Searcharxiv⌕ Search

arXiv subjects

Yoichi Ando

Publications and source records attributed to Yoichi Ando.

At least 55 records · Page 3Linked to original sources

Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices

In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-subband physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.

cond-mat.mes-hall↗

Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires

Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on inversion symmetry breaking leading to the manifestation of spin-orbit coupling, which is a relativistic effect. In typical materials the rectification coefficient $γ$ due to MCA is usually $|γ| \lesssim 1$ ${\rm A^{-1} T^{-1}}$ and the maximum values reported so far are $|γ| \sim 100$ ${\rm A^{-1} T^{-1}}$ in carbon nanotubes and ZrTe$_5$. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe an MCA consistent with theory and $|γ| \sim 100000$ ${\rm A^{-1} T^{-1}}$, the largest ever reported MCA rectification coefficient in a normal conductor.

cond-mat.mes-hall↗

Proximity-induced superconductivity in (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological-insulator nanowires

When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes. While the existence of such peculiar 1D states has been experimentally confirmed, the realization of robust proximity-induced superconductivity in topological-insulator nanowires remains a challenge. Here, we report the realization of superconducting topological-insulator nanowires based on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST) thin films. When two rectangular pads of palladium are deposited on a BST thin film with a separation of 100--200 nm, the BST beneath the pads is converted into a superconductor, leaving a nanowire of BST in-between. We found that the interface is epitaxial and has a high electronic transparency, leading to a robust superconductivity induced in the BST nanowire. Due to its suitable geometry for gate-tuning, this platform is promising for future studies of Majorana zero modes.

cond-mat.mes-hall↗

Gigantic magnetochiral anisotropy in the topological semimetal ZrTe5

Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe5 crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy, which is the largest ever observed to date. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.

cond-mat.mes-hall↗

Observability of superconductivity in Sr-doped Bi2Se3 at the surface using scanning tunneling microscope

The superconducting materials family of doped Bi2Se3 remains intensively studied in the field of condensed matter physics due to strong experimental evidence for topologically non-trivial superconductivity in the bulk. However, at the surface of these materials, even the observation of superconductivity itself is still controversial. We use scanning tunneling microscopy (STM) down to 0.4 K to show that on the surface of bulk superconducting SrxBi2Se3, no gap in the density of states is observed around the Fermi energy as long as clean metallic probe tips are used. Nevertheless, using scanning electron microscopy and energy-dispersive X-ray analysis, we find that micron-sized flakes of SrxBi2Se3 are easily transferred from the sample onto the STM probe tip and that such flakes consistently show a superconducting gap in the density of states. We argue that the superconductivity in SrxBi2Se3 crystals does not extend to the surface when the topological surface state (TSS) is intact, but in micro-flakes the TSS has been destroyed due to strain and allows the superconductivity to extend to the surface. To understand this phenomenon, we propose that the local electric field, always found in electron doped Bi2Se3 in the presence of the TSS due to an intrinsic upward band bending, works against superconductivity at the surface.

cond-mat.supr-con↗

Opportunities in topological insulator devices

Topological insulators (TIs) are expected to be a promising platform for novel quantum phenomena, whose experimental realizations require sophisticated devices. In this Technical Review, we discuss four topics of particular interest for TI devices: topological superconductivity, quantum anomalous Hall insulator as a platform for exotic phenomena, spintronic functionalities, and topological mesoscopic physics. We also discuss the present status and technical challenges in TI device fabrications to address new physics.

cond-mat.mes-hall↗

Magnetic-field resilience of 3D transmons with thin-film Al/AlO$_x$/Al Josephson junctions approaching 1 T

