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W. P. Pratt Jr.

Publications and source records attributed to W. P. Pratt Jr..

At least 19 recordsLinked to original sources

Spin-polarized triplet supercurrent in Josephson junctions with perpendicular ferromagnetic layers

Josephson junctions containing three ferromagnetic layers with non-collinear magnetizations between adjacent layers carry spin-triplet supercurrent under certain conditions. The signature of the spin-triplet supercurrent is a relatively slow decay of the maximum supercurrent as a function of the thickness of the middle ferromagnetic layer. In this work we focus on junctions where the middle magnetic layer is a [Co/Pd]$_N$ multilayer with perpendicular magnetic anisotropy (PMA), while the outer two layers have in-plane anisotropy. We compare junctions where the middle PMA layer is or is not configured as a synthetic antiferromagnet (PMA-SAF). We find that the supercurrent decays much more rapidly with increasing the number $N$ of [Co/Pd] bilayers in the PMA-SAF junctions compared to the PMA junctions. Similar behavior is observed in junctions containing [Co/Ni]$_N$ PMA multilayers. We model that behavior by assuming that each Co/Pd or Co/Ni interface acts as a partial spin filter, so that the spin-triplet supercurrent in the PMA junctions becomes more strongly spin-polarized as $N$ increases while the supercurrent in the PMA-SAF junctions is suppressed with increasing $N$. We also address a question raised in a previous work regarding how much spin-singlet supercurrent is transmitted through our nominally spin-triplet junctions. We do that by comparing spin-triplet junctions with similar junctions where the order of the magnetic layers has been shuffled. The results of this work are expected to be helpful in designing spin-triplet Josephson junctions for use in cryogenic memory.

cond-mat.supr-con

Critical Current Oscillations of Elliptical Josephson Junctions with Single-Domain Ferromagnetic Layers

Josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a phase shift of $π$ for certain ranges of ferromagnetic layer thickness. We present studies of Nb based micron-scale elliptically-shaped Josephson junctions containing ferromagnetic barriers of Ni$_{81}$Fe$_{19}$ or Ni$_{65}$Co$_{20}$Fe$_{15}$. By applying an external magnetic field, the critical current of the junctions are found to follow characteristic Fraunhofer patterns, and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extract the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and $π$. We compare the data to previous work and to models of the 0-$π$ transitions based on existing theories.

cond-mat.supr-con

Proximity-induced density-of-states oscillations in a superconductor/strong-ferromagnet system

We have measured the evolution of the tunneling density of states (DOS) in superconductor/ferromagnet (S/F) bilayers with increasing F-layer thickness, where F in our experiment is the strong ferromagnet Ni. As a function of increasing Ni thickness, we detect multiple oscillations in the DOS at the Fermi energy from differential conductance measurements. The features in the DOS associated with the proximity effect change from normal to inverted twice as the Ni thickness increases from 1 to 5 nm.

cond-mat.supr-con

Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces

Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flipping parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations.

cond-mat.mtrl-sci

A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves

To study spin flipping within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel (AP) and parallel (P) magnetic states of the two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greater than 5 nm, but rather became constant to within our measuring uncertainty. This constant looks to be due mostly to a new, small MR in thin Py layers. The constant complicates isolating the spin-diffusion length, lsf(IrMn), in bulk IrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similar results were found with FeMn.

cond-mat.mtrl-sci

Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces

From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta).

cond-mat.mtrl-sci

A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu

We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer of a symmetric Py-based, double exchange-biased spin-valve. To focus on delta(F/N), the F- and N-layers are made thin compared to their spin-diffusion lengths. We test the technique using F/N = Co/Cu. Analysing with no adjustable parameters, gives inconsistency with delta(Co/Cu) = 0, but consistency with our prior value of delta(Co/Cu) = 0.25 (+/- 0.1). Taking delta(Co/Cu) as adjustable gives delta(Co/Cu) = 0.33 (+0.03/-0.08).

cond-mat.mtrl-sci

Perpendicular-current Studies of Electron Transport Across Metal/Metal Interfaces

