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arXiv · 1912.09806

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

L. Hutin·L. Bourdet·B. Bertrand·A. Corna·H. Bohuslavskyi·A. Amisse·A. Crippa·R. Maurand·S. Barraud·M. Urdampilleta·C. Bäuerle·T. Meunier·M. Sanquer·X. Jehl·S. De Franceschi·Y. -M. Niquet·M. Vinet
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Abstract

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.

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L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet. 2019-12-20. All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology. https://doi.org/10.1109/vlsit.2018.8510665

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