arXiv subjects

T. Guillet

Publications and source records attributed to T. Guillet.

At least 37 records · Page 2Linked to original sources

arXiv2020

Electrical detection of magnetic circular dichroism: application to magnetic microscopy in ultra-thin ferromagnetic films

Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often lead to the detection of parasitic magnetic contributions or spurious effects. In this work, we report a new magnetic microscopy technique based on the combination of magnetic circular dichroism and Seebeck effect in semiconductor/ferromagnet bilayers. We implement this method with perpendicularly magnetized (Co/Pt) multilayers sputtered on Ge (111). We further show that the electrical detection of MCD is more sensitive than the Kerr magnetometry, especially in the ultra-thin film regime, which makes it particularly promising for the study of emergent two-dimensional ferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2019

Spin-orbitronics at a topological insulator-semiconductor interface

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.

cond-mat.mes-hall↗

arXiv2019

Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)

Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, hence odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I = 10 $μ$A (or j = 0.33 A/m) and B = 1 T, it represents 0.5 % of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance. We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than $\sim$58 k$_B$. The highly developed technologies on semiconductor platforms would allow the rapid optimization of devices based on this phenomenon.

cond-mat.mtrl-sci↗

arXiv2019

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.

physics.app-ph↗

arXiv2019

Competition between horizontal and vertical polariton lasing in planar microcavities

Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing mediated by polariton stimulated scattering can occur concomitantly in both types of modes in a microcavity. By adjusting the detuning between the exciton and the radiative photon mode one can favor polariton lasing either in the radiative or in the guided modes. Our results suggest that the competition between these two types of polariton lasing modes may have played a role in many previous observations of polariton lasing and polariton Bose Einstein condensation.

cond-mat.mes-hall↗

arXiv2018

Magnetotransport in Bi$_2$Se$_3$ thin films epitaxially grown on Ge(111)

Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi$_2$Se$_3$. We first performed a thorough structural analysis of Bi$_2$Se$_3$ films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the topologically protected surface states of Bi$_2$Se$_3$. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi$_2$Se$_3$ film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi$_2$Se$_3$/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors.

cond-mat.mtrl-sci↗

arXiv2018

Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films

Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection.

cond-mat.mtrl-sci↗

arXiv2017

Spontaneous formation of vector vortex beams in vertical-cavity surface-emitting lasers with feedback

The spontaneous emergence of vector vortex beams with non-uniform polarization distribution is reported in a vertical-cavity surface-emitting laser (VCSEL) with frequency-selective feedback. Antivortices with a hyperbolic polarization structure and radially polarized vortices are demonstrated. They exist close to and partially coexist with vortices with uniform and non-uniform polarization distributions characterized by four domains of pairwise orthogonal polarization. The spontaneous formation of these nontrivial structures in a simple, nearly isotropic VCSEL system is remarkable and the vector vortices are argued to have soliton-like properties.

physics.optics↗

arXiv2016

Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells (QWs) grown on GaN template substrate. By comparing microphotoluminescence images of two identical QWs grown on sapphire and on GaN, we reveal the twofold role played by GaN substrate in the transport of excitons. First, the lower threading dislocation densities in such structures yield higher exciton radiative efficiency, thus limiting nonradiative losses of propagating excitons. Second, the absence of the dielectric mismatch between the substrate and the epilayer strongly limits the photon guiding effect in the plane of the structure,making exciton transport easier to distinguish from photon propagation. Our results pave the way towards room-temperature gate-controlled exciton transport in wide-bandgap polar heterostructures.

cond-mat.mes-hall↗

arXiv2015

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.

cond-mat.quant-gas↗

arXiv2014

Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers

A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.

cond-mat.mes-hall↗

arXiv2011

LO-phonon assisted polariton lasing in a ZnO based microcavity

Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations.

cond-mat.mtrl-sci↗

arXiv2011

Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime

In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence (μ-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to μ-PL, revealing an efficient polaritonic relaxation even at low excitation power.

