arXiv subjects

V. K. Dugaev

Publications and source records attributed to V. K. Dugaev.

86 records · Page 5Linked to original sources

arXiv2005

Berry phase of magnons in textured ferromagnets

We study the energy spectrum of magnons in a ferromagnet with topologically nontrivial magnetization profile. In the case of inhomogeneous magnetization corresponding to a metastable state of ferromagnet, the spin-wave equation of motion acquires a gauge potential leading to a Berry phase for the magnons propagating along a closed contour. The effect of magnetic anisotropy is crucial for the Berry phase: we show that the anisotropy suppresses its magnitude, which makes the Berry phase observable in some cases, similar to the Aharonov-Bohm effect for electrons. For example, it can be observed in the interference of spin waves propagating in mesoscopic rings. We discuss the effect of domain walls on the interference in ferromagnetic rings, and propose some experiments with a certain geometry of magnetization. We also show that the nonvanishing average topological field acts on the magnons like a uniform magnetic field on electrons. It leads to the quantization of the magnon spectrum in the topological field.

cond-mat.mtrl-sci↗

arXiv2005

Anomalous Hall effect in a two-dimensional electron gas with spin-orbit interaction

We discuss the mechanism of anomalous Hall effect related to the contribution of electron states below the Fermi surface (induced by the Berry phase in momentum space). Our main calculations are made within a model of two-dimensional electron gas with spin-orbit interaction of the Rashba type, taking into account the scattering from impurities. We demonstrate that such an "intrinsic" mechanism can dominate but there is a competition with the impurity-scattering mechanism, related to the contribution of states in the vicinity of Fermi surface. We also show that the contribution to the Hall conductivity from electron states close to the Fermi surface has the intrinsic properties as well.

cond-mat.mtrl-sci↗

arXiv2005

Macroscopic description of current induced switching due to spin-transfer

We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion equations for the distribution functions used in the theory of CPP-GMR, ii) the relevant boundary conditions for the longitudinal and transverse components of the spin current in the situation of quasi-interfacial absorption of the transverse components in a magnetic layer. The torque is expressed as a function of the usual parameters derived from CPP-GMR experiments and two additional parameters involved in the transverse boundary conditions. Our model is used to describe qualitatively normal and inverse switching phenomena studied in recent experiments. We also present a structure for which we predict only states of steady precession above a certain critical current. We finally discuss the limits of a small angle between magnetic moments of the ferromagnetic layers and of vanishing imaginary part of the mixing conductance.

cond-mat.mes-hall↗

arXiv2004

Magnetoresistance of a semiconducting magnetic wire with domain wall

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.

cond-mat.mtrl-sci↗

arXiv2003

Topological Hall effect and Berry phase in magnetic nanostructures

We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect (THE) does not require any spin-orbit coupling, and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows to observe unambiguously the THE and to distinguish it from other mechanisms.

cond-mat.mtrl-sci↗

arXiv2003

Reflection of electrons from a domain wall in magnetic nanojunctions

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall.

cond-mat.mtrl-sci↗

arXiv2003

Electron interaction with domain walls in antiferromagnetically coupled multilayers

For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls.

cond-mat.mtrl-sci↗

arXiv2002

A new mechanism of exchange interaction in ferromagnetic semiconductors

We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the hybridization of band states (conduction or valence) with localized impurity (donor or acceptor) states and the direct exchange interaction between localized spins and the band states. The indirect exchange coupling between two impurities occurs when the wavefunctions of the corresponding localized donor (acceptor) states overlap. This coupling is independent of the free carrier concentration and therefore may be responsible for ferromagnetic transition at low or vanishing carrier concentration.

cond-mat.mtrl-sci↗

arXiv2002

Electrons in a ferromagnetic metal with a domain wall

We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction.

cond-mat.mtrl-sci↗

arXiv2001

Weak localization in InSb thin films heavily doped with lead

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the experimental data on temperature dependence of the magnetoresistivity and sample resistance with the WL theory, the temperature dependence of the phase destroying time is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time. The second is associated with the electron-phonon interaction. The third dephasing process is characterized by independent on temperature relaxation time tau_c. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time dephasing time shows saturation in its temperature dependence. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T<1 K, and by the WL effect for T>2 K.

cond-mat.mtrl-sci↗

arXiv2001

Anomalous Hall effect and weak localization corrections in a ferromagnet

In this paper, we report results on the anomalous Hall effect. First, we summarize analytical calculations based on the Kubo formalism : explicit expressions for both skew-scattering and side-jump are derived and weak-localization corrections are discussed. Next, we present numerical calculations of the anomalous Hall resistivity based on the Dirac equation. Qualitative agreement with experiments is obtained.

cond-mat↗

arXiv2001

Weak localization in ferromagnets with spin-orbit interaction

Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit interaction is due to scattering from impurities, and (ii) the case when the spin-orbit interaction results from reduced dimensionality of the system and is of the Bychkov-Rashba type. Results of the analysis show that the localization corrections to conductivity of ferromagnetic metals lead to a negative magnetoresistance -- also in the presence of the spin-orbit scattering. Positive magnetoresistance due to weak antilocalization, typical of nonmagnetic systems, does not occur in ferromagnetic systems. In the case of two-dimensional ferromagnets, the quantum corrections depend on the magnetization orientation with respect to the plane of the system.

cond-mat.mtrl-sci↗

arXiv2001

Localization corrections to the anomalous Hall effect in a ferromagnet

We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.

cond-mat.mtrl-sci↗

arXiv2001

Ferromagnetism in magnetically doped III-V semiconductors

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism in GaAs(Mn) no matter samples are degenerated or not. Formation of ferromagnetic clusters and percolation picture of phase transition describes well all available experimental data and allows to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.

cond-mat.mtrl-sci↗