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V. Ranjan

Publications and source records attributed to V. Ranjan.

17 recordsLinked to original sources

Phonon-bottlenecked spin relaxation of Er$^{3+}$:CaWO$_4$ at milliKelvin temperatures

We study spin-lattice relaxation times of electron spins in Er$^{3+}$:CaWO$_4$ at millikelvin temperature, detected via their coupling to a low-mode volume superconducting resonator. At large magnetic field supporting strong phonon-emission rates, we observe a noticeable increase in relaxation times with increasing spin-excitations, which exhibit a unique $[\tanh (\hbar \omega_0/k_\text{B} T)]^2$ temperature dependence. These observations are typical of a phonon-bottlenecked spin relaxation, and have implications for quantum technologies that exploit rare-earth spin ensembles as coherent resources.

quant-ph

Addressing spins at the clock transitions with a frequency- and bandwidth-tunable superconducting resonator

Solid-state spin ensembles addressed via superconducting circuits are promising candidates for quantum memory applications, offering multimodal storage capability and second-long coherence times at their clock transition. Implementing practical memory schemes requires dynamic control over both the resonator frequency and bandwidth. In this letter, we report measurements of a superconducting resonator whose frequency can be tuned by passing a DC current through the high-kinetic-inductance thin film, and whose bandwidth can be tuned by parametric coupling to a low-Q buffer resonator. Using this resonator, we address an ensemble of bismuth donors at their clock transition, measuring a Hahn-echo coherence time of 450 ms. We demonstrate RF driving of the bismuth donor hyperfine transitions, as well as dynamic bandwidth control of the resonator.

quant-ph

Spin echo silencing using a current-biased frequency-tunable resonator

The ability to control microwave emission from a spin ensemble is a requirement of several quantum memory protocols. Here, we demonstrate such ability by using a resonator whose frequency can be rapidly tuned with a bias current. We store excitations in an ensemble of rare-earth-ions and suppress on-demand the echo emission (`echo silencing') by two methods: 1) detuning the resonator during the spin rephasing, and 2) subjecting spins to magnetic field gradients generated by the bias current itself. We also show that spin coherence is preserved during silencing.

cond-mat.mes-hall

Hyperfine spectroscopy in a quantum-limited spectrometer

We report measurements of electron spin echo envelope modulation (ESEEM) performed at millikelvin temperatures in a custom-built high-sensitivity spectrometer based on superconducting micro-resonators. The high quality factor and small mode volume (down to 0.2pL) of the resonator allow to probe a small number of spins, down to $5\cdot 10^2$. We measure 2-pulse ESEEM on two systems: erbium ions coupled to $^{183}$W nuclei in a natural-abundance $\text{CaWO}_4$ crystal, and bismuth donors coupled to residual $^{29}$Si nuclei in a silicon substrate that was isotopically enriched in the $^{28}$Si isotope. We also measure 3- and 5-pulse ESEEM for the bismuth donors in silicon. Quantitative agreement is obtained for both the hyperfine coupling strength of proximal nuclei, and the nuclear spin concentration.

quant-ph

Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode

Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to make spatial maps of spin coherence as a function of depth and position relative to the electrode. By measuring magnetic-field-insensitive clock transitions we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to two orders of magnitude, reaching up to 300 ms at a mean depth of only 100nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals.

quant-ph

Multimode storage of quantum microwave fields in electron spins over 100 ms

A long-lived multi-mode qubit register is an enabling technology for modular quantum computing architectures. For interfacing with superconducting qubits, such a quantum memory should be able to store incoming quantum microwave fields at the single-photon level for long periods of time, and retrieve them on-demand. Here, we demonstrate the partial absorption of a train of weak microwave fields in an ensemble of bismuth donor spins in silicon, their storage for 100 ms, and their retrieval, using a Hahn-echo-like protocol. The long storage time is obtained by biasing the bismuth donors at a clock transition. Phase coherence and quantum statistics are preserved in the storage.

