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V. Fadeyev

Publications and source records attributed to V. Fadeyev.

At least 19 recordsLinked to original sources

Gamma irradiation of ATLAS18 ITk strip sensors affected by static charge

Construction of the new all-silicon ITk, developed by the ATLAS collaboration to be able to track charged particles produced at the HL- LHC, started in 2021 and is expected to continue until 2028. The ITk detector will include ~18,000 highly segmented and radiation hard n+-in-p silicon strip sensors, which are being manufactured by HPK. Upon their delivery, the ATLAS ITk strip sensor collaboration performs detailed measurements of sensors to monitor quality of all fabricated pieces. QC electrical tests include IV and CV tests, full strip tests, and a measurement of the long-term stability of the sensor leakage current. While most sensors demonstrate excellent performance during QC testing, we have nevertheless observed that a number of sensors from several production batches failed the electrical tests. Accumulated data indicates a strong correlation between observed electrical test failures and high electrostatic charge measured on the sensor surface during initial reception tests. This electrostatic charge enhances the risk of "Local trapped charge" events during manufacturing, shipping, and handling procedures, resulting in failed electrical QC tests. In the presented study, we have investigated whether the TID expected in the real experiment can effectively resolve early breakdown or low interstrip isolation caused by the electrostatic charge. Selected charge-affected sensors were irradiated with gamma rays from a 60Co source for a number of TID values. The results of this study indicate that the negative effects of the electrostatic charge on the critical sensors characteristics disappear after a very small amount of an accumulated TID, which actually corresponds to one or two days in the experiment. This finding gives us confidence in mitigating the issue of electrostatic charge during the operation of the ITk strip sensors in the real experiment.

physics.ins-det

Summary of quality control (QC) of ATLAS18 production ITk strip sensors

To address the demanding operational requirements of the High-Luminosity upgrade of the Large Hadron Collider (HL-LHC), the ATLAS experiment is replacing its current Inner Detector with a new all-silicon Inner Tracker (ITk). The ITk will feature an active area of 165 m2, with its outer tracking layers populated by approximately 18,000 ATLAS18 n+-in-p silicon strip sensors. The silicon sensors, available in eight geometries tailored to two barrel and six endcap types, respectively, are designed to tolerate fluences of up to 1.6 x 10^15 neq/cm2 and ionizing doses of 66 Mrad. A comprehensive, multi-year Quality Control (QC) program is underway across multiple international institutes to evaluate these ITk strip sensors for mechanical and electrical conformity. The QC process includes IV/CV characterization, full strip tests, long-term current stability monitoring, visual inspection, and metrology tests. To manage the high throughput of about 500 sensors per month, the collaboration has implemented standardized test procedures, software packages for data monitoring and integrity checks, unified data formats, and automated analysis tools. The standardization ensures consistent pass/fail evaluation and centralized data handling that enables effective identification of trends and anomalies at all sites during the production. This contribution presents an overview of the ITk strip sensor production and QC framework, along with key findings throughout the whole production, such as charge-up of sensors, stability of the leakage currents, nonrecoverable IV breakdown, and low inter-strip isolation within wafers. It provides insights into sensor yield, quality trends, and reviews specific case studies, such as p-stop doping non-uniformity. Over 91% of the production, totaling over 590 batches, were tested and accepted. Six batches were rejected. These account for 2.8% of the total tested sensors.

physics.ins-det

Low dose gamma irradiation study of ATLAS ITk MD8 diodes

Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus designed to endure a total fluence of 1.6E15 1MeV n_eq/cm2 and a total ionizing dose (TID) of 66 Mrad in the strip detector region. A radiation-hard n^+-in-p technology is implemented in the ITk strip sensors. To achieve the required radiation hardness, extensive irradiation studies were conducted during sensor development, primarily performed up to the maximal expected total fluence and TID to ensure a full functionality of the detector at its end-of-life. These studies included irradiations of sensors with various particle types and energies, including the Co60 gamma-rays. Our previous results obtained for gamma-irradiated diodes and strip sensors indicate a linear increase of bulk current with TID, while the surface current saturates at the lowest TID levels checked (66 Mrad), preventing a determination of the exact TID for which the observed saturation occurs. This work presents the results coming from irradiations by Co60 gamma-rays to multiple low TIDs, ranging from 0.5 to 100 krad. The detailed study of total, bulk, and surface currents of diodes explores an unknown dependence of surface current on the TID, annealing, and temperature. Additionally, the effect of the p-stop implant between the bias and the guard ring of measured samples is shown. The observations are relevant for the initial operations of the new ATLAS tracker.

physics.ins-det

Irradiation Study Using QA Test Pieces of ATLAS18 ITk Strip Sensors with 80MeV Protons

