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Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

cond-mat.mes-hall↗

Molecular Dynamics Simulations of Single-Layer Molybdenum Disulphide (MoS2): Stillinger-Weber Parametrization, Mechanical Properties, and Thermal Conductivity

We present a parameterization of the Stillinger-Weber potential to describe the interatomic interactions within single-layer MoS2 (SLMoS2). The potential parameters are fitted to an experimentally-obtained phonon spectrum, and the resulting empirical potential provides a good description for the energy gap and the crossover in the phonon spectrum. Using this potential, we perform classical molecular dynamics simulations to study chirality, size, and strain effects on the Young's modulus and the thermal conductivity of SLMoS2. We demonstrate the importance of the free edges on the mechanical and thermal properties of SLMoS2 nanoribbons. Specifically, while edge effects are found to reduce the Young's modulus of SLMoS2 nanoribbons, the free edges also reduce the thermal stability of SLMoS2 nanoribbons, which may induce melting well below the bulk melt temperature. Finally, uniaxial strain is found to efficiently manipulate the thermal conductivity of infinite, periodic SLMoS2.

cond-mat.mtrl-sci↗

The phase diagram of ice: a quasi-harmonic study based on a flexible water model

The phase diagram of ice is studied by a quasi-harmonic approximation. The free energy of all experimentally known ice phases has been calculated with the flexible q-TIP4P/F model of water. The only exception is the high pressure ice X, in which the presence of symmetric O-H-O bonds prevents its modeling with this empirical interatomic potential. The simplicity of our approach allows us to study ice phases at state points of the T-P plane that have been omitted in previous simulations using free energy methods based on thermodynamic integration. The effect in the phase diagram of averaging the proton disorder that appears in several ice phases has been studied. It is found particularly relevant for ice III, at least for cell sizes typically used in phase coexistence simulations. New insight into the capability of the employed water model to describe the coexistence of ice phases is presented. We find that the H-ordered ices IX and XIV, as well as the H-disordered ice XII, are particularly stable for this water model. This fact disagrees with experimental data. The unexpected large stability of ice IX is a property related to the TIP4P-character of the water model. Only after omission of these three stable ice phases, the calculated phase diagram becomes in reasonable qualitative agreement to the experimental one in the T-P region corresponding to ice Ih, II, III, V, and VI. The calculation of the phase diagram in the quantum and classical limits shows that the most important quantum effect is the stabilization of ice II due to its lower zero-point energy when compared to that one of ices Ih, III, and V.

physics.chem-ph↗

Effective Scattering Cross-section in Lattice Thermal Conductivity Calculation with Differential Effective Medium Method

To further reduce the lattice thermal conductivity of thermoelectric materials, the technique of embedding nano-inclusions into bulk matrix materials, in addition to point defect scattering via alloying, was widely applied. Differential Effective Medium (DEM) method was employed to calculate two-phase heterogeneous systems. However, in most effective medium treatment, the interface scattering of matrix phonons by embedded nanoparticle was underestimated by adopting particle's projected area as scattering cross-section. Herein, modified cross-section calculations, as well as grain sizes dispersions, are applied in DEM, with the calculations then validated by comparing with Monte-Carlo simulations and existing experimental data. Predictions of lattice thermal conductivity reduction on in-situ formed Full Heusler(FH)/Half Heusler(HH) nano/matrix system are discussed.

cond-mat.mtrl-sci↗

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

cond-mat.mtrl-sci↗

Anisotropic Bruggeman Effective Medium Approaches for Slanted Columnar Thin Films

Two different formalisms for the homogenization of composite materials containing ellipsoidal inclusions based on Bruggeman's original formula for spherical inclusions can be found in the literature. Both approximations determine the effective macroscopic permittivity of such an idealized composite assuming randomly distributed dielectric particles of equal shape and differ only in the definition of the depolarization factors. The two approaches are applied to analyze ellipsometric Mueller matrix spectra acquired in the visible and near-infrared spectral region from metal and semiconductor slanted columnar thin films. Furthermore, the effective dielectric function tensor generated by the two Bruggeman formalisms is compared to effective major axes dielectric functions individually determined with a homogeneous biaxial layer approach. Best-match model parameters of all three model approaches are discussed and compared to estimates from scanning electron microscope images. The structural parameters obtained from all three optical modeling approaches agree well with the electron microscopy technique. A comparative discussion is given for the validity and applicability of the three model approaches for analysis of future devices structures that may require optical readout using generalized ellipsometry methods.

physics.optics↗

Enhancing high-temperature thermoelectric properties of PtAs2 by Rh doping

The effects of Rh doping on the thermoelectric properties of Pt1-xRhxAs2 (x = 0, 0.005, and 0.01) with pyrite structure were studied by conducting measurements of electrical resistivity rho, Seebeck coefficient S, and thermal conductivity kappa. The sample with x = 0.005 exhibited large S and low rho, resulting in a maximum power factor (S^2/rho) of 65 muW/cmK^2 at 440 K. The peculiarly shaped "corrugated flat band" predicted for PtSb2 might explain the enhanced thermoelectric properties of doped PtAs2.