Magnetic-field-resilient superconducting circuits enable sensing applications and hybrid quantum-computing architectures involving spin or topological qubits and electro-mechanical elements, as well as studying flux noise and quasiparticle loss. We investigate the effect of in-plane magnetic fields up to 1 T on the spectrum and coherence times of thin-film 3D aluminum transmons. Using a copper cavity, unaffected by strong magnetic fields, we can solely probe the magnetic-field effect on the transmons. We present data on a single-junction and a SQUID transmon, that were cooled down in the same cavity. As expected, transmon frequencies decrease with increasing fields, due to a suppression of the superconducting gap and a geometric Fraunhofer-like contribution. Nevertheless, the thin-film transmons show strong magnetic-field resilience: both transmons display microsecond coherence up to at least 0.65 T, and $T_1$ remains above 1 $\mathrmμ$s over the entire measurable range. SQUID spectroscopy is feasible up to 1 T, the limit of our magnet. We conclude that thin-film aluminum Josephson junctions are a suitable hardware for superconducting circuits in the high-magnetic-field regime.

quant-ph↗

Current-induced breakdown of the quantum anomalous Hall effect

The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current density, an abrupt breakdown of the dissipationless state occurs with a relatively small critical current, limiting the applications of the QAHE. We investigate the mechanism of this breakdown by studying multi-terminal devices and identified that the electric field created between opposing chiral edge states lies at the origin. We propose that electric-field-driven percolation of two-dimensional charge puddles in the gapped surface states of compensated topological-insulator films is the most likely cause of the breakdown.

cond-mat.mes-hall↗

Unveiling quasiparticle dynamics of topological insulators through Bayesian modelling

Quasiparticle - a key concept to describe interacting particles - characterizes electron-electron interaction in metals (Fermi liquid) and electron pairing in superconductors. While this concept essentially relies on the simplification of hard-to-solve many-body problem into one-particle picture and residual effects, a difficulty in disentangling many-body effects from experimental quasiparticle signature sometimes hinders unveiling intrinsic low-energy dynamics, as highlighted by the fierce controversy on the origin of Dirac-band anomaly in graphene and dispersion kink in high-temperature superconductors. Here, we propose an approach to solve this fundamental problem - the Bayesian modelling of quasiparticles. We have chosen a topological insulator $\mathrm{TlBi(S,Se)_2}$ as a model system to formulate an inverse problem of quasiparticle spectra with semiparametric Bayesian analysis, and successfully extracted one-particle and many-body characteristics, i.e. the intrinsic energy gap and unusual lifetime in Dirac-quasiparticle bands. Our approach is widely applicable to clarify the quasiparticle dynamics of quantum materials.

cond-mat.mes-hall↗

The Vertical Position of Sr Dopants in the Sr$_x$Bi$_2$Se$_3$ Superconductor

The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order to determine the vertical position of the dopants -- one of the key parameters for understanding topological superconductivity in this material -- for the case of Sr$_{x}$Bi$_2$Se$_3$. In a novel approach we analyze the NIXSW data in consideration of the inelastic mean free path of the photoemitted electrons, which allows us to distinguish between symmetry equivalent sites. We find that Sr-atoms are not situated inside the van der Waals gap between the Bi$_2$Se$_3$ quintuple layers but rather in the quintuple layer close to the outer Se planes.

cond-mat.supr-con↗

Relaxation dynamics of the optically driven nonequilibrium states in the electron- and hole-doped topological-insulator materials $(Bi_{1-x}Sb_{x})_{2}Te_{3}$

We report on time-resolved mid-infrared-pump terahertz-transmission-probe studies of the topological-insulator materials $(Bi_{1-x}Sb_{x})_{2}Te_{3}$, in which by varying x charge carriers are chemically tuned to be of n-type or p-type. Relaxation dynamics is found to be different in various aspects for transitions below or above the bandgap, which are selectively excited by changing the pump-pulse energy. For the below-bandgap excitation, an exponential decay of the pump-probe signals is observed, which exhibits linear dependence on the pump-pulse fluence. In contrast, the relaxation dynamics for the above-bandgap excitation is characterized by a compressed exponential decay and nonlinear fluence dependence at high pump flunences, which reflects interaction of the excited nonequilibrium states.

cond-mat.mtrl-sci↗

2D-Dirac surface states and bulk gap probed via quantum capacitance in a 3D topological insulator

