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arXiv · 1209.3223

Thulium-doped silica fibers with enhanced 3H4 level lifetime: modelling the devices for 800-820 nm band

Pavel Peterka·Ivan Kasik·Anirban Dhar·Bernard Dussardier·Wilfried Blanc
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Abstract

Silica-based thulium-doped fiber devices operating around 810 nm would extend the spectral range covered by high- power fiber devices. Using a comprehensive numerical model of the fiber we have shown that efficient lasing at 810 nm can be achieved for specific ranges of the laser cavity parameters in silica-based thulium-doped fibers with enhanced 3H4 lifetime up to 58 \mus as measured in our highly alumina-codoped fibers. We present optimization of the thulium-doped fiber and laser cavity parameters and also potential applications of the developed host material in amplifiers and broadband sources.

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Pavel Peterka, Ivan Kasik, Anirban Dhar, Bernard Dussardier, Wilfried Blanc. 2012-09-14. Thulium-doped silica fibers with enhanced 3H4 level lifetime: modelling the devices for 800-820 nm band. https://doi.org/10.1117/12.871756

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