cond-mat.mtrl-sci↗

arXiv2010

The effect of baryons on the variance and the skewness of the mass distribution in the universe at small scales

We study the dissipative effects of baryon physics on cosmic statistics at small scales using a cosmological simulation of a (50 Mpc/h)^3 volume of the universe. The MareNostrum simulation was performed using the AMR code RAMSES, and includes most of the physical ingredients which are part of the current theory of galaxy formation, such as metal-dependent cooling and UV heating, subgrid modelling of the ISM, star formation and supernova feedback. We re-ran the same initial conditions for a dark matter only universe, as a reference point for baryon-free cosmic statistics. In this paper, we present the measured small-scale amplification of sigma^2 and S_3 due to baryonic physics and their interpretation in the framework of the halo model. As shown in recent studies, the effect of baryons on the matter power spectrum can be accounted for at scales k <~ 10 h/Mpc by modifying the halo concentration parameter. We propose to extend this result by using a halo profile which is a linear combination of a NFW profile for the dark matter and an exponential disk profile mimicking the baryonic component at the heart of the halo. This halo profile form is physically motivated, and depends on two parameters, the mass fraction f_d of baryons in the disk, and the ratio lambda_d of the disk's characteristic scale to the halo's virial radius. We find this composite profile to reproduce both the small-scale variance and skewness boosts measured in the simulation up to k ~ 10^2 h/Mpc for physically meaningful values of the parameters f_d and lambda_d. Although simulations like the one presented here usually suffer from various problems when compared to observations, our modified halo model could be used as a fitting model to improve the determination of cosmological parameters from weak lensing convergence spectra and skewness measurements.

astro-ph.CO↗

arXiv2008

Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.

cond-mat.other↗

arXiv2008

Ferromagnetic resonance force spectroscopy of individual sub-micron size samples

We review how a magnetic resonance force microscope (MRFM) can be applied to perform ferromagnetic resonance (FMR) spectroscopy of \emph{individual} sub-micron size samples. We restrict our attention to a thorough study of the spin-wave eigen-modes excited in permalloy (Py) disks patterned out of the same 43.3 nm thin film. The disks have a diameter of either 1.0 or $0.5 μ$m and are quasi-saturated by a perpendicularly applied magnetic field. It is shown that \emph{quantitative} spectroscopic information can be extracted from the MRFM measurements. In particular, the data are extensively compared with complementary approximate models of the dynamical susceptibility: i) a 2D analytical model, which assumes an homogeneous magnetization dynamics along the thickness and ii) a full 3D micromagnetic simulation, which assumes an homogeneous magnetization dynamics below a characteristic length scale $c$ and which approximates the cylindrical sample volume by a discretized representation with regular cubic mesh of lateral size $c=3.9$ nm. In our analysis, the distortions due to a breaking of the axial symmetry are taken into account, both models incorporating the possibility of a small misalignment between the applied field and the normal of the disks.

cond-mat.mtrl-sci↗

arXiv2007

Resonant excitonic emission of a single quantum dot in the Rabi regime

We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. Resonant regime with picoseconde laser excitation is realized by embedding the quantum dots in a waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide. This is due to a \emph{slow light effect} ($c/v_{g}\simeq 3000$), occuring when an intense resonant pulse propagates in a medium. The resonant control of the quantum dot fundamental transition opens new possibilities in quantum state manipulation and quantum optics experiments in condensed matter physics.

cond-mat.mes-hall↗

arXiv2006

Spin-Exchange Interaction in ZnO-based Quantum Wells

Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined Stark effect. By using time-resolved photoluminescence we identify, for well widths under 3 nm, the redistribution of oscillator strengths between the A and B excitonic transitions, due to the enhancement of the exchange interaction. Conversely, for wider wells, the redistribution is cancelled by the dominant effect of internal electric fields, which dramatically reduce the exchange energy.

cond-mat.other↗