arXiv subjects

Xiaoming Zhang

Publications and source records attributed to Xiaoming Zhang.

At least 127 records · Page 7Linked to original sources

arXiv2017

Self-protected nanoscale thermometry based on spin defects in silicon carbide

Quantum sensors with solid state electron spins have attracted considerable interest due to their nanoscale spatial resolution.A critical requirement is to suppress the environment noise of the solid state spin sensor.Here we demonstrate a nanoscale thermometer based on silicon carbide (SiC) electron spins.We experimentally demonstrate that the performance of the spin sensor is robust against dephasing due to a self protected machenism. The SiC thermometry may provide a promising platform for sensing in a noisy environment ,e.g. biological system sensing.

quant-ph↗

arXiv2017

Superconducting Two-Dimensional Metal-Organic Framework

Superconductivity is a fascinating quantum phenomenon characterized by zero electrical resistance and the Meissner effect. To date, several distinct families of superconductors (SCs) have been discovered. These include three-dimensional (3D) bulk SCs in both inorganic and organic materials as well as two-dimensional (2D) thin film SCs but only in $inorganic$ materials. Here we predict superconductivity in 2D and 3D $organic$ metal-organic frameworks by using first-principles calculations. We show that the highly conductive and recently synthesized Cu-benzenehexathial (BHT) is a Bardeen-Cooper-Schrieffer SC. Remarkably, the monolayer Cu-BHT has a critical temperature ($T_{c}$) of 4.43 K while $T_{c}$ of bulk Cu-BHT is 1.58 K. Different from the enhanced $T_{c}$ in 2D inorganic SCs which is induced by interfacial effects, the $T_{c}$ enhancement in this 2D organic SC is revealed to be the out-of-plane soft-mode vibrations, analogous to surface mode enhancement originally proposed by $Ginzburg$. Our findings not only shed new light on better understanding 2D superconductivity, but also open a new direction to search for SCs by interface engineering with organic materials.

cond-mat.mtrl-sci↗

arXiv2017

Random number generation with cosmic photons

Random numbers are indispensable for a variety of applications ranging from testing physics foundation to information encryption. In particular, nonlocality tests provide a strong evidence to our current understanding of nature -- quantum mechanics. All the random number generators (RNG) used for the existing tests are constructed locally, making the test results vulnerable to the freedom-of-choice loophole. We report an experimental realization of RNGs based on the arrival time of cosmic photons. The measurement outcomes (raw data) pass the standard NIST statistical test suite. We present a realistic design to employ these RNGs in a Bell test experiment, which addresses the freedom-of-choice loophole.

quant-ph↗

arXiv2017

Creation of Half-metallic f -orbital Dirac Fermion with Superlight Elements in Orbital-Designed Molecular Lattice

Magnetism in solids generally originates from the localized $d$- or $f$-orbitals that are hosted by heavy transition-metal elements. Here, we demonstrate a novel mechanism for designing half-metallic $f$-orbital Dirac fermion from superlight $sp$-elements. Combining first-principles and model calculations, we show that bare and flat-band-sandwiched (FBS) Dirac bands can be created when C$_{20}$ molecules are deposited into a 2D hexagonal lattice, which are composed of $f$-molecular orbitals (MOs) derived from $sp$-atomic orbitals (AOs). Furthermore, charge doping of the FBS Dirac bands induces spontaneous spin-polarization, converting the system into a half-metallic Dirac state. Based on this discovery, a model of spin field effect transistor is proposed to generate and transport 100\% spin-polarized carriers. Our finding illustrates a novel concept to realize exotic quantum states by manipulating MOs, instead of AOs, in orbital-designed molecular crystal lattices.

cond-mat.mes-hall↗

arXiv2017

Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam

In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few tens of nanometers, defined by the diameter of the ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si++ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

quant-ph↗

arXiv2016

Dirac node lines in a two-dimensional bipartite square lattice

As a new type of quantum matter, Dirac node line (DNL) semimetals are currently attracting widespread interest in condensed matter physics and material science. The DNL featured by a closed line consisting of linear band crossings in the lattice momentum space are mostly predicted in three-dimensional materials. Here, we propose tight-binding (TB) models of pz/px,y or pz/s orbitals in a two-dimensional (2D) bipartite square lattice for the 2D version of DNL semimetals. The DNL states in these models are caused by the inversion of the bands with different symmetries and thus robust again spin-orbit coupling (SOC). By means of first-principles calculations, we demonstrate two candidate 2D materials of these models: Be2C and BeH2 monolayers, which have Fermi circles centered at Γ (0,0) and K (1/2, 1/2) points, respectively. The topological nontriviality is verified by the non-zero topological invariant and the edge states. This work opens an avenue for design of 2D DNL semimetals.

