arXiv subjects

Yosuke Goto

Publications and source records attributed to Yosuke Goto.

47 records · Page 3Linked to original sources

arXiv2018

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.

cond-mat.mtrl-sci↗

arXiv2018

Superconductivity in REO0.5F0.5BiS2 with high-entropy-alloy-type blocking layers

We synthesized new REO0.5F0.5BiS2 (RE: rare earth) superconductors with the high-entropy-alloy-type (HEA-type) REO blocking layers. According to the RE concentration and the RE ionic radius, the lattice constant of a systematically changed in the HEA-type samples. A sharp superconducting transition was observed in the resistivity measurements for all the HEA-type samples, and the transition temperature of the HEA-type samples was higher than that of typical REO0.5F0.5BiS2. The sharp superconducting transition and the enhanced superconducting properties of the HEA-type samples may indicate the effectiveness of the HEA states of the REO blocking layers in the REO0.5F0.5BiS2 system.

cond-mat.supr-con↗

arXiv2018

Indication of unconventional superconductivity in layered bismuth chalcogenide superconductor LaO0.6F0.4Bi(S,Se)2 revealed by Se isotope effect

We have investigated the Se isotope effect in layered bismuth chalcogenide (BiCh2-based) superconductor LaO0.6F0.4Bi(S,Se)2 with 76Se and 80Se. For all examined samples, the Se concentration, which is linked to the superconducting properties, is successfully controlled within x = 1.09-1.14 in LaO0.6F0.4BiS2-xSex. From the magnetization and electrical resistivity measurements, changes in Tc are not observed for the LaO0.6F0.4Bi(S,Se)2 samples with 76Se and 80Se isotopes. Our results suggest that pairing in the BiCh2-based superconductors is not mediated by phonons, and unconventional superconductivity states may emerge in the BiCh2 layers of LaO0.6F0.4Bi(S,Se)2.

cond-mat.supr-con↗

arXiv2017

Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6

We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.

cond-mat.mtrl-sci↗

arXiv2017

Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)

In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+ ionic radius, the in-plane disorder of the S1 sites significantly decreased, very similar to the trend observed in the Se-substituted systems: LaO0.5F0.5BiS2-xSex and Eu0.5La0.5FBiS2-xSex. Therefore, the emergence of bulk superconductivity upon the suppression of the in-plane disorder at the chalcogen sites is a universal scenario for the BiCh2-based superconductors. In addition, we indicated that the amplitude of vibration along the c-axis of the in-plane chalcogen sites may be related to the Tc in the BiCh2-based superconductors.

cond-mat.supr-con↗

arXiv2017

SnAs-based layered superconductor NaSn2As2

Superconductivity with exotic properties has often been discovered in materials with a layered (two-dimensional) crystal structure. The low dimensionality affects the electronic structure of materials, which could realize a high transition temperature (Tc) and/or unconventional pairing mechanisms. Here, we report the superconductivity in a layered tin arsenide NaSn2As2. The crystal structure consists of (Sn2As2)2- bilayers, which is bound by van-der-Waals forces, separated by Na+ ions. Measurements of electrical resistivity and specific heat confirm the bulk nature of superconductivity of NaSn2As2 with Tc of 1.3 K. Our results propose that the SnAs layers will be a basic structure providing another universality class of a layered superconducting family, and it provides a new platform for the physics and chemistry of low-dimensional superconductors with lone pair electrons.

cond-mat.supr-con↗

arXiv2017

Bulk Superconductivity Induced by Se Substitution in BiCh2-Based Layered Compounds Eu0.5Ce0.5FBiS2-xSex

We report the effect of Se substitution on the crystal structure and superconductivity of BiCh2-based (Ch: S, Se) layered compounds Eu0.5Ce0.5FBiS2-xSex (x = 0-1). Crystal structure analysis showed that both lattice constants, a and c, increased with increasing x, which is different from the related La-doped system, such as Eu0.5La0.5FBiS2-xSex. This is due to Se substitution for both in-plane and out-of-plane Ch sites in the present Ce-doped system. Zero resistivity was observed for x = 0.2-1 above 2 K. Superconducting properties of Eu0.5Ce0.5FBiS2-xSex was investigated by magnetic susceptibility, and the highest superconducting transition temperature of 3.5 K was obtained for x = 0.6 with a large shielding volume fraction. The emergence of bulk superconductivity and metallic conductivity can be qualitatively described in terms of increased in-plane chemical pressure effect. A magnetic anomaly below 8 K, probably because of ferromagnetic order of magnetic moment of Ce3+ ions, coexists with bulk superconductivity in BiCh2 layer. Since the effect of Se substitution on the magnetic transition temperature is ignorable, we suggest that the coupling between the magnetic order at the (Eu,Ce)F layer and superconductivity at the Bi(S,Se)2 layer is weak.

cond-mat.supr-con↗

arXiv2015

Effect of Sn-substitution on Thermoelectric Properties of Copper-based Sulfide, Famatinite Cu3SbS4

Copper-based sulfide is an attractive material for Earth-abundant thermoelectrics. In this study, we demonstrate the effect of Sn-substitution on the electrical and thermal transport properties of fematinite Cu3SbS4 from 300 to 573 K. The carrier concentration is controlled in the range from 4 \times 10^18 to 8 \times 10^20 cm^-3 by Sn-substitution. The density-of-states effective mass is found to be ~3.0 me, assuming the single parabolic band model. The direct-type optical band gap is ~0.9 eV, which is consistent with the density functional theory calculation. The dimensionless figure of merit reaches 0.1 for Sn-doped samples at 573 K.

cond-mat.mtrl-sci↗

arXiv2015

Electronic structure and transport properties of Cu-deficient kuramite Cu3-xSnS4

Electrical and thermal transport properties of Cu-deficient kuramite Cu3-xSnS4 (CTS) was examined as a possible earth-abundant thermoelectric material. Crystallographic structure of CTS was characterized by partial disorder between Cu and Sn. In contrast to semiconducting electrical transport of related compounds, such as Cu2ZnSnS4 and Cu3SbS4, metallic conduction with an electrical resistivity of 0.4 mohmcm and a carrier concentration of 3 \times 10^21 cm-3 was observed at 300 K. Lattice thermal conductivity was calculated at 2.6 Wm^-1K^-1, which was probably reduced by Cu-deficiency and or partial cation disorder. Density functional theory calculation indicates valence band was composed of hybridization between Cu 3d orbitals and S 3p orbitals.

cond-mat.mtrl-sci↗

arXiv2014

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 deg. C in LaOBiS1.2Se0.8.

cond-mat.mtrl-sci↗

arXiv2014

Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO

Layered oxysulfide LaCuSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ~10^5 ohmcm to ~10^-1 ohmcm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm^-1K^-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

cond-mat.mtrl-sci↗