arXiv subjects

Yoichi Ando

Publications and source records attributed to Yoichi Ando.

At least 37 records · Page 2Linked to original sources

arXiv2024

Long-range crossed Andreev reflection in topological insulator nanowires proximitized by a superconductor

Crossed Andreev reflection (CAR) is a nonlocal transport phenomenon that creates/detects Cooper-pair correlations between distant places. It is also the basis of Cooper-pair splitting to generate remote entanglement. Although CAR has been extensively studied in semiconductors proximity-coupled to a superconductor, it has been very difficult to observe it in a topological insulator (TI). Here we report the first observation of CAR in a proximitized TI nanowire (TINW). We performed local and nonlocal conductance spectroscopy on mesoscopic TINW devices in which superconducting (Nb) and metallic (Pt/Au) contacts are made on a bulk-insulating TINW. The local conductance detected a hard gap, accompanied by the appearance of Andreev bound states that can reach zero-bias, while a negative nonlocal conductance was occasionally observed upon sweeping the chemical potential, giving evidence for CAR. Surprisingly, the CAR signal was detected even over 1.5 $μ$m, which implies that pair correlations extend over a length scale much longer than the expected superconducting coherence length of either Nb or the proximitised TINW. Such a long-range CAR effect is possibly due to an intricate role of disorder in proximitized nanowires. Also, our 0.9-$μ$m device presented a decent Cooper-pair splitting efficiency of up to 0.5.

cond-mat.mes-hall↗

arXiv2024

Observation of Josephson Harmonics in Tunnel Junctions

Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminum oxide (AlO$_x$) tunnel Josephson junctions as the sources of nonlinearity necessary to perform quantum operations. Analyses of these junctions typically assume an idealized, purely sinusoidal current-phase relation. However, this relation is only expected to hold in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard current-phase relation fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts percent-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The presence and impact of Josephson harmonics has important implications for developing AlO$_x$-based quantum technologies including quantum computers and parametric amplifiers. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving their anharmonicity.

quant-ph↗

arXiv2024

Universal Role of Combined Symmetry for the Protection of the Dirac Cone in Antiferromagnetic Topological Insulators

Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the symmetry protecting the Dirac-cone surface state (SS) and acquire the mass of Dirac fermions, the mechanism has yet to be clarified. To address this issue, we carried out micro-focused angle-resolved photoemission spectroscopy for GdBi hosting the type-II AF order, and uncovered the stripe-type 2$\times$1 reconstruction of the Fermi surface associated with the AF band folding. Intriguingly, in contrast to NdBi with the type-I AF order displaying the surface-selective Dirac-fermion mass, GdBi shows massless behavior irrespective of AF domains due to the robust topological protection. These results strongly suggest a crucial role of the ThetaTD (time-reversal and translational) symmetry to create the Dirac-fermion mass in AF TIs.

cond-mat.mes-hall↗

arXiv2024

Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films

We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films (thickness 7 - 30 nm) with varying Sb-concentration $x$, to gain insight into the charge puddles formed in thin films of a compensated topological insulator. We found that the amplitude of the potential fluctuations, $Γ$, is between 5 to 14 meV for quasi-bulk conducting films and about 30 - 40 meV for bulk-insulating films. The length scale of the fluctuations, $λ$, was found to span the range of 13 - 54 nm, with no clear correlation with $Γ$. Applying a magnetic field normal to the surface, we observe the condensation of the two-dimensional topological surface state into Landau levels and find a weak but positive correlation between $Γ$ and the spectral width of the Landau-level peaks, which suggests that quantum smearing from drift motion is the source of the Landau level broadening. Our systematic measurements give useful guidelines for realizing $(\mathrm{Bi}_{1-x}\mathrm{Sb}_x)_2\mathrm{Te}_3$ thin films with an acceptable level of potential fluctuations. In particular, we found that $x\approx 0.65$ realizes the situation where $Γ$ shows a comparatively small value of 14 meV and the Dirac point lies within $\sim$10 meV of the Fermi energy.

