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Yong P. Chen

Publications and source records attributed to Yong P. Chen.

At least 127 records · Page 7Linked to original sources
arXiv2011

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

cond-mat.mes-hall↗
arXiv2011

Unequal Layer Densities in Bilayer Wigner Crystal at High Magnetic Field

We report studies of pinning mode resonances of magnetic field induced bilayer Wigner crystals of bilayer hole samples with negligible interlayer tunneling and different interlayer separations d, in states with varying layer densities, including unequal layer densities. With unequal layer densities, samples with large d relative to the in-plane carrier-carrier spacing a, two pinning resonances are present, one for each layer. For small d/a samples, a single resonance is observed even with significant density imbalance. These samples, at balance, were shown to exhibit an enhanced pinning mode frequency [Zhihai Wang et al., Phys. Rev. Lett. 136804 (2007)], which was ascribed to a one-component, pseudospin ferromagnetic Wigner solid. The evolution of the resonance frequency and line width indicates the quantum interlayer coherence survives at moderate density imbalance, but disappears when imbalance is sufficiently large.

cond-mat.mes-hall↗
arXiv2010

Effect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport

We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity ratio between Raman "D" and "G" peaks, I(D)/I(G) (commonly used to characterize disorder in graphene) is observed to increase approximately linearly with the number (N(e)) of plasma etching pulses initially, but then decreases at higher Ne. We also discuss implications of our data for extracting graphene crystalline domain sizes from I(D)/I(G). At the highest Ne measured, the "2D" peak is found to be nearly suppressed while the "D" peak is still prominent. Electronic transport measurements in plasma-etched graphene show an up-shifting of the Dirac point, indicating hole doping. We also characterize mobility, quantum Hall states, weak localization and various scattering lengths in a moderately etched sample. Our findings are valuable for understanding the effects of plasma etching on graphene and the physics of disordered graphene through artificially generated defects.

cond-mat.mes-hall↗
arXiv2010

Effect of electron-beam irradiation on graphene field effect devices

Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electron-beam caused negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as due to n-doping in the graphene from the interaction of the energetic electron beam with the substrate. The shift of the CNP is substantially reduced for suspended graphene devices. The electron beam is seen to also decrease the carrier mobilities and minimum conductivity, indicating defects created in the graphene. The findings are valuable for understanding the effects of radiation damage on graphene and for the development of radiation-hard graphene-based electronics.

cond-mat.mes-hall↗
arXiv2010

Observation of pinning mode in Wigner solid of 1/3 fractional quantum Hall excitations

We report the observation of a resonance in the microwave spectra of the real diagonal conductivities of a two-dimensional electron system within a range of ~ +- .0.015 $ from filling factor $ν=1/3$. The resonance is remarkably similar to resonances previously observed near integer $ν$, and is interpreted as the collective pinning mode of a disorder-pinned Wigner solid phase of $e/3$-charged carriers .

cond-mat.mes-hall↗
arXiv2010

Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: a Molecular Dynamics Study

We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to ~4 nm wide and ~10 nm long). For symmetric nanoribbons, the calculated thermal conductivity (e.g. ~2000 W/m-K @400K for a 1.5 nm {\times} 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly-shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30° gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.

cond-mat.mes-hall↗
arXiv2010

Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.

cond-mat.mes-hall↗
arXiv2010

Tuning the thermal conductivity of graphene nanoribbons by edge passivation and isotope engineering: a molecular dynamics study

Using classical molecular dynamics simulation, we have studied the effect of edge-passivation by hydrogen (H-passivation) and isotope mixture (with random or supperlattice distributions) on the thermal conductivity of rectangular graphene nanoribbons (GNRs) (of several nanometers in size). We found that the thermal conductivity is considerably reduced by the edge H-passivation. We also find that the isotope mixing can reduce the thermal conductivities, with the supperlattice distribution giving rise to more reduction than the random distribution. These results can be useful in nanoscale engineering of thermal transport and heat management using GNRs.

