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Sven Rodt

Publications and source records attributed to Sven Rodt.

At least 19 recordsLinked to original sources

Tunable g-Factors of Hybridized Orbitals in a Quantum Dot Molecule

The ability to control the $g$-factors of orbital spin states in optically active quantum dot molecules (QDMs) is a prerequisite for the high-fidelity generation of multi-photonic cluster states with higher-dimensional entanglement structure. Protocols that rely on two coupled spins require knowledge of the $g$-factor and its dependence on external control parameters. Mismatches in the $g$-factor between tunnel-coupled dots introduce unwanted dephasing of coupled spin-states, making precise characterization and voltage control essential. Here, we measure the gate voltage dependence of the electron and hole $g$-factors of negatively charged trions $X^{-}$ in a single InGaAs QDM using polarization-resolved magneto-photoluminescence spectroscopy. The electron $g$-factor exhibits a pronounced step-like change at the tunneling resonance, shifting from $g_\mathrm{e} = -0.336\pm 0.008$ to $g_\mathrm{e} = -0.389\pm 0.003$, providing a direct spectroscopic fingerprint of molecular orbital formation and a shift of the wavefunction localization from the lower to the upper dot. In contrast, the hole $g$-factor remains nearly constant at $g_\mathrm{h} \approx 0.094 \pm 0.007$, exhibiting a weak modulation near the anticrossing voltages attributed to Coulomb-mediated deformation of the wavefunction by the tunneling electron. Our results are quantitatively reproduced by an eight-band $\mathbf{k}{\cdot}\mathbf{p}$ model, establishing electric-field control of the trion $g$-factors as a practical tool for independently tuning the Zeeman splitting of individual dots and opening new pathways towards the deterministic generation of two-dimensional photonic cluster states.

cond-mat.mes-hall

Anisotropic nanoscale coherent polariton transport in CrSBr

In a combined experimental and theoretical study, we demonstrate anisotropic polariton transport on the nanoscale in the van der Waals antiferromagnet CrSBr. While effective cavity-polariton formation emerges via the self-hybridization of ultra-high oscillator strength excitons with a thin slab photonic mode, the absence of external mirrors facilitates spectroscopic investigation of these polaritons via cathodoluminescence (CL) on length scales determined by the electron wavelength. This direct access allows us to perform precise charting of the polariton landscape with nanometric resolution, and to probe polariton interference phenomena. The main finding of the work highlights that the coherent polariton transport follows the $C_{2v}$ symmetry of CrSBr, allowing exclusive transport along the crystallographic a-axis, while no coherent feature is found along the b-axis direction. Our work sets the foundation to use CL spectroscopy in cavity-polaritonics in more advanced landscapes, such as photonic crystals or optical lattices, and establishes the technique as a powerful tool to probe anisotropic expansion and relaxation phenomena on the nanoscale

cond-mat.mtrl-sci

Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics

We report on the monolithic, two-step epitaxial growth of site-controlled InGaAs quantum dots via the buried stressor method with local quantum dot density variation. As a result of high fabrication accuracy, we achieve low lateral displacements of the individual buried stressor apertures of $ 17^{+19}_{-17}$~nm from mesa centers. We provide extensive micro-photoluminescence and cathodoluminescence characterization of the site-controlled quantum dots and give theoretical calculations, explaining the effect of the stressor aperture on the quantum dot emission properties, positioning, and density. We show reproducibility of the nucleation process for apertures of the same size and achieve precisely-positioned, low- and high-density quantum dot nucleation within one active layer growth step. The results presented in this work demonstrate the significant potential of the buried stressor concept in fabricating single photonic chips, simultaneously combining single-photon sources and microlasers featuring different local densities of site-controlled quantum dots, paving the way for highly functional source modules with applications in photonic quantum technology.

cond-mat.mtrl-sci

Scalable Quantum Photonic Platform Based on Site-Controlled Quantum Dots Coupled to Circular Bragg Grating Resonators

