arXiv subjects

Yosuke Goto

Publications and source records attributed to Yosuke Goto.

At least 37 records · Page 2Linked to original sources

arXiv2020

Synthesis of RE123 high-Tc superconductors with a high-entropy-alloy-type RE site

We have synthesized high-entropy-alloy-type (HEA-type) RE123 superconductors Y0.28Nd0.16Sm0.18Eu0.18Gd0.20Ba2Cu3O7-d and Y0.18La0.24Nd0.14Sm0.14Eu0.15Gd0.15Ba2Cu3O7-d with a superconducting transition temperature (Tc) exceeding 90 K. From comparison between HEA-type and conventional RE123 samples, we found that the mixing entropy at the rare earth site does not affect Tc and critical current density (Jc) of the RE123 samples. For all the examined samples, orthorhombicity was found to be an essential parameter for Tc and Jc. In the regime near orthorhombic-tetragonal boundary, Jc for the HEA-type sample was larger than that of conventional-type samples, which suggests that HEA-type RE123 may be useful to improve Jc in the structure with low orthorhombicity.

cond-mat.supr-con↗

arXiv2020

Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex

We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The emergence of superconductivity in CeOBiS2-xSex was explained with two essential parameters of in-plane chemical pressure and carrier concentration, which systematically changed with increasing Se concentration.

cond-mat.supr-con↗

arXiv2020

Superconducting properties of high-entropy-alloy tellurides M-Te (M: Ag, In, Cd, Sn, Sb, Pb, Bi) with a NaCl-type structure

High-entropy-alloy-type tellurides M-Te, which contain five different metals of M = Ag, In, Cd, Sn, Sb, Pb, and Bi, were synthesized using high pressure synthesis. Structural characterization revealed that all the obtained samples have a cubic NaCl-type structure. Six samples, namely AgCdSnSbPbTe5, AgInSnSbPbTe5, AgCdInSnSbTe5, AgCdSnPbBiTe5, AgCdInPbBiTe5, and AgCdInSnBiTe5 showed superconductivity. The highest transition temperature (Tc) among those samples was 1.4 K for AgInSnSbPbTe5. A sample of AgCdInSbPbTe5 showed a semiconductor-like transport behavior. From the relationship between Tc and lattice constant, it was found that a higher Tc is observed for a telluride with a larger lattice constant.

cond-mat.supr-con↗

arXiv2019

Superconductivity in Se-doped La2O2Bi2Pb2S6-xSex with a Bi2Pb2Ch4-type thick conducting layer

La2O2Bi2Pb2S6 is a layered Bi-based oxychalcogenide with a thick four-layer-type conducting layer. Although La2O2Bi2Pb2S6 is a structural analogue of La2O2Bi3AgS6, which is a superconductor, insulating behavior has been observed in La2O2Bi2Pb2S6 at low temperatures, and no superconductivity has been reported. Herein, we demonstrate superconductivity in La2O2Bi2Pb2S6-xSex via partial substitution of Se in the S sites. Owing to the Se doping, the normal state electrical resistivity of La2O2Bi2Pb2S6-xSex at low temperatures was dramatically suppressed, and superconductivity was observed at a transition temperature (Tc) of 1.15 K for x = 0.5. Tc increased with increasing Se concentration: Tc = 1.9 K for x = 1.0. The emergence of metallicity and superconductivity was explained via in-plane chemical pressure effects that can suppress local disorder and carrier localization, which are commonly observed in two-layer-type BiS2-based systems.

cond-mat.supr-con↗

arXiv2019

Growth of superconducting Sm(O,F)BiS2 single crystals

Superconducting Sm(O,F)BiS2 single crystals were successfully grown using KI-KCl flux. The obtained single crystals were flat-shaped and their size was 500um. The structure and composition of the obtained single crystals were obtained using X-ray diffraction and X-ray spectroscopy. The lattice constants of the obtained Sm(O,F)BiS2 single crystals were evaluated to be a = 3.9672(4) A and c = 13.417(6) A, while their F/(O + F) molar ratio was approximately 0.17. The superconducting transition temperature of the obtained Sm(O,F)BiS2 single crystals was 4.8 K. This was different from the reported Sm(O,F)BiS2 with no superconducting transition above 2 K. The superconducting anisotropies of the upper critical field and effective mass model of the obtained Sm(O,F)BiS2 single crystals were estimated to be approximately 26 and 10, respectively.

cond-mat.supr-con↗

arXiv2019

Pressure-induced superconductivity in layered pnictogen diselenide NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$ (x = 0.3 and 0.7)

Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with anomalous change in c-axis length and/or corrugation in conducting layer. The emergence of superconductivity under high pressure is demonstrated using diamond anvil cell (DAC) with boron-doped diamond electrodes, for x = 0.3 and 0.7 as the representative samples. For Sb-rich one (x = 0.3), we observed a superconducting transition with Tconset = 5.3 K at 50 GPa, which is the first-ever report of the superconductivity in layered SbCh2-based (Ch: chalcogen) compounds. The Tconset of x = 0.3 increased with increasing pressure and reached 7.9 K at 70.8 GPa, followed by the gradual decrease in Tc up to 90 GPa. For Bi-rich one (x = 0.7), a superconducting transition with Tconset = 5.9 K was observed at 43.5 GPa, which is the almost comparable to that of x = 0.3; besides, upper critical field (Hc2) is evaluated to be ~10 T for x = 0.7, which is higher than that of x = 0.3 (Hc2 = 6.7 T at 50 GPa).

cond-mat.supr-con↗

arXiv2019

High-pressure synthesis and superconducting properties of NaCl-type In1-xPbxTe (x = 0-0.8)

We have investigated the Pb-substitution effect on the superconductivity of NaCl-type In1-xPbxTe samples obtained using high-pressure synthesis. Polycrystalline samples with x = 0-0.8 were obtained, and the lattice parameter systematically increased by Pb substitution. The superconducting transition temperature (Tc ~3 K for x = 0) increased to 5.3 K (for x = 0.4) by Pb substitutions. According to the comparison of the electronic states between NaCl-type InTe and PbTe, we consider that the Pb substitution increases electron carriers. Possible mechanisms of the enhancement of Tc in this system have been discussed on the basis of conventional pairing mechanism and the possibility of the relation to the valence-skipping state of In.

cond-mat.supr-con↗

arXiv2019

Improvement of superconducting properties by chemical pressure effect in Eu-doped La2-xEuxO2Bi3Ag0.6Sn0.4S6

We have investigated the substitution effect of Eu on the superconductivity in La2-xEuxO2Bi3Ag0.6Sn0.4S6. Recently, we reported an observation of superconductivity at 0.5 K in a layered oxychalcogenide La2O2Bi3AgS6. The Sn doping at the Ag site was found to raise the superconducting transition temperature, Tc to 2.5 K in La2O2Bi3Ag0.6Sn0.4S6. To further improve the superconducting properties, we have partially substituted Eu for the La site to increase the chemical pressure in La2-xEuxO2Bi3Ag0.6Sn0.4S6 (x = 0.1 to 0.6). With the increase in Eu concentration, x, the lattice constant a was found to shrink, while the lattice constant c was marginally shortened, which suggests that the chemical pressure induced by the Eu doping is uniaxial along the a-axis. Tc was observed to increase with increasing x up to x = 0.4, further decreasing for higher Eu concentrations of x = 0.5 and 0.6. From the magnetic susceptibility and resistivity measurements, the bulk nature of superconductivity has been observed for x = 0.1 to 0.5 with Tc = 2.5 to 4.0 K, respectively. The upper critical field (Bc2) was noted to be 3.5 T for x = 0.4, which also has the highest Tc.

cond-mat.supr-con↗

arXiv2019

Enhanced superconductivity by Na doping in SnAs-based layered compound Na$_{1+x}$Sn$_{2-x}$As$_2$

Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that Na-doping on the Sn site (Na$_{1+x}$Sn$_{2-x}$As$_2$) is effective in enhancing superconductivity, leading to Tc = 2.1 K for x = 0.4. First-principles calculation indicates that such a doping, or Na$_{\rm Sn}$ antisite defects, is energetically favored over other cation vacancies. Our results pave the way for increasing Tc of layered tin pnictide superconductors.

cond-mat.supr-con↗

arXiv2019

Bulk superconductivity in La2O2M4S6-type layered oxychalcogenide La2O2Bi3Ag0.6Sn0.4S5.7Se0.3

Recently, we reported the observation of superconductivity at ~0.5 K in a La2O2M4S6-type (M: metal) layered oxychalcogenide La2O2Bi3AgS6, which is a layered compound related to the BiS2-based superconductor system but possesses a thicker Bi3AgS6-type conducting layer. In this study, we have developed the La2O2Bi3AgS6-type materials by element substitutions to increase the transition temperature (Tc) and to induce bulk nature of superconductivity. A resistivity anomaly observed at 180 K in La2O2Bi3AgS6 was systematically suppressed by Sn substitution for the Ag site. By the Sn substitution, Tc increased, and the shielding volume fraction estimated from magnetization measurements also increased. The highest Tc (= 2.3 K) and the highest shielding volume fraction (~20%) was observed for La2O2Bi3Ag0.6Sn0.4S6. The superconducting properties were further improved by Se substitutions for the S site. By the combinational substitutions of Sn and Se, bulk-superconducting phase of La2O2Bi3Ag0.6Sn0.4S5.7Se0.3 with a Tc of 3.0 K (Tconset = 3.6 K) was obtained.

