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arXiv · 1209.2987

Infrared dielectric properties of low-stress silicon nitride

Giuseppe Cataldo·James A. Beall·Hsiao-Mei Cho·Brendan McAndrew·Michael D. Niemack·Edward J. Wollack
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Abstract

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

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Giuseppe Cataldo, James A. Beall, Hsiao-Mei Cho, Brendan McAndrew, Michael D. Niemack, Edward J. Wollack. 2012-09-13. Infrared dielectric properties of low-stress silicon nitride. https://doi.org/10.1364/ol.37.004200

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