arXiv subjects

Young Sun

Publications and source records attributed to Young Sun.

At least 37 records · Page 2Linked to original sources

arXiv2021

Charge-driven transtive devices via electric field control of magnetism in a helimagnet

Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux (ϕ) via linear and non-linear ME effects, respectively. It is found here that large variation of magnetization by electric field is realized in both linear and nonlinear hysteretic styles in a magnetoelectric Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22 single-crystal. Moreover, based on the spin current model, the underlying microscopic mechanisms for generating the two types of linear and nonlinear M vs E curves are understood as E induced changes of cone angle and sign of P respectively, establishing the charge-driven transtor and memtranstor in the Y-type hexaferrite system. This work points to a promising pathway to develop unique circuit functionalities using the magnetoelectric materials.

cond-mat.mtrl-sci↗

arXiv2021

Giant magnetostriction and nonsaturating electric polarization up to 60 T in the polar magnet CaBaCo4O7

Giant magnetostriction in insulating magnetic materials is highly required for applications but is rarely observed. Here we show that giant magnetostriction (> 1500 ppm) can be achieved in an insulating transition metal oxide CaBaCo4O7 where the ferrimagnetic ordering at TC ~ 62 K is associated with a huge change in the lattice. Moreover, because this material is pyroelectric with a non-switchable electric polarization (P), the giant magnetostriction results in a record-breaking magnetoelectric effect - a gigantic change of electric polarization (deltaP ~ 1.6 μC/cm2) in response to the applied magnetic field up to 60 T. Geometric frustration as well as the orbital instability of Co2+/Co3+ ions is believed to play a crucial role in the giant magnetostriction. Our study provides new insights on how to achieve both giant magnetostriction and pronounced magnetoelectric effect in insulating transition metal oxides.

cond-mat.str-el↗

arXiv2021

Probe Skyrmion phases and dynamics in MnSi via the magnetoelectric effect in a composite configuration

We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration. The study on a MnSi single crystal sample using this technique provides clear evidences for the skyrmion lattice phase and coexistence of skyrmion and conical phase. Above the Curie temperature TC, a region with strong spin fluctuation is revealed as well. By tuning the density of Skyrmion or disorder, a transition from the skyrmion lattice to skyrmion-conical coexisting phase is observed. The observation is in good agreement with a theoretical model which predicts the dissipation behavior in the coexistence phase.

cond-mat.mtrl-sci↗

arXiv2021

Reentrance of spin-driven ferroelectricity through rotational tunneling of ammonium

Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represents the quantum phenomenon of the librational motion of molecules is ubiquitous in hydrogen-contained materials. However, its direct manifestation in realizing macroscopic physical properties is elusive. Here we report an observation of reentrant ferroelectricity under low pressure that is mediated by the rotational tunneling of ammonium ions in molecule-based (NH$_4$)$_2$FeCl$_5 \cdot$H$_2$O. Applying a small pressure leads to a transition from spin-driven ferroelectricity to paraelectricity coinciding with the stabilization of a collinear magnetic phase. Such a transition is attributed to the hydrogen bond fluctuations via the rotational tunneling of ammonium groups as supported by theoretical calculations. Higher pressure lifts the quantum fluctuations and leads to a reentrant ferroelectric phase concomitant with another incommensurate magnetic phase. These results demonstrate that the rotational tunneling emerges as a new route to control magnetic-related properties in soft magnets, opening avenues for designing multi-functional materials and realizing potential quantum control.

cond-mat.mtrl-sci↗

arXiv2020

Room-temperature giant magnetotranstance effect in single-phase multiferroics

Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects, low operating temperature, and small electric polarization induced by magnetic orders. As a result, current studies on applications of the magnetoelectric effects are mainly focusing on multiferroic heterostructures and composites. Here we report a room-temperature giant effect in response to external magnetic fields in single-phase multiferroics. A low magnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferrites BaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able to cause a huge change in the linear magnetoelectric coefficient by several orders, leading to a giant magnetotranstance (GMT) effect at room temperature. The GMT effect is comparable to the well-known giant magnetoresistance (GMR) effect in magnetic multilayers, and thus opens up a door toward practical applications for single-phase multiferroics.

cond-mat.mtrl-sci↗

arXiv2019

Large Magnetoelectric Response in Sr2IrO4/SrTiO3 superlattices with non-equivalent interfaces

Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.

cond-mat.str-el↗

arXiv2018

Measurement of the angle dependence of magnetostriction in pulsed magnetic fields using a piezoelectric strain gauge

We present a high resolution method for measuring magnetostriction in millisecond pulsed magnetic fields at cryogenic temperatures with a sensitivity of $1.11\times10^{-11}/\sqrt{\rm Hz}$. The sample is bonded to a thin piezoelectric plate, such that when the sample's length changes, it strains the piezoelectric and induces a voltage change. This method is more sensitive than a fiber-Bragg grating method. It measures two axes simultaneously instead of one. The gauge is small and versatile, functioning in DC and millisecond pulsed magnetic fields. We demonstrate its use by measuring the magnetostriction of Ca$_3$Co$_{1.03}$Mn$_{0.97}$O$_6$ single crystals in pulsed magnetic fields. By comparing our data to new and previously published results from a fiber-Bragg grating magnetostriction setup, we confirm that this method detects magnetostriction effects. We also demonstrate the small size and versatility of this technique by measuring angle dependence with respect to the applied magnetic field in a rotator probe in 65 T millisecond pulsed magnetic fields.

