Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin; B. Bertrand; E. Chanrion; H. Bohuslavskyi; F. Ansaloni; T. -Y. Yang; J. Michniewicz; D. J. Niegemann; C. Spence; T. Lundberg; A. Chatterjee; A. Crippa; J. Li; R. Maurand; X. Jehl; M. Sanquer; M. F. Gonzalez-Zalba; F. Kuemmeth; Y. -M. Niquet; S. De Franceschi; M. Urdampilleta; T. Meunier; M. Vinet

arXiv · 1912.10884

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

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Abstract

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits.

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L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet. 2019-12-20. Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. https://arxiv.org/abs/1912.10884

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