Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Joshua O. Island; Michele Buscema; Mariam Barawi; José M. Clamagirand; José R. Ares; Carlos Sánchez; Isabel J. Ferrer; Gary A. Steele; Herre S. J. van der Zant; Andres Castellanos-Gomez

doi:10.1002/adom.201400043

arXiv · 1406.5003

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Joshua O. Island·Michele Buscema·Mariam Barawi·José M. Clamagirand·José R. Ares·Carlos Sánchez·Isabel J. Ferrer·Gary A. Steele·Herre S. J. van der Zant·Andres Castellanos-Gomez

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Abstract

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dB) up to 1000 Hz. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date.

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Joshua O. Island, Michele Buscema, Mariam Barawi, José M. Clamagirand, José R. Ares, Carlos Sánchez, Isabel J. Ferrer, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez. 2014-06-19. Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors. https://doi.org/10.1002/adom.201400043

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