arXiv subjects

Xuan P. A. Gao

Publications and source records attributed to Xuan P. A. Gao.

31 records · Page 2Linked to original sources

arXiv2013

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-doping level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

cond-mat.mes-hall↗

arXiv2012

Strong tuning of Rashba spin orbit interaction in single InAs nanowires

A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables six-fold tuning of Rashba coefficient and nearly three orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in nanowires may have implications in nanowire based spintronic devices.

cond-mat.mes-hall↗

arXiv2011

Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases.

cond-mat.str-el↗

arXiv2011

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.

cond-mat.mes-hall↗

arXiv2011

Degenerate versus semi-degenerate transport in a correlated 2D hole system

It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T< T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture.

cond-mat.str-el↗

arXiv2010

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.

cond-mat.mes-hall↗

arXiv2009

Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization

The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both the perpendicular and the parallel magnetic fields induce a positive magneto-conductance. Yet the parallel magnetic field induced longitudinal magneto-conductance has a smaller magnitude. This anisotropic magneto-transport phenomenon is studied as a function of temperature, magnetic field strength and at an arbitrary angle between the magnetic field and the nanowire. We show that the observed effect is in quantitative agreement with the suppression of one-dimensional (1D) weak localization.

cond-mat.mes-hall↗

arXiv2009

One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are consistent with the functional forms predicted in one-dimensional (1D) weak localization theory. By fitting the magneto-conductance data to theory, the phase coherence length of electrons is determined to be tens of nanometers with a T-1/3 dependence. Moreover, as the electron density is increased by a gate voltage, the magneto-conductance shows a possible signature of suppression of weak localization in multiple 1D subbands.

cond-mat.mes-hall↗

arXiv2004

Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime

We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $ρ_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall coefficient, $R_H$, is found to be enhanced when $T$ decreases. Strong magnetic fields further enhance the slope of $ρ_{xy}(B)$ at all temperatures studied. Coulomb interaction corrections of a Fermi liquid(FL) in the ballistic regime can not explain the enhancement of $ρ_{xy}$ which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, {\it not enhance} the slope of $ρ_{xy}(B)$ as $T$ decreases and/or $B$ increases.

cond-mat.str-el↗

arXiv2003

Fermi liquid behavior of metallic 2D holes at high temperatures

The resistivity $ρ$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$ρ$/d$T<$0, we observe for the first time both the $ν=1$ quantum Hall(QH) effect and a low field insulator-QH transition which is consistent with the 2D hole system being a Fermi liquid(FL). The known linear $T$-dependent conductivity in this $T$ regime then can be explained by hole-hole Coulomb interactions of this FL. The fact that the system is metallic (d$ρ$/d$T>$0) for $T<T^*$ implies that the high temperature FL transforms into the 2D metallic state in the neighborhood of $T^*$.

cond-mat.str-el↗

arXiv2002

Joule heating of dilute 2D holes in a GaAs quantum well

We present measurements of the Joule heating of a 2D hole gas (2DHG) formed in a 30nm GaAs quantum well. The hole density is in the range (4.6-18.9)*10^9cm^-2 and exhibits an apparent metal-to-insulator transition (MIT) with a critical density 6*10^9 cm^-2. In the limit of zero heating power density P, the GaAs lattice is within 2 mK of the 6 mK base temperature of our dilution refrigerator determined by He-3 melting curve thermometry. Throughout the range of heating power densities used (1 to 10^6 fW/cm^2), the temperature rise of the lattice is estimated to be negligible compared to the temperature rise of the hole gas. We argue that the hole scattering rate is only a function of the hole temperature, with little dependence on the lattice or impurity temperatures in the relevant temperature range below 150 mK. We have therefore made measurements of the hole resistivity at negligible heating power density (P<5fW/cm^2) as a function of measured lattice temperature in the range 6 to 150 mK. We then use the hole resistivity measured in a cold lattice to estimate the temperature of the 2D hole gas as a function of P. In the low hole density insulating phase, the heating power density P(T) that heats the hole gas to a temperature T exhibits a dependence P ~ T^2 for T<30mK, gradually changing to P ~ T^4 for higher temperatures. On the metallic side of the MIT, P is proportional to T^5 or T^6 with a magnitude roughly 4 times less than the power density required to heat the insulating phase to the same temperature. Our measurements are within a factor of two of the available quantitative theoretical predictions for the hole energy loss rate as a function of temperature.

cond-mat.str-el↗

arXiv2001

The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field 'metal-insulator transition' (MIT). In a parallel field well above B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase having a percolation threshold close to B_c.

cond-mat.str-el↗

arXiv2001

Two-dimensional metal in a parallel magnetic field

We have investigated the effect of an in plane parallel magnetic field (B_||) on two high mobility metallic-like dilute two-dimensional hole gas (2DHG) systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the low temperature resistance drop, B_|| does not affect E_a, the characteristic energy scale of the metallic resistance drop. The field B_c at which the metallic-like resistance drop vanishes is dependent on both the width of quantum well and the orientation of B_||. It is unexpected that E_a is unaffected by B_|| up to Bc depite that the Zeeman energy at B_c is roughly equal to E_a.

cond-mat.str-el↗