Searcharxiv⌕ Search

arXiv subjects

Thomas Mikolajick

Publications and source records attributed to Thomas Mikolajick.

29 records · Page 2Linked to original sources

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.

cond-mat.mtrl-sci↗

On the Performance of Dual-Gate Reconfigurable Nanowire Transistors

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.

physics.app-ph↗

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.

physics.app-ph↗

Ferroelectric Negative Capacitance Domain Dynamics

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

cond-mat.mes-hall↗

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$

Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning transmission electron microscopy to investigate the atomic structure of boundaries in these materials. In particular, we find orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries formed throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion.

cond-mat.mtrl-sci↗

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multilevel operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device-level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined.

cond-mat.mtrl-sci↗

The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO$_2$

Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO$_2$ thin films. In this work it is explored for the example of Sr in a comprehensive first-principles study. Density functional calculations reveal structure, formation energy and total energy of the Sr related defects in HfO$_2$. We found the charge compensated defect including an associated oxygen vacancy Sr$_\text{Hf}$V$_\text{O}$ to strongly favour the non-ferroelectric, tetragonal P4$_\text{2}$/mnc phase energetically. In contrast, the uncompensated defect without oxygen vacancy Sr$_\text{Hf}$ favours the ferroelectric, orthorhombic Pca2$_\text{1}$ phase. According to the formation energy the uncompensated defect can form easily under oxygen rich conditions in the production process. Low oxygen partial pressure existing over the lifetime promotes the loss of oxygen leading to V$_\text{O}$ and, thus, the destabilization of the ferroelectric, orthorhombic Pca2$_\text{1}$ phase accompanied by an increase of the leakage current. This study attempts to fundamentally explain the stabilization of the ferroelectric, orthorhombic Pca2$_\text{1}$ phase by doping.

cond-mat.mtrl-sci↗

Substrate effect on the resistive switching in BiFeO3 thin films

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.

cond-mat.mtrl-sci↗

Control of rectifying and resistive switching behavior in BiFeO3 thin films

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

cond-mat.mtrl-sci↗

Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.

cond-mat.mes-hall↗

Reduced leakage current in BiFeO3 thin films with rectifying contacts

BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.

cond-mat.mtrl-sci↗