arXiv subjects

Ting Yu

Publications and source records attributed to Ting Yu.

At least 145 records · Page 8Linked to original sources

arXiv2012

Implementing a topological quantum model using a cavity lattice

Kitaev model has both Abelian and non-Abelian anyonic excitations. It can act as a starting point for topological quantum computation. However, this model Hamiltonian is difficult to implement in natural condensed matter systems. Here we propose a quantum simulation scheme by constructing the Kitaev model Hamiltonian in a lattice of coupled cavities with embadded $Λ$-type three-level atoms. In this scheme, several parameters are tunable, for example, via external laser fields. Importantly, our scheme is based on currently existing technologies and it provides a feasible way of realizing the Kitaev model to explore topological excitations.

quant-ph↗

arXiv2012

Mutual Preservation of Entanglement

We study a generalized double Jaynes-Cummings (JC) model where two entangled pairs of two-level atoms interact indirectly. We focus on the case where the cavities and the entangled pairs are uncorrelated. We show that there exist initial states of the qubit system so that two entangled pairs are available at all times. In particular, the minimum entanglement in the pairs as a function of the initial state is studied. Finally, we extend our findings to a model consisting of multi-mode atom-cavity interactions. We use a non-Markovian quantum state diffusion (QSD) equation to obtain the steady-state density matrix for the qubits. We show that the multi-mode model also displays dynamical preservation of entanglement.

quant-ph↗

arXiv2012

Disorder-free sputtering method on graphene

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

cond-mat.mtrl-sci↗

arXiv2012

Study of electromagnetic enhancement for surface enhanced Raman spectroscopy of SiC graphene

The electromagnetic enhancement for surface enhanced Raman spectroscopy (SERS) of graphene is studied by inserting a layer of Al2O3 between epitaxial graphene and Au nanoparticles. Different excitation lasers are utilized to study the relationship between laser wavelength and SERS. The theoretical calculation shows that the extinction spectrum of Au nanoparticles is modulated by the presence of graphene. The experimental results of the relationship between the excitation laser wavelength and the enhancement factor fit well with the calculated results. An exponential relationship is observed between the enhancement factor and the thickness of the spacer layer.

cond-mat.mtrl-sci↗

arXiv2012

Direct Observation of Inner and Outer G' Band Double-resonance Raman Scattering in Free Standing Graphene

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a direct and strong support for the previous theoretical prediction that the coexistence of the outer and inner processes in the doubleresonance Raman scattering would cause the splitting of G' mode. Our investigation of the influence of trigonal warping effect on the spectral features of G' subbands further verified the theoretical interpretation established on the anisotropic electronic structure of graphene.

cond-mat.mtrl-sci↗

arXiv2012

Time-Local Quantum-State-Diffusion Equation for Multilevel Quantum Dynamics

An open quantum system with multiple levels coupled to a bosonic environment at zero temperature is investigated systematically using the non-Markovian quantum-state-diffusion (QSD) method [W. T. Strunz, L. Diósi, and N. Gisin, Phys. Rev. Lett. 82, 1801 (1999)]. We have established exact time-local QSD equations for a set of interesting multilevel open systems, including high-spin systems, multiple-transition atomic models, and multilevel atomic models driven by time-dependent external fields. These exact QSD equations have paved the way to evaluate the dynamics of open multilevel atomic systems in the general non-Markovian regimes without any approximation.

quant-ph↗

arXiv2012

Feshbach Projection Operator Partitioning for Quantum Open Systems: Stochastic Approach

Dynamics of a state of interest coupled to a non-Markovian environment is studied for the first time by concatenating the non-Markovian quantum state diffusion (QSD) equation and the Feshbach projection operator partitioning technique. An exact one-dimensional stochastic master equation is derived as a general tool for controlling an arbitrary component of the system. We show that the exact one-dimensional stochastic master equation can be efficiently solved beyond the widely adapted second-order master equations. The generality and applicability of this hybrid approach is justified and exemplified by several coherence control problems concerning quantum state protection against leakage and decoherence.

