arXiv subjects

Y. Ando

Publications and source records attributed to Y. Ando.

At least 37 records · Page 2Linked to original sources

arXiv2016

Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research.

cond-mat.mtrl-sci↗

arXiv2016

Quantification of a propagating spin-wave-packet created by an ultrashort laser pulse in a thin film of magnetic metal

Coherent spin-wave generation by focused ultrashort laser pulse irradiation was investigated for a permalloy thin film at micrometer scale using an all-optical space and time-resolved magneto-optical Kerr effect. The spin-wave packet propagating perpendicular to magnetization direction was clearly observed, however that propagating parallel to the magnetization direction was not observed. The propagation length, group velocity, center frequency, and packet-width of the observed spin-wave packet were evaluated and quantitatively explained in terms of the propagation of a magneto-static spin-wave driven by ultrafast change of an out-of-plane demagnetization field induced by the focused-pulse laser.

cond-mat.mes-hall↗

arXiv2015

Spin-Rotation Symmetry Breaking in the Superconducting State of CuxBi2Se3

Spontaneous symmetry breaking is an important concept for understanding physics ranging from the elementary particles to states of matter. For example, the superconducting state breaks global gauge symmetry, and unconventional superconductors can break additional symmetries. In particular, spin rotational symmetry is expected to be broken in spin-triplet superconductors. However, experimental evidence for such symmetry breaking has not been conclusively obtained so far in any candidate compounds. Here, by 77Se nuclear magnetic resonance measurements, we show that spin rotation symmetry is spontaneously broken in the hexagonal plane of the electron-doped topological insulator Cu0.3Bi2Se3 below the superconducting transition temperature Tc=3.4 K. Our results not only establish spin-triplet superconductivity in this compound, but may also serve to lay a foundation for the research of topological superconductivity.

cond-mat.supr-con↗

arXiv2015

Precise determination of two-carrier transport properties in the topological insulator TlBiSe$_2$

We report the electric transport study of the three-dimensional topological insulator TlBiSe$_2$. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda $et~al.$, Phys. Rev. Lett. $\bm{105}$, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{ü}neisen formula and yielded the Debye temperature $\varTheta_{\rm{D}}=113 \pm 14$~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

cond-mat.mtrl-sci↗

arXiv2014

On infrared pseudogap in cuprate and pnictide high-temperature superconductors

We investigate infrared manifestations of the pseudogap in the prototypical cuprate and pnictide superconductors: YBa2Cu3Oy and BaFe2As2 (Ba122) systems. We find remarkable similarities between the spectroscopic features attributable to the pseudogap in these two classes of superconductors. The hallmarks of the pseudogap state in both systems include a weak absorption feature at about 500 cm-1 followed by a featureless continuum between 500 and 1500 cm-1 in the conductivity data and a significant suppression in the scattering rate below 700 - 900 cm-1. The latter result allows us to identify the energy scale associated with the pseudogap $Δ_{PG}$. We find that in the Ba122-based materials the superconductivity-induced changes of the infrared spectra occur in the frequency region below 100 - 200 cm-1, which is much lower than the energy scale of the pseudogap. We performed theoretical analysis of the scattering rate data of the two compounds using the same model which accounts for the effects of the pseudogap and electron-boson coupling. We find that the scattering rate suppression in Ba122-based compounds below $Δ_{PG}$ is solely due to the pseudogap formation whereas the impact of the electron-boson coupling effects is limited to lower frequencies. The magnetic resonance modes used as inputs in our modeling are found to evolve with the development of the pseudogap, suggesting an intimate correlation between the pseudogap and magnetism.

cond-mat.supr-con↗

arXiv2013

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

cond-mat.mtrl-sci↗

arXiv2013

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipation-free information propagation. Whereas electrical generation of spin currents originally made the field of spincurrentronics possible, and significant advances in spin-current devices has been made, novel spin-current-generation approaches such as dynamical methods have also been vigorously investigated. However, the low spin-current generation efficiency associated with dynamical methods has impeded further progress towards practical spin devices. Here we show that by introducing a Heusler-type ferromagnetic material, Fe3Si, pure spin currents can be generated about twenty times more efficiently using a dynamical method. This achievement paves the way to the development of novel spin-based devices.

cond-mat.mtrl-sci↗

arXiv2012

Nonlinear emission of spin-wave caustics from an edge mode of a micro-structured Co2Mn0.6Fe0.4Si waveguide

