arXiv subjects

Yanwen Liu

Publications and source records attributed to Yanwen Liu.

At least 19 recordsLinked to original sources

arXiv2026

Time performance of USTC-IME LGAD under synchrotron light source focused X-ray

The time performance of Low Gain Avalanche Diodes (LGADs), designed by the University of Science and Technology of China (USTC) and fabricated by the Institute of Microelectronics of Chinese Academy of Sciences (IME), was characterized at the Shanghai Synchrotron Radiation Facility (SSRF). The experiment was conducted at the BL16B1 beamline, which delivers a focused X-ray beam with a diameter of 500 {\mu}m, a repetition period of 2 ns, and a photon energy of 10 keV. Using a fast oscilloscope, waveforms containing continuous signal pulses were recorded within a 50 ns time window. The LGAD under test successfully resolved the 2 ns period of the SSRF. To mitigate pile-up effects and extract pulse-by-pulse information from the acquired waveforms, a waveform-level global template fitting method was employed. The time resolution was then estimated using a combined profile likelihood approach, yielding a value of 126.6 ps. The effect of random photon absorption depth on the time resolution of LGADs was studied through dedicated simulations.

physics.ins-det↗

arXiv2026

A High Gain Preamplifier Board for Low Charge Semiconductor Detectors

We present a high-gain, low-noise preamplifier board designed for reading out low-charge semiconductor detectors--specifically Low-Gain Avalanche Detectors (LGADs) and three-dimensional (3D) silicon sensors--in high-energy physics applications. The circuit employs a three-stage architecture featuring a discrete SiGe:C bipolar junction transistor (BJT)-based transimpedance amplifier (TIA) front-end followed by two resistive feedback amplification stages using LTC6431 chips. This configuration achieves a charge gain of 115.27 mV ns/fC with excellent linearity over an input range of 0.5 fC to 25 fC and a wide bandwidth spanning from 34.0 MHz to 594.3 MHz. Experimental evaluations coupled with LGAD detectors demonstrate a time resolution of 36.41 ps and an equivalent noise charge (ENC) of 0.18 fC at 20 {\deg}C. Furthermore, tests with conventional PIN sensors without a gain layer yield a timing resolution of 76.10 ps with an ENC of 0.10 fC, and tests with the 3D silicon detector yield 39.40 ps with an ENC of 0.09 fC, all measured under the same thermal condition. All configurations confirm the board's capability in low-signal regimes, significantly outperforming previous reference designs. A six-channel variant of the board has also been developed to support position-sensitive measurements. These findings demonstrate the board's suitability for laboratory-based 4D tracking detector characterisation, while simultaneously providing the groundwork for dedicated ASIC development.

physics.ins-det↗

arXiv2026

Hyperon-Nucleon Spectrometer

Chirality lies at the heart of low-energy QCD, governing the symmetry structure that shapes hadron masses and strong interaction dynamics. Among the most compelling open questions tied to chiral dynamics and spontaneous chiral symmetry breaking is the longstanding $\Lambda$ polarization puzzle, in which $\Lambda$ hyperons produced in unpolarized hadronic collisions exhibit a surprisingly large transverse polarization that remains theoretically unexplained. This whitepaper presents the proposal for the Hyperon-Nucleon Spectrometer (H-NS) at the High-Intensity heavy-ion Accelerator Facility (HIAF). Leveraging the high energy and high intensity of HIAF's proton and heavy-ion beams, the H-NS experiment will perform systematic studies of hyperon polarization phenomena and their underlying mechanisms in proton-proton ($pp$), proton-nucleus ($pA$), and nucleus-nucleus ($AA$) collisions in the fixed target mode. A wide-range beam energy scan, including proton beams from 3 GeV up to 9.3 GeV (HIAF) and up to 32 GeV (upgraded HIAF), will be conducted to examine the dependence of polarization on collision energy. The spectrometer is designed with specialized detectors capable of high-precision reconstruction of final-state baryon polarizations. Among its many interesting and important measurements, H-NS will simultaneously measure hyperon and proton spin observables to explore the polarization mechanism in hadronic interactions and the spin structure of baryons. Furthermore, the use of $pA$ and $AA$ collisions will enable detailed investigations of cold and hot nuclear matter effects on spin polarization. Its physics program and detector development will significantly benefit the future Electron-ion Collider in China.

physics.ins-det↗

arXiv2026

Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC

We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level. The first run with one merged wafer layout has been completed. The design, fabrication, and characterization of the sensors are reported in this paper.

physics.ins-det↗

arXiv2026

Design and Characterization of Racetrack 3D-Trench Silicon Sensor Based on 8-Inch Process with Excellent Time Resolution

