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arXiv · 0710.2060

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Daniele Bajoni·Pascale Senellart·Esther Wertz·Isabelle Sagnes·Audrey Miard·Aristide Lemaître·Jacqueline Bloch
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Abstract

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

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Daniele Bajoni, Pascale Senellart, Esther Wertz, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Jacqueline Bloch. 2007-12-03. Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities. https://doi.org/10.1103/physrevlett.100.047401

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