quant-ph

Blocking-state influence on shot noise and conductance in quantum dots

Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the electrical current and they are correspondingly called blocking states. Using the combination of conductance and shot noise measurements, we investigate blocking states in carbon nanotube (CNT) QDs. We report negative differential conductance and super-Poissonian noise. The enhanced noise is the signature of electron bunching, which originates from random switches between the strongly and weakly conducting states of the QD. Negative differential conductance appears here when the blocking state is an excited state. In this case, at the threshold voltage where the blocking state becomes populated, the current is reduced. Using a master equation approach, we provide numerical simulations reproducing both the conductance and the shot noise pattern observed in our measurements.

cond-mat.mes-hall

Measurements of a Quantum Dot with an Impedance-Matching On-Chip LC Resonator at GHz Frequencies

We report the realization of a bonded-bridge on-chip superconducting coil and its use in impedance-matching a highly ohmic quantum dot (QD) to a $\rm{3~GHz}$ measurement setup. The coil, modeled as a lumped-element $LC$ resonator, is more compact and has a wider bandwidth than resonators based on coplanar transmission lines (e.g. $λ/4$ impedance transformers and stub tuners) at potentially better signal-to-noise ratios. In particular for measurements of radiation emitted by the device, such as shot noise, the 50$\times$ larger bandwidth reduces the time to acquire the spectral density. The resonance frequency, close to 3.25 GHz, is three times higher than that of the one previously reported wire-bonded coil. As a proof of principle, we fabricated an $LC$ circuit that achieves impedance-matching to a $\rm{\sim 15~kΩ}$ load and validate it with a load defined by a carbon nanotube QD of which we measure the shot noise in the Coulomb blockade regime.

quant-ph

Contact-less characterizations of encapsulated graphene p-n junctions

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.

cond-mat.mes-hall

Shot noise of a quantum dot measured with GHz stub impedance matching

The demand for a fast high-frequency read-out of high impedance devices, such as quantum dots, necessitates impedance matching. Here we use a resonant impedance matching circuit (a stub tuner) realized by on-chip superconducting transmission lines to measure the electronic shot noise of a carbon nanotube quantum dot at a frequency close to 3 GHz in an efficient way. As compared to wide-band detection without impedance matching, the signal to noise ratio can be enhanced by as much as a factor of 800 for a device with an impedance of 100 k$Ω$. The advantage of the stub resonator concept is the ease with which the response of the circuit can be predicted, designed and fabricated. We further demonstrate that all relevant matching circuit parameters can reliably be deduced from power reflectance measurements and then used to predict the power transmission function from the device through the circuit. The shot noise of the carbon nanotube quantum dot in the Coulomb blockade regime shows an oscillating suppression below the Schottky value of $2eI$, as well an enhancement in specific regions.

cond-mat.mes-hall

Clean carbon nanotubes coupled to superconducting impedance-matching circuits

Coupling carbon nanotube devices to microwave circuits offers a significant increase in bandwidth and signal-to-noise ratio. These facilitate fast non-invasive readouts important for quantum information processing, shot noise and correlation measurements. However, creation of a device that unites a low-disorder nanotube with a low-loss microwave resonator has so far remained a challenge, due to fabrication incompatibility of one with the other. Employing a mechanical transfer method, we successfully couple a nanotube to a gigahertz superconducting matching circuit and thereby retain pristine transport characteristics such as the control over formation of, and coupling strengths between, the quantum dots. Resonance response to changes in conductance and susceptance further enables quantitative parameter extraction. The achieved near matching is a step forward promising high-bandwidth noise correlation measurements on high impedance devices such as quantum dot circuits.

cond-mat.mes-hall

Probing dynamics of an electron-spin ensemble via a superconducting resonator

We study spin relaxation and diffusion in an electron-spin ensemble of nitrogen impurities in diamond at low temperature (0.25-1.2 K) and polarizing magnetic field (80-300 mT). Measurements exploit mode- and temperature-dependent coupling of hyperfine-split sub-ensembles to the resonator. Temperature-independent spin linewidth and relaxation time suggest that spin diffusion limits spin relaxation. Depolarization of one sub-ensemble by resonant pumping of another indicates fast cross-relaxation compared to spin diffusion, with implications on use of sub-ensembles as independent quantum memories.