quant-ph↗

arXiv2012

Non-perturbative Dynamical Decoupling Control: A Spin Chain Model

This paper considers a spin chain model by numerically solving the exact model to explore the non-perturbative dynamical decoupling regime, where an important issue arises recently (J. Jing, L.-A. Wu, J. Q. You and T. Yu, arXiv:1202.5056.). Our study has revealed a few universal features of non-perturbative dynamical control irrespective of the types of environments and system-environment couplings. We have shown that, for the spin chain model, there is a threshold and a large pulse parameter region where the effective dynamical control can be implemented, in contrast to the perturbative decoupling schemes where the permissible parameters are represented by a point or converge to a very small subset in the large parameter region admitted by our non-perturbative approach. An important implication of the non-perturbative approach is its flexibility in implementing the dynamical control scheme in a experimental setup. Our findings have exhibited several interesting features of the non-perturbative regimes such as the chain-size independence, pulse strength upper-bound, noncontinuous valid parameter regions, etc. Furthermore, we find that our non-perturbative scheme is robust against randomness in model fabrication and time-dependent random noise.

quant-ph↗

arXiv2012

Differentially Private Spatial Decompositions

Differential privacy has recently emerged as the de facto standard for private data release. This makes it possible to provide strong theoretical guarantees on the privacy and utility of released data. While it is well-known how to release data based on counts and simple functions under this guarantee, it remains to provide general purpose techniques to release different kinds of data. In this paper, we focus on spatial data such as locations and more generally any data that can be indexed by a tree structure. Directly applying existing differential privacy methods to this type of data simply generates noise. Instead, we introduce a new class of "private spatial decompositions": these adapt standard spatial indexing methods such as quadtrees and kd-trees to provide a private description of the data distribution. Equipping such structures with differential privacy requires several steps to ensure that they provide meaningful privacy guarantees. Various primitives, such as choosing splitting points and describing the distribution of points within a region, must be done privately, and the guarantees of the different building blocks composed to provide an overall guarantee. Consequently, we expose the design space for private spatial decompositions, and analyze some key examples. Our experimental study demonstrates that it is possible to build such decompositions efficiently, and use them to answer a variety of queries privately with high accuracy.

cs.DB↗

arXiv2012

Fermionic Stochastic Schrödinger Equation and Master Equation: An Open System Model

This paper considers the extension of the non-Markovian stochastic approach for quantum open systems strongly coupled to a fermionic bath, to the models in which the system operators commute with the fermion bath. This technique can also be a useful tool for studying open quantum systems coupled to a spin-chain environment, which can be further transformed into an effective fermionic bath. We derive an exact stochastic Schrödinger equation (SSE), called fermionic quantum state diffusion (QSD) equation, from the first principle by using the fermionic coherent state representation. The reduced density operator for the open system can be recovered from the average of the solutions to the QSD equation over the Grassmann-type noise. By employing the exact fermionic QSD equation, we can derive the corresponding exact master equation. The power of our approach is illustrated by the applications of our stochastic approach to several models of interest including the one-qubit dissipative model, the coupled two-qubit dissipative model, the quantum Brownian motion model and the N-fermion model coupled to a fermionic bath. Different effects caused by the fermionic and bosonic baths on the dynamics of open systems are also discussed.

quant-ph↗

arXiv2011

Solving non-Markovian open quantum systems with multi-channel reservoir coupling

We extend the non-Markovian quantum state diffusion (QSD) equation to open quantum systems which exhibit multi-channel coupling to a harmonic oscillator reservoir. Open quantum systems which have multi-channel reservoir coupling are those in which canonical transformation of reservoir modes cannot reduce the number of reservoir operators appearing in the interaction Hamiltonian to one. We show that the non-Markovian QSD equation for multi-channel reservoir coupling can, in some cases, lead to an exact master equation which we derive. We then derive the exact master equation for the three-level system in a vee-type configuration which has multi-channel reservoir coupling and give the analytical solution. Finally, we examine the evolution of the three-level vee-type system with generalized Ornstein-Uhlenbeck reservoir correlations numerically.

