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arXiv · 1302.1280

Large and tunable photo-thermoelectric effect in single-layer MoS2

Michele Buscema·Maria Barkelid·Val Zwiller·Herre S. J. van der Zant·Gary A. Steele·Andres Castellanos-Gomez
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Abstract

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

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Michele Buscema, Maria Barkelid, Val Zwiller, Herre S. J. van der Zant, Gary A. Steele, Andres Castellanos-Gomez. 2013-02-06. Large and tunable photo-thermoelectric effect in single-layer MoS2. https://doi.org/10.1021/nl303321g

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