arXiv subjects

T. Machida

Publications and source records attributed to T. Machida.

33 records · Page 2Linked to original sources

arXiv2013

Measurement-induced generation of spatial entanglement in a two-dimensional quantum walk with single-qubit coin

One of the proposals for the exploitation of two-dimensional quantum walks has been the efficient generation of entanglement. Unfortunately, the technological effort required for the experimental realization of standard two-dimensional quantum walks is significantly demanding. In this respect, an alternative scheme with less challenging conditions has been recently studied, particularly in terms of spatial-entanglement generation [C. Di Franco, M. Mc Gettrick, and Th. Busch, Phys. Rev. Lett. 106, 080502 (2011)]. Here, we extend the investigation to a scenario where a measurement is performed on the coin degree of freedom after the evolution, allowing a further comparison with the standard two-dimensional Grover walk.

quant-ph↗

arXiv2013

Observation of isosceles triangular electronic structure around excess iron atoms in Fe$_{1+δ}$Te

We present scanning tunneling microscopy and spectroscopy studies around an individual excess Fe atom, working as a local perturbation, in the parent material of the iron-chalcogenide superconductor Fe$_{1+δ}$Te. Spectroscopic imaging reveals a novel isosceles triangular electronic structure around the excess Fe atoms. Its spatial symmetry reects the underlying bicollinear antiferromagnetic spin state and the structural monoclinic symmetry. These findings provide important clues to understand the role of the excess Fe atoms, which complicate the understanding of the phenomena occurring in iron-chalcogenide materials.

cond-mat.str-el↗

arXiv2011

Alternate two-dimensional quantum walk with a single-qubit coin

We have recently proposed a two-dimensional quantum walk where the requirement of a higher dimensionality of the coin space is substituted with the alternance of the directions in which the walker can move [C. Di Franco, M. Mc Gettrick, and Th. Busch, Phys. Rev. Lett. {\bf 106}, 080502 (2011)]. For a particular initial state of the coin, this walk is able to perfectly reproduce the spatial probability distribution of the non-localized case of the Grover walk. Here, we present a more detailed proof of this equivalence. We also extend the analysis to other initial states, in order to provide a more complete picture of our walk. We show that this scheme outperforms the Grover walk in the generation of $x$-$y$ spatial entanglement for any initial condition, with the maximum entanglement obtained in the case of the particular aforementioned state. Finally, the equivalence is generalized to wider classes of quantum walks and a limit theorem for the alternate walk in this context is presented.

quant-ph↗

arXiv2009

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.

cond-mat.mes-hall↗

arXiv2008

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.

cond-mat.mes-hall↗

arXiv2007

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

cond-mat.mes-hall↗

arXiv2007

Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect

Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tuning electron density during the irradiation of radio-frequency magnetic fields.

cond-mat.mes-hall↗

arXiv2007

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.

cond-mat.mes-hall↗

arXiv2007

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

cond-mat.mes-hall↗

arXiv2007

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

cond-mat.mes-hall↗

arXiv2006

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hysteretic voltage-current characteristics of the quantum Hall conductor.

cond-mat.mes-hall↗

arXiv2006

Appearance of New Energy Gap and Periodic Local Density-of-States Modulation in $Bi_2 Sr_{1.6} La_{0.4} CuO_{6+δ}$

The spatial variation of the local density of states in optimally doped Bi$_{2}$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ (superconducting transition temperature is 34 K) is studied by scanning tunneling spectroscopy at 4.2 K in zero magnetic field. Two-dimensional density-of-states modulation aligned with the Cu-O-Cu bond with a periodicity of about five lattice constants is observed. It is found that this modulation accompanies the appearance of a new energy gap of approximately 10 meV, whose gap edge peak is spatially modulated in intensity. This gap coexists with the superconducting gap, the value of which ranges from 10 meV to 60 meV.

cond-mat.supr-con↗

arXiv2006

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.

cond-mat.mes-hall↗

arXiv2006

Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.

cond-mat.mes-hall↗

arXiv2006

Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.

cond-mat.mes-hall↗