Scaling Theory of Electrically Doped 2D Transistors

Hesameddin Ilatikhameneh; Gerhard Klimeck; Joerg Appenzeller; Rajib Rahman

doi:10.1109/led.2015.2436356

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arXiv · 1504.03387

Scaling Theory of Electrically Doped 2D Transistors

Hesameddin Ilatikhameneh·Gerhard Klimeck·Joerg Appenzeller·Rajib Rahman

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Abstract

In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations verify the theory and show that the critical design parameters are the physical oxide thickness and distance between the gates. Accordingly, the most optimized electrically doped devices are those with the smallest spacing between the gates and the thinnest oxide, and not the smallest EOT.

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Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman. 2015-04-13. Scaling Theory of Electrically Doped 2D Transistors. https://doi.org/10.1109/led.2015.2436356

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