cond-mat.mtrl-sci↗

arXiv2016

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $\sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.

quant-ph↗

arXiv2016

Theoretical prediction of MoN2 monolayer as a high capacity electrode material for metal ion batteries

Benefited from the advantages on environmental benign, easy purification, and high thermal stability, the recently synthesized two-dimensional (2D) material MoN2 shows great potential for clean and renewable energy applications. Here, through first-principles calculations, we show that the monolayered MoN2 is promising to be a high capacity electrode material for metal ion batteries. Firstly, identified by phonon dispersion and exfoliation energy calculations, MoN2 monolayer is proved to be structurally stable and could be exfoliated from its bulk counterpart in experiments. Secondly, all the studied metal atoms (Li, Na and K) can be adsorbed on MoN2 monolayer, with both pristine and doped MoN2 being metallic. Thirdly, the metal atoms possess moderate/low migration barriers on MoN2, which ensures excellent cycling performance as a battery electrode. In addition, the calculated average voltages suggest that MoN2 monolayer is suitable to be a cathode for Li-ion battery and anodes for Na-ion and K-ion batteries. Most importantly, as a cathode for Li-ion battery, MoN2 possesses a comparable average voltage but a 1-2 times larger capacity (432 mA h g-1) than usual commercial cathode materials; as an anode for Na-ion battery, the theoretical capacity (864 mA h g-1) of MoN2 is 2-5 times larger than typical 2D anode materials such as MoS2 and most MXenes. Finally we also provide an estimation of capacities for other transition-metal dinitrides materials. Our work suggests that the transition-metal dinitrides MoN2 is an appealing 2D electrode materials with high storage capacities.

cond-mat.mtrl-sci↗

arXiv2016

Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries

Two-dimensional (2D) materials as electrodes is believed to be the trend for future Li-ion and Na-ion batteries technologies. Here, by using first-principles methods, we predict that the recently reported borophene (2D born sheet) can serve as an ideal electrode material with high electrochemical performance for both Li-ion and Na-ion batteries. The calculations are performed on the two experimentally stable borophene structures, namely \b{eta}12 and \c{hi}3 structures. The optimized Li and Na adsorption sites are identified, and the host materials are found to maintain good electric conductivity before and after adsorption. Besides advantages including small diffusion barriers and low average open-circuit voltages, most remarkably, the storage capacity can be as high as 1984 mA h g-1 in \b{eta}12 borophene and 1240 mA h g-1 in \c{hi}3 borophene for both Li and Na, which is several times higher than the commercial graphite electrode and is the highest among all the 2D materials discovered to date. Our results highly support that borophenes can be appealing anode materials for both Li-ion and Na-ion batteries with extremely high power density.

cond-mat.mes-hall↗

arXiv2016

The Xinglong 2.16-m Telescope: Current Instruments and Scientific Projects

The Xinglong 2.16-m reflector is the first 2-meter class astronomical telescope in China. It was jointly designed and built by the Nanjing Astronomical Instruments Factory (NAIF), Beijing Astronomical Observatory (now National Astronomical Observatories, Chinese Academy of Sciences, NAOC) and Institute of Automation, Chinese Academy of Sciences in 1989. It is Ritchey-Chrétien (R-C) reflector on an English equatorial mount and the effective aperture is 2.16 meters. It had been the largest optical telescope in China for $\sim18$ years until the Guoshoujing Telescope (also called Large Sky Area Multi-Object Fiber Spectroscopic Telescope, LAMOST) and the Lijiang 2.4-m telescope were built. At present, there are three main instruments on the Cassegrain focus available: the Beijing Faint Object Spectrograph and Camera (BFOSC) for direct imaging and low resolution ($R\sim500-2000$) spectroscopy, the spectrograph made by Optomechanics Research Inc. (OMR) for low resolution spectroscopy (the spectral resolutions are similar to those of BFOSC) and the fiber-fed High Resolution Spectrograph (HRS, $R\sim30000-65000$). The telescope is widely open to astronomers all over China as well as international astronomical observers. Each year there are more than 40 ongoing observing projects, including 6-8 key projects. Recently, some new techniques and instruments (e.g., astro-frequency comb calibration system, polarimeter and adaptive optics) have been or will be tested on the telescope to extend its observing abilities.

astro-ph.IM↗

arXiv2016

A centrosymmetric hexagonal magnet with superstable biskyrmion magnetic nanodomains in a wide temperature range of 100K to 340K