The ATLAS experiment is planning a complete replacement of its inner detector(ID) with a new all-silicon inner tracker (ITk) for the ATLAS Inner Tracker Phase-2 upgrade. The ATLAS18 silicon strip sensors are designed to operate up to the integrated luminosity of 4000 fb$^{-1}$, which corresponds to the maximum fluence of $1.6 \times 10^{15} \, \text n_{\text{eq}} / \text{cm}^2$ (including safety factor). To enhance the quality assurance (QA) program to monitor the key properties of the sensors, the strip sensor community is considering to include China Spallation Neutron Source (CSNS) as a proton irradiation site and Institute of High Energy Physics (IHEP) as a QA test site. A total of 18 ATLAS18 ITk QA test pieces were irradiated with $6.0 \times 10^{14}$, $1.6 \times 10^{15}$, and $2.6 \times 10^{15} \, \text n_{\text{eq}} / \text{cm}^2$ protons at CSNS, and measured at IHEP, including IV (leakage current-voltage), CV (capacitance-voltage) and CCE (charge collection efficiency) measurements. The upgraded irradiation setup at CSNS and measurement setup at IHEP are shown in this paper. Irradiated samples were exchanged between IHEP, Ljubljana and Birmingham to cross-check CCE measurements.

physics.ins-det

Evolution of the electrical characteristics of the ATLAS18 ITk strip sensors with HL-LHC radiation exposure range

The objective of the study is to evaluate the evolution of the performance of the new ATLAS Inner-Tracker (ITk) strip sensors as a function of radiation exposure, to ensure the proper operation of the upgraded detector during the lifetime of the High-Luminosity Large Hadron Collider (HL-LHC). Full-size ATLAS ITk Barrel Short-Strip (SS) sensors with final layout design, ATLAS18SS, have been irradiated with neutrons and gammas, to confirm the results obtained with prototypes and miniature sensors during the development phase. The irradiations cover a wide range of fluences and doses that ITk will experience, going from 1e13 neq/cm2 and 0.49 Mrad, to 1.6e15 neq/cm2 and 80 Mrad. The split irradiation enables a proper combination of fluence and dose values of the HL-LHC, including a 1.5 safety factor. A complete electrical characterization of the key sensor parameters before and after irradiation is presented, studying the leakage current, bulk capacitance, single-strip and inter-strip characteristics. The results confirm the fulfilment of the ATLAS specifications throughout the whole experiment. The study of a wide range of fluences and doses also allows to obtain detailed results, such as the frequency dependence of the bulk capacitance measurements for highly irradiated sensors, or the evolution of the punch-through protection and inter-strip resistance with radiation.

physics.ins-det

An extreme thermal cycling reliability test of ATLAS ITk Strips barrel modules

At the end of Run 3 of the Large Hadron Collider (LHC), the accelerator complex will be upgraded to the High-Luminosity LHC (HL-LHC) in order to increase the total amount of data provided to its experiments. To cope with the increased rates of data, radiation, and pileup, the ATLAS detector will undergo a substantial upgrade, including a replacement of the Inner Detector with a future Inner Tracker, called the ITk. The ITk will be composed of pixel and strip sub-detectors, where the strips portion will be composed of 17,888 silicon strip detector modules. During the HL-LHC running period, the ITk will be cooled and warmed a number of times from about ${-35}^\circ$C to room temperature as part of the operational cycle, including warm-ups during yearly shutdowns. To ensure ITk Strips modules are functional after these expected temperature changes, and to ensure modules are mechanically robust, each module must undergo ten thermal cycles and pass a set of electrical and mechanical criteria before it is placed on a local support structure. This paper describes the thermal cycling Quality Control (QC) procedure, and results from the barrel pre-production phase (about 5% of the production volume). Additionally, in order to assess the headroom of the nominal QC procedure of 10 cycles and to ensure modules don't begin failing soon after, four representative ITk Strips barrel modules were thermally cycled 100 times - this study is also described.

physics.ins-det

Setups for eliminating static charge of the ATLAS18 strip sensors

Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor. During the QC testing of production ATLAS18 strip sensors, an increased number of sensors that failed the electrical tests was observed. In particular, IV measurements indicated an early breakdown, while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolation were identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, which mechanically protect these sensors in their paper envelopes. Accumulated data indicates a clear correlation between observed electrical failures and the sensor charge-up. To mitigate the above-described issues, the QC testing sites significantly modified the sensor handling procedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UV light or application of intensive flows of ionized gas. In this presentation, we will describe the setups implemented by the QC testing sites to treat silicon strip sensors affected by static charge and evaluate the effectiveness of these setups in terms of improvement of the sensor performance.

physics.ins-det

Searching for Prompt and Long-Lived Dark Photons in Electro-Produced $e^+e^-$ Pairs with the Heavy Photon Search Experiment at JLab

The Heavy Photon Search experiment (HPS) at the Thomas Jefferson National Accelerator Facility searches for electro-produced dark photons. We report results from the 2016 Engineering Run consisting of 10608/nb of data for both the prompt and displaced vertex searches. A search for a prompt resonance in the $e^+e^-$ invariant mass distribution between 39 and 179 MeV showed no evidence of dark photons above the large QED background, limiting the coupling of {\epsilon}^2 {\geq} 10^-5, in agreement with previous searches. The search for displaced vertices showed no evidence of excess signal over background in the masses between 60 and 150 MeV, but had insufficient luminosity to limit canonical heavy photon production. This is the first displaced vertex search result published by HPS. HPS has taken high-luminosity data runs in 2019 and 2021 that will explore new dark photon phase space.

