arXiv subjects

T. Meunier

Publications and source records attributed to T. Meunier.

At least 19 recordsLinked to original sources

arXiv2023

RF simulation platform of qubit control using FDSOI technology for quantum computing

In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location.

quant-ph↗

arXiv2023

A new FDSOI spin qubit platform with 40nm effective control pitch

Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.

cond-mat.mes-hall↗

arXiv2022

A single hole spin with enhanced coherence in natural silicon

Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $\mu$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.

cond-mat.mes-hall↗

arXiv2020

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.

quant-ph↗

arXiv2019

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits.

cond-mat.mes-hall↗

arXiv2019

Towards scalable silicon quantum computing

We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.

cond-mat.mes-hall↗

arXiv2019

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.

cond-mat.mes-hall↗

arXiv2019

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K.

cond-mat.mes-hall↗

arXiv2017

Non-universal transmission phase behaviour of a large quantum dot

The electron wave function experiences a phase modification at coherent transmission through a quantum dot. This transmission phase undergoes a characteristic shift of $π$ when scanning through a Coulomb-blockade resonance. Between successive resonances either a transmission phase lapse of $π$ or a phase plateau is theoretically expected to occur depending on the parity of the corresponding quantum dot states. Despite considerable experimental effort, this transmission phase behaviour has remained elusive for a large quantum dot. Here we report on transmission phase measurements across such a large quantum dot hosting hundreds of electrons. Using an original electron two-path interferometer to scan the transmission phase along fourteen successive resonances, we observe both phase lapses and plateaus. Additionally, we demonstrate that quantum dot deformation alters the sequence of transmission phase lapses and plateaus via parity modifications of the involved quantum dot states. Our findings set a milestone towards a comprehensive understanding of the transmission phase of quantum dots.

cond-mat.mes-hall↗

arXiv2017

Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.

cond-mat.mes-hall↗

arXiv2017

Fast spin information transfer between distant quantum dots using individual electrons

Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels using ferromagnetic contacts or optical excitation. Parallel to this development, an important effort has been dedicated to the control of nanocircuits at the single electron level. The detection and the coherent manipulation of the spin of a single electron trapped in a quantum dot are now well established. Combined with the recent control of the displacement of individual electrons between two distant quantum dots, these achievements permit to envision the realization of spintronic protocols at the single electron level. Here, we demonstrate that spin information carried by one or two electrons can be transferred between two quantum dots separated by a distance of 4 micrometers with a classical fidelity of 65 %. We show that it is presently limited by spin flips occurring during the transfer procedure prior to and after the electron displacement. Being able to encode and control information in the spin degree of freedom of a single electron while being transferred over distances of a few microns on nanosecond timescales paves the way towards "quantum spintronics" devices where large scale spin-based quantum information processing could be implemented.

cond-mat.mes-hall↗

arXiv2017

Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics.

cond-mat.mes-hall↗

arXiv2017

Coherent long-distance displacement of individual electron spins

Controlling nanocircuits at the single electron spin level is a possible route for large-scale quantum information processing. In this context, individual electron spins have been identified as versatile quantum information carriers to interconnect different nodes of a spin-based semiconductor quantum circuit. Despite important experimental efforts to control the electron displacement over long distances, keeping the electron spin coherence after transfer remained up to now elusive. Here we demonstrate that individual electron spins can be displaced coherently over a distance of 5 micrometers. This displacement is realized on a closed path made of three tunnel-coupled lateral quantum dots. Using fast quantum dot control, the electrons tunnel from one dot to another at a speed approaching 100 m/s. We find that the spin coherence length is 8 times longer than expected from the electron spin coherence without displacement. Such an enhanced spin coherence points at a process similar to motional narrowing observed in nuclear magnetic resonance experiments6. The demonstrated coherent displacement will enable long-range interaction between distant spin-qubits and will open the route towards non-abelian and holonomic manipulation of a single electron spin.

cond-mat.mes-hall↗

arXiv2014

Transmission Phase in the Kondo Regime Revealed in a Two-Path Interferometer

We report on the direct observation of the transmission phase shift through a Kondo correlated quantum dot by employing a new type of two-path interferometer. We observed a clear $π/2$-phase shift, which persists up to the Kondo temperature $T_{\rm K}$. Above this temperature, the phase shifts by more than $π/2$ at each Coulomb peak, approaching the behavior observed for the standard Coulomb blockade regime. These observations are in remarkable agreement with 2-level numerical renormalization group calculations. The unique combination of experimental and theoretical results presented here fully elucidates the phase evolution in the Kondo regime.

cond-mat.mes-hall↗

arXiv2014

Using a two-electron spin qubit to detect electrons flying above the Fermi sea

We investigate experimentally the capacitive coupling between a two-electron spin qubit and flying electrons propagating in quantum Hall edge channels. We demonstrate that the qubit is an ultrasensitive and fast charge detector with the potential to allow single shot detection of a single flying electron. This work opens the route towards quantum electron optics at the single electron level above the Fermi sea.

cond-mat.mes-hall↗

arXiv2012

Transport through side-coupled double quantum dots: from weak to strong interdot coupling

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts electrostatically and via tunneling to the first one. As the interdot coupling increases, a crossover from weak to strong interdot tunneling is observed in the charge stability diagrams that present a complex pattern with mergings and apparent crossings of Coulomb blockade peaks. While the weak coupling regime can be understood by considering a single level on each dot, in the intermediate and strong coupling regimes, the multi-level nature of the quantum dots needs to be taken into account. Surprisingly, both in the strong and weak coupling regimes, the double quantum dot states are mainly localized on each dot for most values of the parameters. Only in an intermediate coupling regime the device presents a single dot-like molecular behavior as the molecular wavefunctions weight is evenly distributed between the quantum dots. At temperatures larger than the interdot coupling energy scale, a loss of coherence of the molecular states is observed.

cond-mat.mes-hall↗

arXiv2011

Efficient C-Phase gate for single-spin qubits in quantum dots

Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of magnetic field or g-factor gradients in coupled quantum dot systems allows for a one-step, robust realization of the controlled phase (C-Phase) gate instead. We analyze the C-Phase gate durations and fidelities that can be obtained under realistic conditions, including the effects of charge and nuclear field fluctuations, and find gate error probabilities of below 10-4, possibly allowing fault-tolerant quantum computation.

cond-mat.mes-hall↗

arXiv2010

Coupling molecular spin states by photon-assisted tunneling

Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here we report that microwaves can also excite tunneling transitions between states with different spin. In this work, the dominant mechanism responsible for violation of spin conservation is the spin-orbit interaction. These transitions make it possible to perform detailed microwave spectroscopy of the molecular spin states of an artificial hydrogen molecule and open up the possibility of realizing full quantum control of a two spin system via microwave excitation.

quant-ph↗