Here, we report on the experimental discovery of biskyrmion magnetic nanodomains at RT and the observation of a biskyrmion-derived topological Hall effect (THE) in the centrosymmetric hexagonal MnNiGa magnet. Using a phase reconstruction technique based on a transport-of-intensity equation (TIE), we established the texture of the biskyrmion spin. Results from Lorentz transmission electron microscopy (TEM) and the topological Hall effect revealed that the biskyrmion phase is stable over a much wider temperature range (100 K to ~340K) and a larger magnetic field range in our material than in skyrmion-hosting bulk crystals reported previously[1-3,6]. The super-wide operating temperature and the broad range of material options indicate important progress toward the realization of skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2016

NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds

Spin-orbit coupling (SOC) is expected to partly determine the topologically nontrivial electronic structure of heavy half-Heusler ternary compounds. However, to date, attempts to experimentally observe either the strength of SOC or how it modifies the bulk band structure have been unsuccessful. By using bulk-sensitive nuclear magnetic resonance (NMR) spectroscopy combined with first-principles calculations, we reveal that 209Bi NMR isotropic shifts scale with relativity in terms of the strength of SOC and average atomic numbers, indicating strong relativistic effects on NMR parameters. According to first-principles calculations, we further claim that nuclear magnetic shieldings from relativistic p1/2 states and paramagnetic contributions from low-lying unoccupied p3/2 states are both sensitive to the details of band structures tuned by relativity, which explains why the hidden relativistic effects on band structure can be revealed by 209Bi NMR isotropic shifts in topologically nontrivial half-Heusler compounds. Used in complement to surface-sensitive methods, such as angle resolved photon electron spectroscopy and scanning tunneling spectroscopy, NMR can provide valuable information on bulk electronic states.

cond-mat.str-el↗

arXiv2016

Sub-jet structure as a discriminating quenching probe

In this work, we propose a new class of jet substructure observables which, unlike fragmentation functions, are largely insensitive to the poorly known physics of hadronization. We show that sub-jet structures provide us with a large discriminating power between different jet quenching Monte Carlo implementations.

hep-ph↗

arXiv2015

Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be achieved by modulating the nanopores under tensile strain. The water permeability can be improved by two orders of magnitude compared to RO membranes, which offers a promising approach to the global water shortage solution.

physics.bio-ph↗

arXiv2015

Prediction of Novel Stable 2D-Silicon with Fivefold Coordination

Silicene, an analogue of graphene, was so far predicted to be the only two-dimensional silicon (2D-Si) with massless Dirac fermions. Here we predict a brand new 2D-Si Dirac semimetal, which we name siliconeet [silik'ni:t]. Unexpectedly, it has a much lower energy than silicene and robust direction-dependent Dirac cones with Fermi velocities comparable to those in graphene. Remarkably, its peculiar structure based on pentagonal rings and fivefold coordination plays a critical role in the novel electronic properties. Taking spin-orbit coupling into account, siliconeet can also be recognized as a 2D-topological insulator with a larger nontrivial band gap than silicene.

cond-mat.mtrl-sci↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Beam optical design for high energy electron radiography experiment study based on THU LINAC

A special beam line for high energy electron radiography is designed, including achromat and imaging systems. The requirement of the angle and position correction on the target from imaging system can be approximately realized by fine tuning the quadrupoles used in the achromat. The imaging system is designed by fully considering the limitation from the laboratory and beam diagnostics devices space. Two kinds of imaging system are designed and both show a good performance of imaging by beam trajectory simulation. The details of the beam optical requirement and optimization design are presented here. The beam line is designed and prepared to install in Tsinghua university linear electron accelerator laboratory for further precise electron radiography experiment study.

physics.acc-ph↗

arXiv2015

Tunable Topological States in Electron-Doped HTT-Pt

Driving existing materials to exhibit topologically nontrivial state is of both scientific and technological interests. Using first-principle calculations, we propose the first demonstration of electron doping induced multiple quantum phase transition in a single material of the organometallic framework, HTT-Pt, which has been synthesized by reacting triphenylene hexathiol molecules (HTT) with PtCl2. At low elec-tron doping, the HTT-Pt converts from a normal insulator to a quantum spin Hall (QSH) insulator with time-reversal symmetry (TRS). At high electron doping, the TRS is further broken making the HTT-Pt a quantum anomalous Hall (QAH) insulator. The topologically nontrivial band gap of the electron-doped HTT-Pt opened by intrinsic spin-orbit coupling (SOC) can be as large as 44.5 meV, which is promising for realizing these quantum phases at high temperatures. The possibility of switching between the QSH and QAH states offers an intriguing platform for new device paradigm by interfacing between a QSH and QAH state.

cond-mat.mtrl-sci↗