communication-optimal telecom range has remained elusive. A key ingredient that is still missing is an appropriate optical excitation method. A central requirement of such a method is to allow an arbitrary spin initialization of quantum dot excitonic complexes. In this work, we report on developing such a method based on a quasi-resonant p-shell excitation for a telecom-C-band-emitting quantum dot. We show qubit writing of a neutral exciton and spin-preserving excitation of a negative trion. Using the Larmor precession of the negative trion under an externally applied magnetic field, we determine the in-plane g-factors of both the electron and the hole in the investigated quantum dot. In addition, we measure a lower bound on the hole coherence time, $T_{2}^{*}>6.4$ ns, boosting its candidacy as a sound photon entangler for more advanced quantum photonic schemes.

quant-ph↗

Microscopic Modeling of Polarization Dynamics in Leaky Dielectrics: Insights into Ferroelectric-Like Behavior

Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric responses can emerge solely from the influence of transport processes that depend on energy levels, voltage polarity, and asymmetries in charge transfer rates. By combining Electrochemical Impedance Spectroscopy and voltammetry, we address critical questions related to the microscopic mechanisms in poorly conductive systems dominated by displacement currents. The impedance analysis, extended to higher-order harmonics, provides deeper insights into the dynamic behavior of dielectric materials, emphasizing the need to correlate impedance spectroscopy with dielectric spectroscopy for a thorough understanding of dipole relaxation and transport phenomena. Our approach provides a fully analytical framework that directly correlates microscopic charge dynamics with macroscopic dielectric responses, offering enhanced accuracy and predictive capability for systems dominated by displacement currents.

cond-mat.mtrl-sci↗

Quantum teleportation with dissimilar quantum dots over a hybrid quantum network

Photonic quantum information processing in metropolitan quantum networks lays the foundation for cloud quantum computing [1, 2], secure communication [3, 4], and the realization of a global quantum internet [5, 6]. This paradigm shift requires on-demand and high-rate generation of flying qubits and their quantum state teleportation over long distances [7]. Despite the last decade has witnessed an impressive progress in the performances of deterministic photon sources [8-11], the exploitation of distinct quantum emitters to implement all-photonic quantum teleportation among distant parties has remained elusive. Here, we overcome this challenge by using dissimilar quantum dots whose electronic and optical properties are engineered by light-matter interaction [12], multi-axial strain [13] and magnetic fields [14] so as to make them suitable for the teleportation of polarization qubits. This is demonstrated in a hybrid quantum network harnessing both fiber connections and 270 m free-space optical link connecting two buildings of the University campus in the center of Rome. The protocol exploits GPS-assisted synchronization, ultra-fast single photon detectors as well as stabilization systems that compensate for atmospheric turbulence. The achieved teleportation state fidelity reaches up to 82+-1%, above the classical limit by more than 10 standard deviations. Our field demonstration of all-photonic quantum teleportation opens a new route to implement solid-state based quantum relays and builds the foundation for practical quantum networks.

quant-ph↗

Accuracy Bottlenecks in Impedance Spectroscopy due to Transient Effects

Impedance spectroscopy is vital for material characterization and assessing electrochemical device performance. It provides real-time analysis of dynamic processes such as electrode kinetics, electrons, holes or ion transport, and interfacial or defect driven phenomena. However, the technique is sensitive to experimental conditions, introducing potential variability in results. The intricate interplay of transient effects within the realm of spectral impedance analyses introduces a layer of complexity that may impede straightforward interpretations. This demands a nuanced approach for refining analytical methodologies and ensuring the fidelity of impedance characterization once the dynamic contributions of transient ingredients cannot be disentangled from the underlying steady-state characteristics. In our study, we experimentally identify that the transient effects in a memristor device are most pronounced near an optimal frequency related to intrinsic relaxation times, with these effects diminishing as the frequency varies beyond or below this range. While inherent systematic errors impose a practical limit (accuracy floor) on achievable measurement accuracy, this paper offers qualitative and quantitative insights into how specific procedures affect this limit and how to reduce it in orders of magnitude. Only by effectively addressing these errors we can push beyond this constraint.

cond-mat.mes-hall↗