The scalable integration of solid-state quantum emitters into photonic nanostructures remains a central challenge for quantum photonic technologies. Here, we demonstrate a robust and streamlined integration strategy that tackles the long-standing issue of deterministic fabrication on randomly positioned self-assembled quantum dots (QDs), leveraging a buried-stressor-based site-controlled InGaAs QD platform. We show that this deterministic growth approach enables precise spatial alignment with circular Bragg grating (CBG) resonators for enhanced emission, eliminating the need for complex and time-consuming deterministic lithography techniques. We fabricated a $6\times6$ SCQD-CBG array with 100\% device yield, with 35 devices falling within the radial-offset range where the simulated photon-extraction efficiency (PEE) exceeds 20\%, underscoring the spatial precision and scalability of our fabrication concept. A systematically selected subset of five devices with varying radial displacements reveals clear offset-dependent trends in extraction efficiency, spectral linewidth, and photon indistinguishability, thereby establishing quantitative bounds on spatial alignment tolerances. In the best-aligned QD-CBG device, we achieve a PEE of $(47.1\pm3.8)\%$, a linewidth of $(1.41\pm0.22)$ GHz, a radiative decay lifetime of $(0.80\pm0.02)$~ns, a single-photon purity of $(99.58\pm0.18)\%$, and a Hong-Ou-Mandel two-photon interference visibility of $(81\pm5)\%$ under quasi-resonant excitation at saturation power. We confirm our conceptual understanding of the effect of emitter-position dependent charge-noise fluctuations in terms of a quantum-optical model for the (quantum-)emission properties.

cond-mat.mes-hall

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Semiconductor quantum dots (QDs) are key building blocks for photonic quantum technologies, enabling practical sources of non-classical light. A central challenge for scalable integration is the direct epitaxial growth of high-quality emitters on industry-compatible silicon platforms. Furthermore, for long-distance fiber-based quantum communication, emission in the telecom O- or C-band is essential. Here, we demonstrate the direct growth of high-quality InGaAs/GaAs QDs emitting in the telecom O-band using a strain-reducing layer approach on silicon. Deterministic integration of individual QDs into circular Bragg grating resonators is achieved via in-situ electron-beam lithography. The resulting devices exhibit strong out-coupling enhancement, with photon extraction efficiencies up to $(40 \pm 2)\%$, in excellent agreement with numerical simulations. These results highlight the high material quality of both the epitaxial platform and the photonic nanostructure, as well as the precise lateral positioning of the emitter within 20~nm of the resonator center. At cryogenic temperature (4~K) and low excitation power ($0.027\times P_\text{sat}$), the devices show excellent single-photon purity, exceeding 99\%. Operation at elevated temperatures of 40~K and 77~K, compatible with compact Stirling cryo-coolers and liquid-nitrogen cooling, reveals robust performance, with single-photon purity maintained at $(88.4 \pm 0.6)\%$ at 77~K. These results demonstrate a practical and scalable route toward silicon-based quantum light sources and provide a promising path for cost-effective fabrication and seamless integration of quantum photonics with classical electronics, representing an important step toward large-scale, chip-based quantum information systems.

cond-mat.mes-hall

Deterministic nanofabrication of quantum dot-circular Bragg grating resonators with high process yield using in-situ electron beam lithography

The controlled integration of quantum dots (QDs) as single-photon emitters into quantum light sources is essential for the implementation of large-scale quantum networks. In this study, we employ the deterministic in-situ electron-beam lithography (iEBL) nanotechnology platform to integrate individual QDs with high accuracy and process yield into circular Bragg grating (CBG) resonators. Notably, CBG devices comprising just 3 to 4 rings exhibit photon extraction efficiencies comparable to those of structures with more rings. This facilitates faster fabrication, reduces the device footprint, and enables compatibility with electrical contacting. To demonstrate the scalability of this process, we present results of 95 optically active QD-CBG devices fabricated across two lithography sessions. These devices exhibit bright, narrow-linewidth single-photon emission with excellent optical quality. To evaluate QD placement accuracy, we apply a powerful characterization technique that combines cathodoluminescence (CL) mapping and scanning electron microscopy. Statistical analysis of these devices reveals that our iEBL approach enables high alignment accuracy and a process yield of over >90% across various CBG geometries. Our findings highlight a reliable route toward the scalable fabrication of high-performance QD-based single-photon sources for use in photonic quantum technology applications.

