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arXiv · 1412.4304

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Deep Jariwala·Vinod K. Sangwan·Jung-Woo Ted Seo·Weichao Xu·Jeremy Smith·Chris H. Kim·Lincoln J. Lauhon·Tobin J. Marks·Mark C. Hersam
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Abstract

The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.

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BibTeXRIS

Deep Jariwala, Vinod K. Sangwan, Jung-Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam. 2014-12-14. Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors. https://doi.org/10.1021/nl5037484

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