cond-mat.supr-con↗

arXiv2019

Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2

To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined samples with different DSmix, the increase in DSmix does not largely affect the bond lengths and the bond angle of the BiS2 conducting layer but clearly suppresses the in-plane disorder at the in-plane S1 site, which is the parameter essential for the emergence of bulk superconductivity in the REO0.5F0.5BiS2 system. Bulk nature of superconductivity is enhanced by the increase in DSmix for the present samples. The results of this work clearly show that the increase in mixing entropy at the blocking layer can positively affect the emergence of bulk superconductivity in the conducting layer, which is the evidence of the interaction between the high entropy states of the blocking layers and the physical properties of the conducting layers.

cond-mat.supr-con↗

arXiv2019

Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe

We have investigated the in-plane anisotropy of the c-axis magnetoresistance for single crystals of a BiCh2-based superconductor LaO0.5F0.5BiSSe under in-plane magnetic fields. We observed two-fold symmetry in the c-axis magnetoresistance in the ab-plane of LaO0.5F0.5BiSSe while the crystal possessed a tetragonal square plane with four-fold symmetry. The observed symmetry lowering in magnetoresistance from the structural symmetry may be related to the nematic states, which have been observed in the superconducting states of several unconventional superconductors.

cond-mat.supr-con↗

arXiv2019

Effect of Indium doping on the superconductivity of layered oxychalcogenide La2O2Bi3Ag1-xInxS6

We report on the substitution effect of Indium (In) at the Ag site of layered oxychalcogenide La2O2Bi3Ag1-xInxS6. The Tc decreases with increasing In concentration. A hump in the normal state resistivity at an anomaly temperature (T*) near 180 K was observed for all the samples. The anomaly in the resistivity at T* is indicating the possible occurrence of a charge-density-wave (CDW) transition. The T* does not markedly change by In doping. The x dependence of Seebeck coefficient suggests that carrier concentration does not change by In doping. The EDX analysis indicates small amount of Bi deficiency, which suggests that the Bi site is slightly substituted by In. The CDW transition is robust against the In substitution at Ag site, while Tc is decreasing due to the Bi site substitution by In. On the basis of those analyses, we propose that the suppression of superconductivity in the In-doped La2O2Bi3Ag1-xInxS6 system is caused by negative in-plane chemical pressure effect and partial substitution of In for the in-plane Bi site.

cond-mat.supr-con↗

arXiv2019

Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$

Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. The room-temperature lattice thermal conductivity of less than 1 W/mK is almost independent of x, in contrast to the point-defect scattering model for conventional alloys. The present work provides an avenue for exploring SbSe2-based insulating and BiSe2-based conducting systems.

cond-mat.mtrl-sci↗

arXiv2018

Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.

cond-mat.supr-con↗

arXiv2018

Na1-xSn2P2 as a new member of van der Waals-type layered tin pnictide superconductors

Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crystal structure consists of two layers of a buckled honeycomb network of SnP, bound by the vdW forces and separated by Na ions, as similar to that of NaSn2As2. Amount of Na deficiency (x) was estimated to be 0.074(18) using synchrotron X-ray diffraction. Bulk nature of superconductivity was confirmed by the measurements of electrical resistivity, magnetic susceptibility, and specific heat. First-principles calculation using density functional theory shows that Na1-xSn2P2 and NaSn2As2 have comparable electronic structure, suggesting higher Tc of Na1-xSn2P2 is resulted from increased density of states at the Fermi level due to Na deficiency. Because there are various structural analogues with tin-pnictide (SnPn) conducting layers, our results indicate that SnPn-based layered compounds can be categorized into a novel family of vdW-type superconductors, providing a new platform for studies on physics and chemistry of low-dimensional superconductors.

cond-mat.supr-con↗

arXiv2018

Superconductivity in layered Oxychalcogenide La2O2Bi3AgS6

We report the superconductivity in layered oxychalcogenide La2O2Bi3AgS6 compound. The La2O2Bi3AgS6 compound has been reported recently by our group, which has a tetragonal structure with the space group P4/nmm. The crystal structure of La2O2Bi3AgS6 can be regarded as alternate stacks of LaOBiS2-type layer and rock-salt-type (Bi,Ag)S layer. We measured low-temperature electrical resistivity and observed superconductivity at 0.5 K. The observation of superconductivity in the La2O2Bi3AgS6 should provide us with the successful strategy for developing new superconducting phases by the insertion of a rock-salt-type chalcogenide layer into the van der Waals gap of BiS2-based layered compound like LaOBiS2.

cond-mat.supr-con↗

arXiv2018

Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions

We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.

cond-mat.supr-con↗