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arXiv · 1110.4760

Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations

S. Burger·L. Zschiedrich·J. Pomplun·F. Schmidt·A. Kato·C. Laubis·F. Scholze
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Abstract

EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.

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S. Burger, L. Zschiedrich, J. Pomplun, F. Schmidt, A. Kato, C. Laubis, F. Scholze. 2011-10-21. Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations. https://doi.org/10.1117/12.896839

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