cond-mat.mes-hall

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However, spectral jitter, often induced by charge noise in epitaxial quantum dots, leads to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs quantum dots embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of approximately (37 +- 2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong voltage dependence of the exciton dephasing time and interference visibility on the applied bias in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge-stabilized corrected value of 97 percent at the optimum bias point follows an inverse square dependence (proportional to 1/I^2) with increasing diode current (I) in forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T2*) of approximately (6.8 +-0.5) ns, reaching nearly the Fourier limit (T2 = 2T1) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.

cond-mat.mes-hall

Resonant and Anti-resonant Exciton-Phonon Coupling in Quantum Dot Molecules

Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to a few millielectronvolts. Here, we directly measure the spectral function of orbital phonon relaxation in a QDM and benchmark our findings against microscopic kp theory. Our results reveal phonon-mediated relaxation rates exhibiting pronounced resonances and anti-resonances, with rates ranging from several ten ns$^{-1}$ to tens of $\mu$s$^{-1}$. Comparison with a kinetic model reveals the voltage (energy) dependent phonon coupling strength and fully explains the interplay between phonon-assisted relaxation and radiative recombination. These anti-resonances can be leveraged to increase the lifetime of energetically unfavorable charge configurations needed for realizing efficient spin-photon interfaces and multi-dimensional cluster states.

cond-mat.mes-hall

On-demand storage and retrieval of single photons from a semiconductor quantum dot in a room-temperature atomic vapor memory

Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of $\eta_\mathrm{int}=0.6(1)\%$. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.

quant-ph

A Fiber-pigtailed Quantum Dot Device Generating Indistinguishable Photons at GHz Clock-rates

Solid-state quantum light sources based on semiconductor quantum dots (QDs) are increasingly employed in photonic quantum information applications. Especially when moving towards real-world scenarios outside shielded lab environments, the efficient and robust coupling of nanophotonic devices to single-mode optical fibers offers substantial advantage by enabling "plug-and-play" operation. In this work we present a fiber-pigtailed cavity-enhanced source of flying qubits emitting single indistinguishable photons at clock-rates exceeding $1\,$GHz. This is achieved by employing a fully deterministic technique for fiber-pigtailing optimized QD-devices based on hybrid circular Bragg grating (hCBG) micro-cavities. The fabricated fiber-pigtailed hCBGs feature radiative emission lifetimes of $<80\,$ps, corresponding to a Purcell factor of $\sim$9, a suppression of multi-photon emission events with $g^{(2)}(0)<1\%$, a photon-indistinguishability $>80\%$ and a measured single-photon coupling efficiency of 53$\%$ in a high numerical aperture single-mode fiber, corresponding to 1.2 Megaclicks per second at the single-photon detectors under $80\,$MHz excitation clock-rates. Furthermore, we show that high multi-photon suppression and indistinguishability prevail for excitation clock-rates exceeding $1\,$GHz. Our results show that Purcell-enhanced fiber-pigtailed quantum light sources based on hCBG cavities are a prime candidate for applications of quantum information science.

quant-ph

High Purcell-enhancement in quantum-dot hybrid circular Bragg grating cavities for GHz-clockrate generation of indistinguishable photons

We present Purcell-enhanced ($F_\mathrm{P}>25$) semiconductor InAs quantum dot decay times of $T_1<30\,$ps, enabled by deterministic hybrid circular Bragg gratings (hCBGs). We investigate the benefits of these short $T_1$ times on the two-photon indistinguishability for quasi-resonant and strictly resonant excitation, and observe visibilities $\geq96\%$ at 12.5$\,$ns time delay of consecutively emitted photons. The strongly Purcell-enhanced decay times enable a high degree of indistinguishability for elevated temperatures of up to 30$\,$K, and moreover, allow for excitation of up to 1.28$\,$GHz repetition rate. Our work highlights the prospects of high Purcell-enhanced solid-state quantum emitters for applications in quantum information and technologies operating at GHz clock-rates.

quant-ph

Bright electrically contacted circular Bragg grating resonators with deterministically integrated quantum dots

Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks.

cond-mat.mes-hall

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve separation in emission energy by about 150 meV of positioned and non-positioned quantum dots and a local increase of the emitter density in a single layer. Furthermore, we achieve a threefold increase of the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is particularly valuable for using the SCQDs in microlaser applications. Moreover, we obtain direct control over emission properties by adjusting the growth and fabrication parameters. Our optimization of site-controlled growth of quantum dots enables the development of photonic devices with enhanced light-matter interaction and microlasers with increased confinement factor and spontaneous emission coupling efficiency.