quant-ph↗

arXiv2011

Stochastic Schrödinger Equation for a Non-Markovian Dissipative Qubit-Qutrit System

We investigate the non-Markovian quantum dynamics of a hybrid open system consisting of one qubit and one qutrit by employing a stochastic Schrödinger equation to generate diffusive quantum trajectories. We have established an exact quantum state diffusion (QSD) equation for the dissipative qubit-qutrit system coupled to a bosonic heat bath at zero temperature. As an important application, the non-Markovian QSD equation is employed to simulate the entanglement decay and generation measured by negativity. Finally, some steady state properties of the hybrid system are also discussed.

quant-ph↗

arXiv2011

Dynamics of interacting qubits coupled to a common bath: Non-Markovian quantum state diffusion approach

Non-Markovian dynamics is studied for two interacting quibts strongly coupled to a dissipative bosonic environment. For the first time, we have derived the non-Markovian quantum state diffusion (QSD) equation for the coupled two-qubit system without any approximations, and in particular, without the Markov approximation. As an application and illustration of our derived time-local QSD equation, we investigate the temporal behavior of quantum coherence dynamics. In particular, we find a strongly non-Markovian regime where entanglement generation is significantly modulated by the environmental memory. Additionally, we studied the residual entanglement in the steady state by analyzing the steady state solution of the QSD equation. Finally, we have discussed an approximate QSD equation.

quant-ph↗

arXiv2011

Hysteresis of Electronic Transport in Graphene Transistors

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection and chemically driven applications.

cond-mat.mes-hall↗

arXiv2011

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.

cond-mat.mes-hall↗

arXiv2010

Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G modes (ID/IG) is revealed and further developed as a quick method for estimation of inter-defect distance and defect density in hydrogenated graphene. At low hydrogen coverage, the chemisorbed H atoms behave like defects in sp2 C=C matrix; while for a high hydrogen coverage, the sp3 C-H bonds become coalescent clusters, resulting in confinement effect on the sp2 C domains. Electronic structure changes caused by varying hydrogen coverage are evidenced by excitation energy dependent red shift of D and 2D bands. Our results provide a useful guide for developing applications of hydrogenated graphene, as well as using Raman spectroscopy as quick metrology of the defect density in further exploring other kinds of graphene derivatives.

cond-mat.mtrl-sci↗

arXiv2010

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Large scale synthesis of single layer graphene (SLG) by chemical vapor deposition (CVD) has received a lot of attention recently. However, CVD synthesis of AB stacked bi-layer graphene (BLG) is still a challenging work. Here we report synthesis of BLG homogeneously in large area by thermal CVD. The 2D Raman band of CVD BLG splits into four components, suggesting splitting of electronic bands due to strong interlayer coupling. The splitting of electronic bands in CVD BLG is further evidenced by the study of near infrared (NIR) absorption and carrier dynamics probed by transient absorption spectroscopy. Ultraviolet photoelectron spectroscopy invesigation also indiates CVD BLG possesses different electronic structures from those of CVD SLG. The growth mechanism of BLG is found to be related to catalystic activity of copper (Cu)surface, which is determined by purity of Cu foils employed in CVD process. Our work showsthat strongly coupled or even AB stacked BLG can be grown on Cu foils in large scale, which isof particular importance for device applications based on their split electronic bands

cond-mat.mtrl-sci↗

arXiv2010

Non-Markovian Relaxation of a Three-Level System: Quantum Trajectory Approach

The non-Markovian dynamics of a three-level quantum system coupled to a bosonic environment is a difficult problem due to the lack of an exact dynamic equation such as a master equation. We present for the first time an exact quantum trajectory approach to a dissipative three-level model. We have established a convolutionless stochastic Schrödinger equation called time-local quantum state diffusion (QSD) equation without any approximations, in particular, without Markov approximation. Our exact time-local QSD equation opens a new avenue for exploring quantum dynamics for a higher dimensional quantum system coupled to a non-Markovian environment.

quant-ph↗