cond-mat.mes-hall↗

arXiv2024

Parallel-Field Hall effect in ZrTe$_5$

Parallel-field Hall effect is the appearance of a Hall voltage $V_{\rm H}$ that is transverse to the current $I$ when the magnetic field $B$ is applied parallel to $I$ (i.e. $B \parallel I \perp V_{\rm H}$). Such an effect is symmetry forbidden in most cases and hence is very unusual. Interestingly, the existence of a finite parallel-field Hall effect was reported for the layered topological semimetal ZrTe$_5$ and was proposed to be due to Berry curvature. However, it is forbidden for the known symmetry of ZrTe$_5$ and the possible existence of a misaligned out-of-plane magnetic field was not completely ruled out. Here, we elucidate the existence of the parallel-field Hall effect in ZrTe$_5$ with careful magnetic-field alignment. We interpret this result to originate from symmetry breaking and quantitatively explain the observed parallel-field Hall signal by considering a tilting of the Fermi surface allowed by broken symmetry.

cond-mat.mtrl-sci↗

arXiv2024

Selective-Area Epitaxy of Bulk-Insulating (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ Films and Nanowires by Molecular Beam Epitaxy

The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively-grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.

cond-mat.mtrl-sci↗

arXiv2024

Propagation, dissipation and breakdown in quantum anomalous Hall edge states probed by microwave edge plasmons

The quantum anomalous Hall (QAH) effect, with its single chiral, topologically protected edge state, offers a platform for flying Majorana states as well as non-reciprocal microwave devices. While recent research showed the non-reciprocity of edge plasmons in Cr-doped $\mathrm{(Bi_xSb_\text{1-x})_2Te_3}$, the understanding of their dissipation remains incomplete. Our study explores edge plasmon dissipation in V-doped $\mathrm{(Bi_xSb_\text{1-x})_2Te_3}$ films, analyzing microwave transmission across various conditions. We identify interactions with charge puddles as a primary source of dissipation, providing insights critical for developing improved QAH-based technologies.

cond-mat.mes-hall↗

arXiv2024

Rotation of gap nodes in the topological superconductor Cu$_x$(PbSe)$_5$(Bi$_2$Se$_3$)$_6$

Among the family of odd-parity topological superconductors derived from $\mathrm{Bi}_{2}\mathrm{Se}_{3}$, $\mathrm{Cu}_{x}(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ (CPSBS) has been elucidated to have gap nodes. Although the nodal gap structure has been established by specific-heat and thermal-conductivity measurements, there has been no direct observation of the superconducting gap of CPSBS using scanning tunnelling spectroscopy (STS). Here we report the first STS experiments on CPSBS down to 0.35 K, which found that the vortices generated by out-of-plane magnetic fields have an elliptical shape, reflecting the anisotropic gap structure. The orientation of the gap minima is found to be aligned with the bulk direction when the surface lattice image shows twofold symmetry, but, surprisingly, it is rotated by 30$^{\circ}$ when twofold symmetry is absent. In addition, the superconducting gap spectra in zero magnetic field suggest that the gap nodes are most likely lifted. We argue that only an emergent symmetry at the surface, allowing for a linear superposition of gap functions with different symmetries in the bulk, can lead to the rotation of the gap nodes. The absence of inversion symmetry at the surface additionally lifts the nodes. This result establishes the subtle but crucial role of crystalline symmetry in topological superconductivity.

cond-mat.supr-con↗

arXiv2024

Phonon thermal Hall effect in charge-compensated topological insulators

From a systematic study of thermal and charge transport in various single crystals of compensated topological insulators we identify the evolution of a large low-temperature thermal Hall effect as a characteristic common feature. In order to separate phononic and electronic contributions in the measured longitudinal and transverse thermal conductivity, the electronic contributions are estimated from corresponding electrical resisivity and Hall effect measurements on the same samples by using the Wiedemann-Franz law. As may be expected for charge-compensated topological insulators the longitudinal thermal conductivity is phonon-dominated in all samples. However, we also find a pronounced field-linear thermal Hall effect that becomes most pronounced in the low-temperature range, where all samples are good electrical insulators. This indicates an underlying phononic mechanism of the thermal Hall effect and in this respect the topological insulators resemble other, mainly ionic, insulators, which have been reported to show a phonon-induced thermal Hall effect, but its underlying phononic mechanism remains to be identified. Our observation of a comparable thermal Hall ratio in topological insulators supports a theoretical scenario that explains a thermal Hall effect through skew scattering on charged impurities.

