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arXiv · 1305.1837

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Daniel R. Ward·D. E. Savage·M. G. Lagally·S. N. Coppersmith·M. A. Eriksson
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Abstract

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator.

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Daniel R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson. 2013-05-08. Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing. https://doi.org/10.1063/1.4807768

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