cond-mat.mes-hall

Nonlinear interaction of spin and charge currents in graphene

We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose graphene as a model system to study these effects and predict its magnitudes in nonlocal spin valve devices. The ambipolar behavior of graphene is used to demonstrate amplification of spin accumulation in p-n junctions by applying a charge current through nonmagnetic contacts.

cond-mat.mes-hall

Non-linear spin Seebeck effect due to spin-charge interaction in graphene

The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other degrees of freedom, going beyond the prototypical electrical spin injection and detection using magnetic contacts. Such interactions have been explored recently, for example, by using spin Hall or spin thermoelectric effects. Here we present the detection of non-local spin signals using non-magnetic detectors, via an as yet unexplored non-linear interaction between spin and charge. In analogy to the Seebeck effect, where a heat current generates a charge potential, we demonstrate that a spin current in a paramagnet leads to a charge potential, if the conductivity is energy dependent. We use graphene as a model system to study this effect, as recently proposed. The physical concept demonstrated here is generally valid, opening new possibilities for spintronics.

cond-mat.mes-hall

Giant flexoelectric effect in two-dimensional boron-nitride sheets

We find, with the use of first-principles calculations, that a single-atom-thick boron-nitride (BN) sheet exhibits an unusual nonlinear electromechanical effect: it becomes macroscopically polarized when bent out-of-plane. The direction of the induced polarization is in the plane of the film and it depends non-analitically on the corrugation wave vector k. The magnitude of the polarization can reach very high values in spite of being at least quadratic in atomic displacements due to BN sheets being able to tolerate large mechanical strains. The discovered effect can find many applications, in particular, in a new type of efficient and reliable nanogenerators.

cond-mat.mtrl-sci

The Band Gap in Silicon Nanocrystallites

The gap in semiconductor nanocrystallites has been extensively studied both theoretically and experimentally over the last two decades. We have compared a recent ``state-of-the-art'' theoretical calculation with a recent ``state-of-the-art'' experimental observation of the gap in Si nanocrystallite. We find that the two are in substantial disagreement, with the disagreement being more pronounced at smaller sizes. Theoretical calculations appear to over-estimate the gap. Recognizing that the experimental observations are for a distribution of crystallite sizes, we proffer a phenomenological model to reconcile the theory with the experiment. We suggest that similar considerations must dictate comparisons between the theory and experiment vis-a-vis other properties such as radiative rate, decay constant, absorption coefficient, etc.

cond-mat

The Role of the Carrier Mass in Semiconductor Quantum Dots

In the present work we undertake a re-examination of effective mass theory (EMT) for a semiconductor quantum dot. We take into account the fact that the effective mass ($m_i$) of the carrier inside the dot of radius R is distinct from the mass ($m_o$) in the dielectric coating surrounding the dot. The electronic structure of the quantum dot is determined in crucial ways by the mass discontinuity factor $β\equiv m_i/m_o$. In this connection we propose a novel quantum scale, $σ$, which is a dimensionless parameter proportional to $β^2 V_0 R^2$, where $V_0$ represents the barrier due to dielectric coating. The scale $σ$ represents a mass modified ``strength'' of the potential. We show both by numerical calculations and asymptotic analysis that the charge density near the nanocrystallite surface, $ρ(r = R)$, can be large and scales as $1/σ$. This fact suggests a significant role for the surface in an EMT based model. We also show that the upshift in the ground state energy is weaker than quadratic, unlike traditional EMT based calculations, and chart its dependence on the proposed scale $σ$. Finally, we demonstrate that calculations based on our model compare favorably with valence band photoemission data and with more elaborate theoretical calculations.

cond-mat