Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers

V. V. Talanov; A. Scherz; A. R. Schwartz

doi:10.1063/1.2216898

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arXiv · 1108.2225

Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers

V. V. Talanov·A. Scherz·A. R. Schwartz

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Abstract

We have demonstrated a technique capable of in-line measurement of dielectric constant of low-k interconnect films on patterned wafers utilizing a test key of ~50x50 \mu m in size. The test key consists of a low-k film backed by a Cu grid with >50% metal pattern density and <250 nm pitch, which is fully compatible with the existing dual-damascene interconnect manufacturing processes. The technique is based on a near-field scanned microwave probe and is noncontact, noninvasive, and requires no electrical contact to or grounding of the wafer under test. It yields <0.3% precision and 2% accuracy for the film dielectric constant.

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V. V. Talanov, A. Scherz, A. R. Schwartz. 2011-08-10. Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers. https://doi.org/10.1063/1.2216898

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