Magnetic Heusler materials with very low Gilbert damping are expected to show novel magnonic transport phenomena. We report nonlinear generation of higher harmonics leading to the emission of caustic spin-wave beams in a low-damping, micro-structured Co2Mn0.6Fe0.4Si Heusler waveguide. The source for the higher harmonic generation is a localized edge mode formed by the strongly inhomogeneous field distribution at the edges of the spin-wave waveguide. The radiation characteristics of the propagating caustic waves observed at twice and three times the excitation frequency are described by an analytical calculation based on the anisotropic dispersion of spin waves in a magnetic thin film.

cond-mat.mes-hall↗

arXiv2012

Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.

cond-mat.mtrl-sci↗

arXiv2012

Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces

We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.

cond-mat.mtrl-sci↗

arXiv2012

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

cond-mat.mes-hall↗

arXiv2011

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

cond-mat.mtrl-sci↗

arXiv2011

Electric-field control of spin accumulation signals in silicon at room temperature

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.

cond-mat.mes-hall↗

arXiv2011

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

cond-mat.mtrl-sci↗

arXiv2010

Doping dependence of the $(π,π)$ shadow band in La-based cuprates studied by angle-resolved photoemission spectroscopy

The $(π,π)$ shadow band (SB) in La-based cuprate family (La214) was studied by angle-resolved photoemission spectroscopy (ARPES) over a wide doping range from $x=0.01$ to $x=0.25$. Unlike the well-studied case of the Bi-based cuprate family, an overall strong, monotonic doping dependence of the SB intensity at the Fermi level ($E_F$) was observed. In contrast to a previous report for the presence of the SB only close to $x=1/8$, we found it exists in a wide doping range, associated with a doping-independent $(π,π)$ wave vector but strongly doping-dependent intensity: It is the strongest at $x\sim 0.03$ and systematically diminishes as the doping increases until it becomes negligible in the overdoped regime. This SB with the observed doping dependence of intensity can in principle be caused by the antiferromagnetic fluctuations or a particular form of low-temperature orthorhombic lattice distortion known to persist up to $x\sim 0.21$ in the system, with both being weakened with increasing doping. However, a detailed binding energy dependent analysis of the SB at $x=0.07$ does not appear to support the former interpretation, leaving the latter as a more plausible candidate, despite a challenge in quantitatively linking the doping dependences of the SB intensity and the magnitude of the lattice distortion. Our finding highlights the necessity of a careful and global consideration of the inherent structural complications for correctly understanding the cuprate Fermiology and its microscopic implication.

cond-mat.supr-con↗

arXiv2010

Unravelling the glue and the competing order in superconducting cuprates

We present Raman scattering experiments in ${\rm La_{2-x}Sr_xCuO_4}$ single crystals at various doping levels x and compare the results with theoretical predictions obtained assuming an interaction mediated by spin and charge fluctuations. The light-scattering selection rules allow us to disentangle their respective contributions. We find that the glue spectral function is spin-dominated at low doping while the contribution of charge fluctuations becomes dominant around optimal doping. This indicates that the fluctuations of a nearly ordered state with coexisting spin and charge order support the superconducting pairing.

cond-mat.supr-con↗

arXiv2010

Polarization-analyzed resonant inelastic x-ray scattering of the orbital excitations in KCuF3

We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of orbital excitations in KCuF3 . By performing the polarization analysis of the scattered photons, we disclose that the excitation between the eg orbitals and the excitations from t2g to eg exhibit distinct polarization dependence. The polarization dependence of the respective excitations is interpreted based on a phenomenological consideration of the symmetry of the RIXS process that yields a necessary condition for observing the excitations. In addition, we show that the orbital excitations are dispersionless within our experimental resolution.

cond-mat.str-el↗

arXiv2010

Characteristic electronic structure and its doping evolution in lightly-doped to underdoped YBa2Cu3Oy

We have performed an angle resolved photoemission spectroscopy (ARPES) study of lightly-doped to underdoped YBa2Cu3Oy (YBCO) untwinned single crystals and a core-level x-ray photoemission spectroscopy (XPS) study of YBCO single and polycrystals. In the zone diagonal (nodal) direction, dispersive quasi-particle (QP) features crossing the Fermi level were observed down to the hole concentration of ~ 4%, which explains the metallic transport of the lightly-doped YBCO. The chemical potential shift estimated from XPS was more rapid than in the Bi2212 cuprates. Upon hole doping, very rapid spectral weight transfer from high binding energies to the QP feature, even faster than La2-xSrxCuO4, was observed.

cond-mat.supr-con↗