In the extreme environments of high-luminosity colliders, traditional planar silicon sensors suffer severe radiation-induced performance degradation and fail to satisfy the stringent demands of high-precision tracking and high-speed timing in particle physics. 3D silicon sensors enhance radiation hardness by shortening charge collection distance, yet conventional designs with columnar or square-cell trench electrodes exhibit non-uniform electric fields, including saddle points and low-field regions, which degrade charge collection efficiency and timing resolution. This work presents a novel racetrack 3D-trench silicon sensor with continuous racetrack electrodes surrounding a long central collection electrode, aiming to eliminate electric field inhomogeneities. For the first time, a 23 $\mu $m shallow-etched device was fabricated on an 8-inch platform, which provides a promising basis for its subsequent mass production and engineering applications. The device performance was systematically evaluated through theoretical analysis, 3D TCAD simulations, and characterization using semiconductor parameter analyzers and transient current technique (TCT) measurements. The sensor achieves leakage current below 0.2 nA, breakdown voltage above 110 V, full depletion voltage as low as a few volts, capacitance as low as 650 fF, collected charge of 4 fC, time response of about 640 ps, and time resolution of 50 ps. This large-scale manufacturable, shallow-etched racetrack 3D-trench silicon sensor provides a competitive device solution for portable radiation detection and next-generation 4D tracking under high-radiation and high-event-rate conditions.

physics.ins-det↗

arXiv2025

Performance of USTC first batch resistive AC-LGAD sensor

In this paper, the design and characterization of AC-LGAD sensors at the University of Science and Technology of China is introduced. The sensors are characterized with an infrared laser Transient Current Technique (TCT) system for evaluating signal response characteristics and spatial resolution. The temporal resolution was quantified with electrons emitted by a Sr-90 radioactive source. The spatial resolution can reach 4 {\mu}m and a temporal resolution of 48 ps is achieved

physics.ins-det↗

arXiv2025

Inference-stage Adaptation-projection Strategy Adapts Diffusion Policy to Cross-manipulators Scenarios

Diffusion policies are powerful visuomotor models for robotic manipulation, yet they often fail to generalize to manipulators or end-effectors unseen during training and struggle to accommodate new task requirements at inference time. Addressing this typically requires costly data recollection and policy retraining for each new hardware or task configuration. To overcome this, we introduce an adaptation-projection strategy that enables a diffusion policy to perform zero-shot adaptation to novel manipulators and dynamic task settings, entirely at inference time and without any retraining. Our method first trains a diffusion policy in SE(3) space using demonstrations from a base manipulator. During online deployment, it projects the policy's generated trajectories to satisfy the kinematic and task-specific constraints imposed by the new hardware and objectives. Moreover, this projection dynamically adapts to physical differences (e.g., tool-center-point offsets, jaw widths) and task requirements (e.g., obstacle heights), ensuring robust and successful execution. We validate our approach on real-world pick-and-place, pushing, and pouring tasks across multiple manipulators, including the Franka Panda and Kuka iiwa 14, equipped with a diverse array of end-effectors like flexible grippers, Robotiq 2F/3F grippers, and various 3D-printed designs. Our results demonstrate consistently high success rates in these cross-manipulator scenarios, proving the effectiveness and practicality of our adaptation-projection strategy. The code will be released after peer review.

cs.RO↗

arXiv2023

Magnetic-field-induced nonlinear transport in HfTe5

The interplay of electron correlations and topological phases gives rise to various exotic phenomena including fractionalization, excitonic instability, and axionic excitation. Recently-discovered transition-metal pentatellurides can reach the ultra-quantum limit in low magnetic fields and serve as good candidates for achieving such a combination. Here, we report evidences of density wave and metal-insulator transition in HfTe5 induced by intense magnetic fields. Using the nonlinear transport technique, we detect a distinct nonlinear conduction behavior in the longitudinal resistivity within the a-c plane, corresponding to the formation of a density wave induced by magnetic fields. In high fields, the onset of the nonlinear conduction in the Hall resistivity indicates an impurity-pinned magnetic freeze-out as the possible origin of the insulating behavior. These frozen electrons can be gradually re-activated into mobile states above a threshold electric field. These experimental evidences call for further investigations into the underlying mechanism for the bulk quantum Hall effect and field-induced phase transtions in pentatellurides.

cond-mat.mes-hall↗

arXiv2018

Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers

Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems.

cond-mat.mes-hall↗

arXiv2017

Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2

Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.

cond-mat.mtrl-sci↗

arXiv2016

Evidence for pressure-induced node-pair annihilation in Cd3As2

As an intermediate state in the topological phase diagram, Dirac semimetals are of particular interest as a platform for studying topological phase transitions under external modulations. Despite a growing theoretical interest in this topic, it remains a substantial challenge to experimentally tune the system across topological phase transitions. Here, we investigate the Fermi surface evolution of Cd3As2 under high pressure through magnetotransport. A sudden change in Berry phase occurs at 1.3 GPa along with the unanticipated shrinkage of the Fermi surface, which occurs well below the structure transition point (~2.5 GPa). High pressure X-ray diffraction also reveals an anisotropic compression of the Cd3As2 lattice around a similar pressure. Corroborated by the first-principles calculations we show that an axial compression will shift the Dirac nodes towards the Brillouin zone center and eventually introduces a finite energy gap. The ability to tune the node position, a vital parameter of Dirac semimetals, can have dramatic impacts on the corresponding topological properties such as the Fermi arc surface states and the chiral anomaly. Our study demonstrates axial compression as an efficient approach for manipulating the band topology and exploring the critical phenomena near the topological phase transition in Cd3As2.

cond-mat.mtrl-sci↗

arXiv2016

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2016

Room-temperature chiral charge pumping in Dirac semimetals

Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.

cond-mat.mtrl-sci↗

arXiv2016

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2016

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

cond-mat.mes-hall↗

arXiv2016

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

cond-mat.mtrl-sci↗

arXiv2015

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

cond-mat.mtrl-sci↗