BiSbTeSe$_2$ is a 3D topological insulator (3D-TI) with Dirac type surface states and low bulk carrier density, as donors and acceptors compensate each other. Dominating low temperature surface transport in this material is heralded by Shubnikov-de Haas oscillations and the quantum Hall effect. Here, we experimentally probe and model the electronic density of states (DOS) in thin layers of BiSbTeSe$_2$ by capacitance experiments both without and in quantizing magnetic fields. By probing the lowest Landau levels, we show that a large fraction of the electrons filled via field effect into the system ends up in (localized) bulk states and appears as a background DOS. The surprisingly strong temperature dependence of such background DOS can be traced back to Coulomb interactions. Our results point at the coexistence and intimate coupling of Dirac surface states with a bulk many-body phase (a Coulomb glass) in 3D-TIs.

cond-mat.mes-hall↗

Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3

Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ leads to an epitaxial self-formation of PdTe$_2$ superconductor having the superconducting transition temperature of ~1 K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$. This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs.

cond-mat.mes-hall↗

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

cond-mat.mes-hall↗

Crystal structure and distortion of superconducting Cu$_x$Bi$_2$Se$_{3}$

The crystal structure of the candidate topological superconductor Cu$_x$Bi$_2$Se$_3$ was studied by single-crystal neutron diffraction using samples obtained by inserting the Cu dopant electrochemically. Neither structural refinements nor calculated scattering-density maps find a significant occupation of Cu at the intercalation site between the quintuple layers of Bi$_2$Se$_3$. Following Bragg reflection intensities as function of temperature, there is no signature of a structural phase transition between 295 and 2 K. However, the analysis of large sets of Bragg reflections indicates a small structural distortion breaking the rotational axis due to small displacements of the Bi ions.

cond-mat.supr-con↗

Conversion of a conventional superconductor into a topological superconductor by topological proximity effect

Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a difficulty in accessing the topological interface buried deep beneath the surface. Here, we propose an alternative approach to realize topological superconductivity without SPE. In a Pb(111) thin film grown on TlBiSe2, we discover that the Dirac-cone state of substrate TlBiSe2 migrates to the top surface of Pb film and obtains an energy gap below the superconducting transition temperature of Pb. This suggests that a BCS superconductor is converted into a TSC by the topological proximity effect. Our discovery opens a route to manipulate topological superconducting properties of materials.

cond-mat.supr-con↗

Direct visualization of the nematic superconductivity in Cu$_x$Bi$_2$Se$_3$

Cu$_x$Bi$_2$Se$_3$ hosts both topological surface states and bulk superconductivity. It has been identified recently as a topological superconductor (TSC) with an extraordinary nematic, i. e. C2-symmetric, superconducting state and odd-parity pairing. Here, using scanning tunneling microscopy (STM), we directly examine the response of the superconductivity of CuxBi2Se3 to magnetic field. Under out-of-plane fields, we discover elongated magnetic vortices hosting zero-bias conductance peaks consistent with the Majorana bound states expected in a TSC. Under in-plane fields, the average superconducting gap exhibits two-fold symmetry with field orientation; the long C2 symmetry axes are pinned to the dihedral mirror planes under B//=0.5 T but rotate slightly under B//=1.0 T. Moreover, a nodeless Δ4x gap structure is semi-quantitatively determined for the first time. Our data paint a microscopic picture of the nematic superconductivity in CuxBi2Se3 and pose strong constraints on theory.

cond-mat.supr-con↗

Superconductivity in Sn$_{1-x}$In$_{x}$Te thin films grown by molecular beam epitaxy

The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such samples would be useful for addressing the nature of its superconductivity. Here we report the successful molecular beam epitaxy growth of superconducting Sn$_{1-x}$In$_{x}$Te films by using Bi$_2$Te$_3$ as a buffer layer. The data obtained from tunnel junctions made on such films show the appearance of two superconducting gaps, which points to the coexistence of bulk and surface superconductivity. Given the spin-momentum locking of the surface states, the surface superconductivity is expected to be topological with an effective $p$-wave character. Since the topological surface states of SnTe consist of four Dirac cones, this platform offers an interesting playground for studying topological surface superconductivity with additional degrees of freedom.

cond-mat.mtrl-sci↗