cond-mat.str-el↗

arXiv2024

Quasiparticle effects in magnetic-field-resilient 3D transmons

Recent research shows that quasiparticle-induced decoherence of superconducting qubits depends on the superconducting-gap asymmetry originating from the different thicknesses of the top and bottom films in Al/AlO$_x$/Al junctions. Magnetic field is a key tuning knob to investigate this dependence as it can change the superconducting gaps in situ. We present measurements of the parity-switching time of a field-resilient 3D transmon with in-plane field up to 0.41T. At low fields, small parity splitting requires qutrit pulse sequences for parity measurements. We measure a non-monotonic evolution of the parity lifetime with in-plane magnetic field, increasing up to 0.2T, followed by a decrease at higher fields. We demonstrate that the superconducting-gap asymmetry plays a crucial role in the observed behavior. At zero field, the qubit frequency is nearly resonant with the superconducting-gap difference, favoring the energy exchange with the quasiparticles and so enhancing the parity-switching rate. With a higher magnetic field, the qubit frequency decreases and gets detuned from the gap difference, causing the initial increase of the parity lifetime, while photon-assisted qubit transitions increase, producing the subsequent decrease at higher fields. Besides giving a deeper insight into the parity-switching mechanism in conventional transmon qubits, we establish that Al-AlO$_x$-Al JJs could be used in architectures for the parity-readout and manipulation of topological qubits based on Majorana zero modes.

quant-ph↗

arXiv2024

Magnetic-field dependence of a Josephson traveling-wave parametric amplifier and integration into a high-field setup

We investigate the effect of magnetic field on a photonic-crystal Josephson traveling-wave parametric amplifier (TWPA). We show that the observed change in photonic bandgap and plasma frequency of the TWPA can be modeled by considering the suppression of the critical current in the Josephson junctions (JJs) of the TWPA due to the Fraunhofer effect and closing of the superconducting gap. Accounting for the JJ geometry is crucial for understanding the field dependence. In one in-plane direction, the TWPA bandgap can be shifted by 2 GHz using up to 60 mT of field, without losing gain or bandwidth, showing that TWPAs without SQUIDs can be field tunable. In the other in-plane direction, the magnetic field is perpendicular to the larger side of the Josephson junctions, so the Fraunhofer effect has a smaller period. This larger side of the JJs is modulated to create the bandgap. The field interacts more strongly with the larger junctions, and as a result, the TWPA bandgap closes and reopens as the field increases, causing the TWPA to become severely compromised already at 2 mT. A slightly higher operating limit of 5 mT is found in out-of-plane field, for which the TWPA's response is hysteretic. These measurements reveal the requirements for magnetic shielding needed to use TWPAs in experiments where high fields at the sample are required; we show that with magnetic shields we can operate the TWPA while applying over 2 T to the sample.

quant-ph↗

arXiv2023

Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures

The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces are poorly explored so far. Here, we report the discovery of Pd diffusion induced polarization at interfaces between superconductive Pd$_{1+x}$(Bi$_{0.4}$Te$_{0.6}$)$_2$ (xPBT, $0\le x \le 1$) and Pd-intercalated Bi$_2$Te$_3$ by using atomic-resolution scanning transmission electron microscopy. Our quantitative image analysis reveals that nanoscale lattice strain and QL polarity synergistically suppress and promote the Pd diffusion at the normal and parallel interfaces, formed between Te-Pd-Bi triple layers (TLs) and Te-Bi-Te-Bi-Te quintuple layers (QLs), respectively. Further, our first-principles calculations unveil that the superconductivity of xPBT phase and topological nature of Pd-intercalated Bi$_2$Te$_3$ phase are robust against the broken inversion symmetry. These findings point out the necessity of considering coexistence of electric polarization with superconductivity and topology in such S-TI systems.

cond-mat.mtrl-sci↗

arXiv2023

Antiferromagnetic topological insulator with selectively gapped Dirac cones

Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials.

cond-mat.mes-hall↗

arXiv2023

Nonlinear transport due to magnetic-field-induced flat bands in the nodal-line semimetal ZrTe5

