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arXiv · 1504.01922

Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

Wenmin Yang·Shuo Yang·Qinghua Zhang·Yang Xu·Shipeng Shen·Jian Liao·Jing Teng·Cewen Nan·Lin Gu·Young Sun·Kehui Wu·Yongqing Li
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Abstract

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.

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Wenmin Yang, Shuo Yang, Qinghua Zhang, Yang Xu, Shipeng Shen, Jian Liao, Jing Teng, Cewen Nan, Lin Gu, Young Sun, Kehui Wu, Yongqing Li. 2015-04-08. Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy. https://doi.org/10.1063/1.4895073

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