cond-mat.mes-hall

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. However, large propagation losses of surface plasmons on the high-index GaAs substrate prevent their direct combination. Here, we show by experiment and simulation that the best overall performance of the quantum plasmonic nanocircuit based on these building blocks is achieved in the intermediate field regime with an additional spacer layer between the quantum dot and the plasmonic waveguide. High-resolution cathodoluminescence measurements allow a precise determination of the coupling distance and support a simple analytical model to explain the overall performance. The coupling efficiency is increased up to four times by standing wave interference near the end of the waveguide.

cond-mat.mes-hall

Assessing the alignment accuracy of state-of-the-art deterministic fabrication methods for single quantum dot devices

The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with high spatial positioning accuracy. In this work, we present a comprehensive investigation of the QD position accuracy, obtained using two marker-based QD positioning techniques, photoluminescence (PL) and cathodoluminescence (CL) imaging, as well as using a marker-free in-situ electron beam lithography (in-situ EBL) technique. We employ four PL imaging configurations with three different image processing approaches and compare them with CL imaging. We fabricate circular mesa structures based on the obtained QD coordinates from both PL and CL image processing to evaluate the final positioning accuracy. This yields final position offset of the QD relative to the mesa center of $\mu_x$ = (-40$\pm$58) nm and $\mu_y$ = (-39$\pm$85) nm with PL imaging and $\mu_x$ = (-39$\pm$30) nm and $\mu_y$ = (25$\pm$77) nm with CL imaging, which are comparable to the offset $\mu_x$ = (20$\pm$40) nm and $\mu_y$ = (-14$\pm$39) nm obtained using the in-situ EBL method. We discuss the possible causes of the observed offsets, which are significantly larger than the QD localization uncertainty obtained from simply imaging the QD light emission from an unstructured wafer. Our study highlights the influences of the image processing technique and the subsequent fabrication process on the final positioning accuracy for a QD placed inside a photonic nanostructure.

physics.optics

High-$\beta$ lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

We report an easy-to-fabricate microcavity design to produce optically pumped high-$\beta$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III-V semiconductor DBRs. Through the integration of a photonic-defect, we achieve low mode volumes as low as 0.28 $\mu$m$^3$, leading to enhanced light-matter interaction, without the additional need for complex lateral nanoprocessing of micropillars. We fabricate semiconductor-dielectric hybrid microcavities, consisting of Al$_{0.9}$Ga$_{0.1}$As/GaAs bottom DBR with 33.5 mirror pairs, dielectric SiO$_{2}$/SiN$_x$ top DBR with 5, 10, 15, and 19 mirror pairs, and photonic-defects with varying lateral size in the range of 1.5 $\mu$m to 2.5 $\mu$m incorporated into a one-$\lambda/n$ GaAs cavity with InGaAs quantum dots as active medium. The cavities show distinct emission features with a characteristic photonic defect size-dependent mode separation and \emph{Q}-factors up to 17000 for 19 upper mirror pairs in excellent agreement with numeric simulations. Comprehensive investigations further reveal lasing operation with a systematic increase (decrease) of the $\beta$-factor (threshold pump power) with the number of mirror pairs in the upper dielectric DBR. Notably, due to the quasi-planar device geometry, the microlasers show high temperature stability, evidenced by the absence of temperature-induced red-shift of emission energy and linewidth broadening typically observed for nano- and microlasers at high excitation powers.

physics.optics

Applying a Riesz-projection-based contour integral eigenvalue solver to compute resonance modes of a VCSEL

We investigate the calculation of resonance modes of a VCSEL with a Riesz projection eigenvalue solver. The eigenvalue solver is based on the principle of contour integration where for the solution of scattering problems physical right sides are used. Here, it is investigated how numerical parameters impact the performance of the method, where we focus on the computation of the fundamental VCSEL mode.

physics.comp-ph

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity spectra of the cavity structure which allowed us to verify the proposed layer design and its fabrication by comparing them with the results of simulations within the transfer matrix method.

physics.app-ph