We review what we have learned about the scattering of electrons by the interfaces between two different metals (M1/M2) in the current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic quantity is the specific resistance, AR, the product of the area through which the CPP current flows times the CPP resistance. We describe results for both non-magnetic/non-magnetic (N1/N2) and ferromagnetic/non-magnetic (F/N) pairs. We focus especially upon cases where M1/M2 are lattice matched (i.e., have the same crystal structure and the same lattice parameters to within ~ 1%), because in these cases no-free-parameter calculations of 2AR agree surprisingly well with measured values. But we also list and briefly discuss cases where M1/M2 are not lattice matched, either having different crystal structures, or lattice parameters that differ by several percent. The published calculations of 2AR in these latter cases do not agree so well with measured values.

cond-mat.mtrl-sci

Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing

We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or equal to 4 ML thick. From our calculations, a predicted anisotropy ratio, 2AR(Ag/Al)(001)/2AR(Ag/Al)(111), of more then 4 for a perfect interface, should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy.

cond-mat.mtrl-sci

Specific Resistance of Pd/Ir Interfaces

From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations, including only spd orbitals, give for perfect interfaces, 2AR(Pd/Ir)(Perf) = 1.21 +/-0.1 fOhmm^2, and for interfaces composed of two monolayers of a random 50%-50% alloy, 2AR(Pd/Ir)(50/50) = 1.22 +/- 0.1 fOhmm^2. Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2AR(Pd/Ir)(Perf) = 1.10 +/- 0.1 fOhmm^2 and 2AR(Pd/Ir)(50-50) = 1.13 +/- 0.1 fOhmm^2, values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs

cond-mat.mtrl-sci

Spin-Diffusion Lengths in Dilute Cu(Ge) and Ag(Sn) Alloys

We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The good agreement of this lsf(Cu2%Ge) with the value lsf(Cu2%Ge) = 121 +/- 10 nm derived from an independent spin-orbit cross-section measurement for Ge in Cu, quantitatively validates the use of Valet-Fert theory for CPP-MR data analysis to layer thicknesses several times larger than had been done before. From the value of lsf(Ag4%Sn), we predict the ESR spin-orbit cross-section for Sn impurities in Ag.

cond-mat.mtrl-sci

Comparison of Measured and Calculated Specific Resistances of Pd/Pt Interfaces

We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06) fohm-m(2), which overlaps with no-free-parameter calculations: 2AR(predicted) of 0.30 (0.04) fohm-m(2) for flat, perfect interfaces, or 0.33 (0.04) fohm-m(2) for interfaces composed of 2 monolayers of a 50percent-50percent PdPt alloy. These results support three prior examples of agreement between calculations and measurements for pairs of metals having the same crystal structure and the same lattice parameter to within 1 percent. We also estimate the spin-flipping probability at Pd/Pt interfaces as 0.13 (0.08).

cond-mat.mtrl-sci

Manipulating Current-Induced Magnetization Switching

We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are explained in terms of current-dependent effective magnetic temperature.

cond-mat.mtrl-sci

Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au

We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu.

cond-mat.mtrl-sci

Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface

We show that some metals and alloys (X = Cu, Ag, FeMn, or Cu and Ag combined with each other), sputtered between ferromagnetic Co and superconducting Nb, produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR) in a carefully designed CPP-spin-valve. In contrast, other metals (Ru or Au) or combinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, in some cases even reversing its sign. We ascribe these changes to activation of magnetic scattering anisotropies at a ferromagnetic/superconducting interface, apparently by strong spin-flipping between the Co and Nb layers.

cond-mat.mtrl-sci

Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars

Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.

cond-mat.mtrl-sci

Current-Driven Switching in Magnetic Multilayer Nanopillars

We summarize our recent findings on how the current-driven magnetization switching in nanofabricated magnetic multilayers is affected by an applied magnetic field, changes of temperature, magnetic coupling between the ferromagnetic layers, variations in the multilayer structure, and the relative rotation of the layers' magnetizations. We show how these results can be interpreted with a model describing current-driven excitations as an effective current-dependent magnetic temperature.

cond-mat.mtrl-sci

Studies of dc Current-Driven Switching in Py/N/Py magnetic nanopillars

We provide new data on current-driven switching in Permalloy (Py = Ni84Fe16) based nanopillars at room temperature and 4.2K that confirm and extend previously published work. We present data for both uncoupled and antiferromagnetically coupled samples. The latter confirm prior results for Co/Cu/Co. We show that inserting sufficiently strong spin-flip-scattering into the Cu layer eliminates hysteretic current-driven switching. This result may have ramifications for understanding current-driven switching.

cond-mat.mtrl-sci