The Dirac material ZrTe$_5$ at very low carrier density was recently found to be a nodal-line semimetal, where ultra-flat bands are expected to emerge in magnetic fields parallel to the nodal-line plane. Here we report that in very low carrier-density samples of ZrTe$_5$, when the current and the magnetic field are both along the crystallographic $a$ axis, the current-voltage characteristics presents a pronounced nonlinearity which tends to saturate in the ultra quantum limit. The magnetic-field dependence of the nonlinear coefficient is well explained by the Boltzmann theory for flat-band transport, and we argue that this nonlinear transport is likely due to the combined effect of flat bands and charge puddles, the latter appear due to very low carrier densities.

cond-mat.mtrl-sci↗

arXiv2023

Unusual surface states associated with the PT-symmetry breaking and antiferromagnetic band folding in NdSb

We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all three types of single-q antiferromagnetic (AF) domains at the surface. We found that two of the three surfaces whose AF-ordering vector lies within the surface plane commonly show twofold symmetric surface states (SSs) around the bulk-band edges, whereas the other surface with an out-of-plane AF-ordering vector displays fourfold symmetric shallow electronlike SS at the Brillouin-zone center. We suggest that these SSs commonly originate from the combination of the PT (space-inversion and time-reversal) symmetry breaking at the surface and the band folding due to the AF order. The present results pave a pathway toward understanding the relationship between the symmetry and the surface electronic states in antiferromagnets.

cond-mat.mes-hall↗

arXiv2023

Topological Insulators

Topological insulators are characterized by insulating bulk and conducting surface, the latter is a necessity consequence of the nontrivial topology of the wavefunctions forming the valence band. This chapter gives a historical overview of the discovery of topological insulators and a concise description of the $Z_2$ topology which defines them. The concept of topological insulators have been extended to various other topologies, giving rise to the recognition of further topological states of matter such as topological crystalline insulators and higher-order topological insulators. Representative materials of topological insulators, their synthesis techniques, and the ways for the experimental confirmation of the topological nature are introduced. Among the interesting phenomena derived from topological insulators, topological superconductivity, Majorana zero modes, and quantum anomalous Hall effect are briefly discussed.

cond-mat.mes-hall↗

arXiv2023

Induced superconducting correlations in the quantum anomalous Hall insulator

Inducing Cooper pairing in a thin ferromagnetic topological insulator in the quantum anomalous Hall state (called quantum anomalous Hall insulator, QAHI) is a promising way to realize topological superconductivity with associated chiral Majorana edge states. However, finding evidence of superconducting proximity effect in a QAHI has proven to be a considerable challenge due to inherent experimental difficulties. Here we report the observation of crossed Andreev reflection (CAR) across a narrow superconducting Nb electrode contacting the chiral edge state of a QAHI, evinced by a negative nonlocal voltage measured downstream from the grounded Nb electrode. This is an unambiguous signature of induced superconducting pair correlation in the chiral edge state. Our theoretical analysis demonstrates that CAR processes of the chiral edge are not strongly dependent on the nature of the superconductivity that mediates them. Nevertheless, the characteristic length of the CAR process is found to be much longer than the superconducting correlation length in Nb, which suggests that the CAR is in fact mediated by superconductivity induced on the QAHI surface. The approach and results presented here provide a foundation for future studies of topological superconductivity and Majorana physics, as well as for the search for non-Abelian zero modes.

cond-mat.mes-hall↗

arXiv2023

Topological insulator spin transistor

When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the Dirac-cone surface state of a TI should lead to a fixed sign of this spin polarization for a given current direction, but experimentally, both signs that agree and disagree with the theory expectation for the surface state Dirac cone have been observed in the past. Although the origin of the wrong sign has not been conclusively elucidated, this observation points to the possibility that one may switch the spin polarization at will to realize a spin transistor operation. Here we report the observation of both signs of spin polarization in the very same device and demonstrate the tunability between the two by electrostatic gating, which gives a proof of principle of a topological insulator spin transistor. This switching behaviour is explained using a minimal model of competing contributions from the topological surface state and trivial Rashba-split states.

cond-mat.mes-hall↗