hep-ex

Mapping the in-plane electric field inside irradiated diodes

A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 {\mu}m^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.

physics.ins-det

Search for a Dark Photon in Electro-Produced $e^{+}e^{-}$ Pairs with the Heavy Photon Search Experiment at JLab

The Heavy Photon Search experiment took its first data in a 2015 engineering run using a 1.056 GeV, 50 nA electron beam provided by CEBAF at the Thomas Jefferson National Accelerator Facility, searching for an electro-produced dark photon. Using 1.7 days (1170 nb$^{-1}$) of data, a search for a resonance in the $e^{+}e^{-}$ invariant mass distribution between 19 and 81 MeV/c$^2$ showed no evidence of dark photon decays above the large QED background, confirming earlier searches and demonstrating the full functionality of the experiment. Upper limits on the square of the coupling of the dark photon to the Standard Model photon are set at the level of 6$\times10^{-6}$. In addition, a search for displaced dark photon decays did not rule out any territory but resulted in a reliable analysis procedure that will probe hitherto unexplored parameter space with future, higher luminosity runs.

hep-ex

Search for a Dark Photon in Electro-Produced $e^{+}e^{-}$ Pairs with the Heavy Photon Search Experiment at JLab

The Heavy Photon Search experiment took its first data in a 2015 engineering run at the Thomas Jefferson National Accelerator Facility, searching for a prompt, electro-produced dark photon with a mass between 19 and 81 MeV/$c^2$. A search for a resonance in the $e^{+}e^{-}$ invariant mass distribution, using 1.7 days (1170 nb$^{-1}$) of data, showed no evidence of dark photon decays above the large QED background, confirming earlier searches and demonstrating the full functionality of the experiment. Upper limits on the square of the coupling of the dark photon to the Standard Model photon are set at the level of 6$\times10^{-6}$. Future runs with higher luminosity will explore new territory.

hep-ex

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

physics.ins-det

Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in the range 10-100 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particle (MIPs) from a 90Sr based \b{eta}-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -30C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. The dependence of the gain upon the irradiation fluence is consistent with the concept of acceptor removal and the gain decreases from about 80 pre-irradiation to 7 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained at a value of the constant fraction discriminator (CFD) threshold used to determine the time of arrival varying with fluence, from 10% pre-radiation to 60% at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) a reduce sensitivity of the pulse shape on the initial non-uniform charge deposition, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and found to be in agreement.

physics.ins-det

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.

physics.ins-det

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

physics.ins-det

Performance of fully instrumented detector planes of the forward calorimeter of a Linear Collider detector

Detector-plane prototypes of the very forward calorimetry of a future detector at an e+e- collider have been built and their performance was measured in an electron beam. The detector plane comprises silicon or GaAs pad sensors, dedicated front-end and ADC ASICs, and an FPGA for data concentration. Measurements of the signal-to-noise ratio and the response as a function of the position of the sensor are presented. A deconvolution method is successfully applied, and a comparison of the measured shower shape as a function of the absorber depth with a Monte-Carlo simulation is given.

physics.ins-det

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

physics.ins-det

A Calibration of NICMOS Camera 2 for Low Count-Rates

NICMOS 2 observations are crucial for constraining distances to most of the existing sample of z > 1 SNe Ia. Unlike the conventional calibration programs, these observations involve long exposure times and low count rates. Reciprocity failure is known to exist in HgCdTe devices and a correction for this effect has already been implemented for high and medium count-rates. However observations at faint count-rates rely on extrapolations. Here instead, we provide a new zeropoint calibration directly applicable to faint sources. This is obtained via inter-calibration of NIC2 F110W/F160W with WFC3 in the low count-rate regime using z ~ 1 elliptical galaxies as tertiary calibrators. These objects have relatively simple near-IR SEDs, uniform colors, and their extended nature gives superior signal-to-noise at the same count rate than would stars. The use of extended objects also allows greater tolerances on PSF profiles. We find ST magnitude zeropoints (after the installation of the NICMOS cooling system, NCS) of 25.296 +- 0.022 for F110W and 25.803 +- 0.023 for F160W, both in agreement with the calibration extrapolated from count-rates 1,000 times larger (25.262 and 25.799). Before the installation of the NCS, we find 24.843 +- 0.025 for F110W and 25.498 +- 0.021 for F160W, also in agreement with the high-count-rate calibration (24.815 and 25.470). We also check the standard bandpasses of WFC3 and NICMOS 2 using a range of stars and galaxies at different colors and find mild tension for WFC3, limiting the accuracy of the zeropoints. To avoid human bias, our cross-calibration was "blinded" in that the fitted zeropoint differences were hidden until the analysis was finalized.

astro-ph.IM