cond-mat.mes-hall↗
arXiv2010

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local doping. Important sources for such doping found in our samples include metal contacts, edges of graphene, structural defects, and resist residues.

cond-mat.mes-hall↗
arXiv2010

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

cond-mat.mes-hall↗
arXiv2010

Entanglement Switch for Dipole Arrays

We propose a new entanglement switch of qubits consisting of electric dipoles, oriented along or against an external electric field and coupled by the electric dipole-dipole interaction. The pairwise entanglement can be tuned and controlled by the ratio of the Rabi frequency and the dipole-dipole coupling strength. Tuning the entanglement can be achieved for one, two and three-dimensional arrangements of the qubits. The feasibility of building such an entanglement switch is also discussed.

quant-ph↗
arXiv2010

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.

cond-mat.mtrl-sci↗
arXiv2009

Pinning mode resonance of a Skyrme crystal near Landau level filling factor $ν$=1

Microwave pinning-mode resonances found around integer quantum Hall effects, are a signature of crystallized quasiparticles or holes. Application of in-plane magnetic field to these crystals, increasing the Zeeman energy, has negligible effect on the resonances just below Landau level filling $ν=2$, but increases the pinning frequencies near $ν=1$, particularly for smaller quasiparticle/hole densities. The charge dynamics near $ν=1$, characteristic of a crystal order, are affected by spin, in a manner consistent with a Skyrme crystal.

cond-mat.mes-hall↗
arXiv2008

AFM local oxidation nanolithography of graphene

We demonstrate the local oxidation nanopatterning of graphene films by an atomic force microscope. The technique provides a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nm precision. We demonstrate fabrication of a 25-nm-wide nanoribbon and sub-micron size nanoring from a graphene flake. We also found that we can write either trenches or bumps on the graphene surface depending on the lithography conditions. We attribute the bumps to partial oxidation of the surface and incorporation of oxygen into the graphene lattice.

cond-mat.mes-hall↗
arXiv2008

Phase Coherence and Superfluid-Insulator Transition in a Disordered Bose-Einstein Condensate

We have studied the effects of a disordered optical potential on the transport and phase coherence of a Bose-Einstein condensate (BEC) of 7Li atoms. At moderate disorder strengths (V_D), we observe inhibited transport and damping of dipole excitations, while in time-of-flight images, random but reproducible interference patterns are observed. In-situ images reveal that the appearance of interference is correlated with density modulation, without complete fragmentation. At higher V_D, the interference contrast diminishes as the BEC fragments into multiple pieces with little phase coherence.

cond-mat.other↗
arXiv2006

Pinning modes and interlayer correlation in high magnetic field bilayer Wigner solids

We report studies of pinning mode resonances in the low total Landau filling (ν) Wigner solid of a series of bilayer hole samples with negligible interlayer tunneling, and with varying interlayer separation d. Comparison of states with equal layer densities (p,p) to single layer states (p,0) produced {in situ} by biasing, indicates that there is interlayer quantum correlation in the solid at small d. Also, the resonance frequency at small d is decreased just near ν=1/2 and 2/3, indicating the importance in the solid of correlations related to those in the fractional quantum Hall effects.

cond-mat.mes-hall↗
arXiv2006

Melting of a 2D Quantum Electron Solid in High Magnetic Field

The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by electrons in a semiconductor sample under a strong perpendicular magnetic field\cite{shay:97} ($B$), the $T_m$ is not controlled by $n$, but effectively by the \textit{quantum correlation} between the electrons through the Landau level filling factor $ν$=$nh/eB$. Such melting behavior, different from that of all other known solids (including a classical 2D electron solid at zero magnetic field\cite{grim:79}), attests to the quantum nature of the magnetic field induced electron solid. Moreover, we found the $T_m$ to increase with the strength of the sample-dependent disorder that pins the electron solid.

cond-mat.str-el↗