cond-mat.mtrl-sci↗

arXiv2018

Electromagnon in Y-type hexaferrite BaSrCoZnFe$_{11}$AlO$_{22}$

We investigated static and dynamic magnetoelectric properties of single crystalline BaSrCoZnFe$_{11}$AlO$_{22}$ which is a room-temperature multiferroic with Y-type hexaferrite crystal structure. Below $300\,\rm K$, a purely electric-dipole-active electromagnon at $\approx 1.2\,\rm THz$ with the electric polarization oscillating along the hexagonal axis was observed by THz and Raman spectroscopies. We investigated the behavior of the electromagnon with applied DC magnetic field and linked its properties to static measurements of the magnetic structure. Our analytical calculations determined selection rules for electromagnons activated by the magnetostriction mechanism in various magnetic structures of Y-type hexaferrite. Comparison with our experiment supports that the electromagnon is indeed activated by the magnetostriction mechanism involving spin vibrations along the hexagonal axis.

cond-mat.mtrl-sci↗

arXiv2017

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

cond-mat.supr-con↗

arXiv2017

Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δ.

cond-mat.mtrl-sci↗

arXiv2016

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

cs.ET↗

arXiv2016

Electromagnon in the Z-type hexaferrite $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$

We studied experimentally the high-temperature magnetoelectric $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$ prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5) using inelastic neutron scattering, THz time-domain, Raman and far-infrared spectroscopies. The spectra, measured with varying temperature and magnetic field, reveal rich information about the collective spin and lattice excitations. In the ceramics, we observed an infrared-active magnon which is absent in $E^ω\perp z$ polarized THz spectra of the crystal, and we assume that it is an electromagnon active in $E^ω \| z$ polarized spectra. On heating from 7 to 250 K, the frequency of this electromagnon drops from 36 to 25 cm$^{-1}$ and its damping gradually increases, so it becomes overdamped at room temperature. Applying external magnetic field has a similar effect on the damping and frequency of the electromagnon, and the mode is no more observable in the THz spectra above 2 T, as the transverse-conical magnetic structure transforms into a collinear one. Raman spectra reveal another spin excitation with a slightly different frequency and much higher damping. Upon applying magnetic field higher than 3 T, in the low-frequency part of the THz spectra, a narrow excitation appears whose frequency linearly increases with magnetic field. We interpret this feature as the ferromagnetic resonance.

cond-mat.mtrl-sci↗

arXiv2016

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

cond-mat.mtrl-sci↗

arXiv2016

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

cond-mat.mtrl-sci↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Quantum electric-dipole liquid on a triangular lattice

Geometric frustrations and quantum mechanical fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets that represents an exotic phase of matter and is attracting enormous interests. Geometric frustrations and quantum fluctuations can happen beyond magnetic systems. Here we propose that quantum electric-dipole liquids, analogs to quantum spin liquids, could emerge in frustrated dielectrics where antiferroelectrically coupled small electric dipoles reside on a triangular lattice. The quantum paraelectric hexaferrite BaFe12O19, in which small electric dipoles originated from the off-center displacement of Fe3+ in the FeO5 bipyramids constitute a two-dimensional triangular lattice, represents a promising candidate to generate the anticipated electric-dipole liquid. We present a series of experimental evidences, including dielectric permittivity, heat capacity, and thermal conductivity measured down to 66 mK, to reveal the existence of a nontrivial ground state in BaFe12O19, characterized by itinerant low-energy excitations with a small gap, to which we interpret as an exotic liquid-like quantum phase. The quantum electric-dipole liquids in frustrated dielectrics open up a fresh playground for fundamental physics and may find applications in quantum information and computation as well.

cond-mat.str-el↗

arXiv2015

Quantum Critical Point study in Multiferroic Hexaferrites: BaFe12O19, SrFe12O19, and PbFe3Ga9O19 -- Verification of the Khmelnitskii Theory

BaFe12O19 is a popular M-type hexaferrite with T(Neel) = 720 K of enormous commercial value (3 billion dollars/year). It exhibits an incipient ferroelectric phase transition (in violation of the Spaldin-Hill rule) extrapolated to lie at 6.0 K Kelvin but suppressed due to quantum fluctuations (as in SrTiO3). The QCP theory of Khmelnitskii for such uniaxial ferroelectrics predicts that the inverse isothermal electric susceptibility varies as T cubed, in contrast to that for pseudo-cubic materials such as SrTiO3 or KTaO3, a hypothesis we verify.

cond-mat.mtrl-sci↗

arXiv2015

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.

cond-mat.mes-hall↗