cond-mat.str-el↗

Heteroepitaxial Growth and Multiferroic Properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V Semiconductor GaAs

Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.

cond-mat.mtrl-sci↗

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent ζ ranges from 0.39 to 0.48 and the DW creep exponent μ varies from 0.20 to 0.28, revealing an unexpected effective dimensionality of ~1.5 that is independent of film thickness. Our results suggest predominantly 2D ferroelectricity in the layered polymer and we attribute the fractal dimensionality to DW deroughening due to the correlations between the in-plane and out-of-plane polarization, an effect that can be exploited to achieve high lateral domain density for developing nanoscale ferroelectrics-based applications.

cond-mat.mtrl-sci↗

Enhanced ferromagnetic moment in Co-doped BiFeO3 thin films studied by soft X-ray circular dichroism

BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD) studies of BiFe$_{1-x}$Co$_x$O$_3$ ({\it x} = 0 to 0.30) (BFCO) thin films grown on LaAlO$_3$(001) substrates. The XAS results indicated that the Fe and Co ions are in the Fe$^{3+}$ and Co$^{3+}$ states. The XMCD results showed that the Fe ions show ferromagnetism while the Co ions are antiferromagnetic at room temperature. The XAS and XMCD measurements also revealed that part of the Fe$^{3+}$ ions are tetrahedrally co-ordinated by oxygen ions but that the XMCD signals of the octahedrally coordinated Fe$^{3+}$ ions increase with Co content. The results suggest that an impurity phase such as the ferrimagnetic $γ$-Fe$_2$O$_3$ which exists at low Co concentration decreases with increasing Co concentration and that the ferromagnetic component of the Fe$^{3+}$ ion in the octrahedral crystal fields increases with Co concentration, probably reflecting the increased canting of the Fe$^{3+}$ ions.

cond-mat.mtrl-sci↗

Exploring electrical conductivity within mesoscopic phases of semi-conducting PEDOT:PSS films by Broadband Dielectric Spectroscopy

Poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonic acid (PEDOT:PSS), an optically transparent organic semi-conductor, constitutes a suspension of conducting PEDOT:PSS grains, shelled by an insulating layer of PSS. While a percolation network enhances dc conductivity, structural and electrical inhomogenity hinters electric charge flow giving rise to capacitance effects. In the present work, two distinct relaxation mechanisms are detected by Broadband Dielectric Spectroscopy (BDS). Double polarization mechamisms are predicted by bi-phase suspension dielectric theory. Within the frame of interfacial polarization, we propose a methodology to have an insight into the local conductivity of the interior of mesoscopic conducting phase.

cond-mat.mtrl-sci↗

Gate depletion of an InSb two-dimensional electron gas

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

cond-mat.mes-hall↗

Quantum charge pumping in graphene-based devices: When lattice defects do help

Quantum charge pumping, the quantum coherent generation of a dc current at zero bias through time dependent potentials, provides outstanding opportunities for metrology and the development of new devices. The long electronic coherence times and high quality of the crystal structure of graphene may provide suitable building blocks for such quantum pumps. Here, we focus in adiabatic quantum pumping through graphene nanoribbons in the Fabry-Pérot regime highlighting the crucial role of defects by using atomistic simulations. We show that even a single defect added to the pristine structure may produce a two orders of magnitude increase in the pumped charge.

cond-mat.mes-hall↗

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes.

cond-mat.mes-hall↗

Anisotropic electronic properties of a-axis-oriented Sr2IrO4 epitaxial thin-films

We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E//c spectra show only the latter. The structural anisotropy created by biaxial strain in a-axis-oriented thin-films also changes the electronic structure and gap energy. These a-axis-oriented, epitaxial thin-films provide a powerful tool to investigate the highly anisotropic electronic properties of Sr2IrO4.

cond-mat.str-el↗

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak.

cond-mat.mtrl-sci↗

Magnetic and transport properties of Mn2CoAl oriented thin films

The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

cond-mat.mtrl-sci↗

Structural and Electronic Properties of Hybrid Perovskites for High-Efficiency Thin-Film Photovoltaics from First-Principles

The performance of perovskite solar cells recently exceeded 15% solar-to-electricity conversion efficiency for small-area devices. The fundamental properties of the active absorber layers, hybrid organic-inorganic perovskites formed from mixing metal and organic halides [\textit{e.g.} (NH$_4$)PbI$_3$ and (CH$_3$NH$_3$)PbI$_3$], are largely unknown. The materials are semiconductors with direct band gaps at the boundary of the first Brillouin zone. The calculated dielectric response and band gaps show an orientation dependence, with a low barrier for rotation of the organic cations. Due to the electric dipole of the methylammonium cation, a photoferroic effect may be accessible, which could enhance carrier collection.

cond-mat.mtrl-sci↗