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Yosuke Harashima

Publications and source records attributed to Yosuke Harashima.

21 records · Page 2Linked to original sources

Nitrogen as the best interstitial dopant among $X$=B, C, N, O and F for strong permanent magnet NdFe$_{11}$Ti$X$: First-principles study

We study magnetic properties of NdFe$_{11}$Ti$X$, where $X$=B, C, N, O, and F, by using the first-principles calculation based on the density functional theory. Its parent compound NdFe$_{11}$Ti has the ThMn$_{12}$ structure, which has the symmetry of space group $I4/mmm$, No. 139. The magnetization increases by doping B, C, N, O, and F at the $2b$ site of the ThMn$_{12}$ structure. The amount of the increase is larger for $X$=N, O, F than for $X$=B, C. On the other hand, the crystal field parameter $\langle r^{2} \rangle A_{0}^{2}$, which controls the axial magnetic anisotropy of the Nd $4f$ magnetic moment, depends differently on the dopant. With increase of the atomic number from $X$=B, $\langle r^{2} \rangle A_{0}^{2}$ increases, takes a maximum value for $X$=N, and then turns to decrease. This suggests that in NdFe$_{11}$Ti$X$, nitrogen is the most appropriate dopant among B, C, N, O, and F for permanent magnets in terms of magnetization and anisotropy. The above calculated properties are explained based on the detailed analysis of the electronic structures of NdFe$_{11}$Ti$X$.

cond-mat.mtrl-sci↗

Critical exponent of metal-insulator transition in doped semiconductors: the relevance of the Coulomb interaction

We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-Sham eigenfunctions, we find $ν\approx 1.3$ for the critical exponent of the correlation length. This differs from that of Anderson's model of localization and suggests that the Coulomb interaction changes the universality class of the transition.

cond-mat.dis-nn↗

Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

cond-mat.mtrl-sci↗