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T. M. Klapwijk

Publications and source records attributed to T. M. Klapwijk.

At least 73 records · Page 4Linked to original sources
arXiv2006

Correlation effects in the density of states of annealed GaMnAs

We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaMnAs. Our experiment shows that low temperature annealing is a direct empirical tool that modifies the correlation gap and thus the electron-electron interaction. Consistent with previous results on boron-doped silicon we find, as a function of voltage, a transition across the phase boundary delimiting the direct and exchange correlation regime.

cond-mat.str-el↗
arXiv2006

Thermodynamic magnetization of a strongly correlated two-dimensional electron system

We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic of the existence of a phase transition. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the inter-level interactions between quasiparticles are avoided. It turns out that, unlike in the Stoner scenario, the critical growth of the spin susceptibility originates from the dramatic enhancement of the effective mass, while the enhancement of the g-factor is weak and practically independent of the electron density.

cond-mat.str-el↗
arXiv2006

Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime

In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero-field case. Analysis of the degree of the suppression allows one to distinguish between the screening and the interaction-based theories.

cond-mat.str-el↗
arXiv2006

A spin triplet supercurrent through the half-metallic ferromagnet CrO2

In general, conventional superconductivity should not occur in a ferromagnet, though it has been seen in iron under pressure. Moreover, theory predicts that the current is always carried by pairs of electrons in a spin singlet state, so conventional superconductivity decays very rapidly when in contact with a ferromagnet, which normally prohibits the existence of singlet pairs. It has been predicted that this rapid spatial decay would not occur when spin triplet superconductivity could be induced in the ferromagnet. Here we report a Josephson supercurrent through the strong ferromagnet CrO2, from which we infer that it is a spin triplet supercurrent. Our experimental setup is different from those envisaged in the earlier predictions, but we conclude that the underlying physical explanation for our result is a conversion from spin singlet to spin triplets at the interface. The supercurrent can be switched with the direction of the magnetization, analogous to spin valve transistors, and therefore could enable magnetization-controlled Josephson junctions.

cond-mat.supr-con↗
arXiv2006

Magnetization of a strongly interacting two-dimensional electron system in perpendicular magnetic fields

We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (Lande g-factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the inter-level interactions between quasiparticles are avoided. Intra-level interactions are found to strongly modify the magnetization, without affecting the determined g* and m*.

cond-mat.str-el↗
arXiv2005

Experimental observation of bias-dependent non-local Andreev reflection

We investigate transport through hybrid structures consisting of two normal metal leads connected via tunnel barriers to one common superconducting electrode. We find clear evidence for the occurrence of non-local Andreev reflection and elastic cotunneling through superconductor when the separation of the tunnel barrier is comparable to the superconducting coherence length. The probability of the two processes is energy dependent, with elastic cotunneling dominating at low energy and non-local Andreev reflection at higher energies. The energy scale of the crossover is found to be the Thouless energy of the superconductor, which indicates the phase coherence of the processes. Our results are relevant for the realization of recently proposed entangler devices.

cond-mat.supr-con↗
arXiv2005

Transport through a superconductor-interacting normal metal junction: a phenomenological description

We propose a phenomenological description of electronic transport through a normal metal/superconductor interface of arbitrary transparency, which accounts for the presence of electron-electron interaction in the normal metal. The effect of interactions is included through an energy-dependent transmission probability that is inserted in the expression for the current-voltage characteristics of a non-interacting system. This results in a crossover from the Andreev to the tunneling limit as a function of the energy at which transport is probed. The proposed description reproduces qualitatively the results obtained with formally correct theories as well as experimental observations. In view of its simplicity, we expect our approach to be of use for the interpretation of future experiments.

cond-mat.supr-con↗
arXiv2005

Universal spin-induced Time Reversal Symmetry breaking in two-dimensional electron gases with Rashba spin-orbit interaction

We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E_Z) and the Rashba spin-orbit interaction energy (E_SOI), in InGaAs-based 2D electron gases. We find that the TRS breaking saturates when E_Z becomes comparable to E_SOI. Moreover, we show that the spin-induced TRS breaking mechanism is a universal function of the ratio E_Z/E_SOI, within the experimental accuracy.

cond-mat.mes-hall↗
arXiv2005

Critical voltage of a mesoscopic superconductor

We study the role of the quasiparticle distribution function f on the properties of a superconducting nanowire. We employ a numerical calculation based upon the Usadel equation. Going beyond linear response, we find a non-thermal distribution for f caused by an applied bias voltage. We demonstrate that the even part of f (the energy mode f_L) drives a first order transition from the superconducting state to the normal state irrespective of the current.

cond-mat.supr-con↗
arXiv2004

Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.

cond-mat.str-el↗
arXiv2004

Shashkin et al. reply to cond-mat/0410409

We show that the Comment by Reznikov and Sivan (cond-mat/0410409) is erroneous because the authors do not distinguish between Pauli and Curie spin susceptibility.

cond-mat.str-el↗
arXiv2004

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.

cond-mat.other↗
arXiv2004

Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.

cond-mat.str-el↗
arXiv2004

Competition between Spin-Orbit Interaction and Zeeman Coupling in Rashba 2DEGs

We investigate systematically how the interplay between Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases. From the quantitative analysis of the magnetoconductance, measured in the presence of an in-plane magnetic field, we conclude that this interplay results in a spin-induced breaking of time reversal symmetry and in an enhancement of the spin relaxation time. Both effects, due to a partial alignment of the electron spin along the applied magnetic field, are found to be in excellent agreement with recent theoretical predictions.

cond-mat.mes-hall↗
arXiv2004

Resistance of superconducting nanowires connected to normal metal leads

We study experimentally the low temperature resistance of superconducting nanowires connected to normal metal reservoirs. We find that a substantial fraction of the nanowires is resistive, down to the lowest temperature measured, indicative of an intrinsic boundary resistance due to the Andreev-conversion of normal current to supercurrent. The results are successfully analyzed in terms of the kinetic equations for diffusive superconductors.

cond-mat.supr-con↗
arXiv2004

Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.

cond-mat.str-el↗
arXiv2003

Magnetoconductivity of Insulating Silicon Inversion Layers

The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like densities, where a new energy scale $k_B Δ$ emerges which is not associated with either magnetic field or thermal effects. $B/T$ scaling of the magnetoconductivity breaks down at the density $n_0$ where the energy scale $k_B Δ$ vanishes, near or at the critical density $n_c$ for the apparent metal-insulator transition. The different behavior of the magnetoconductivity at low and high densities suggests the existence of two distinct phases.

cond-mat.str-el↗