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arXiv · 1205.1337

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Zheng Han·Amina Kimouche·Adrien Allain·Hadi Arjmandi-Tash·Antoine Reserbat-Plantey·Sébastien Pairis·Valérie Reita·Nedjma Bendiab·Johann Coraux·Vincent Bouchiat
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Abstract

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.

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Zheng Han, Amina Kimouche, Adrien Allain, Hadi Arjmandi-Tash, Antoine Reserbat-Plantey, Sébastien Pairis, Valérie Reita, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat. 2012-05-07. Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper. https://doi.org/10.1002/adfm.201301732

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