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arXiv · 1508.00453

Dielectric Engineered Tunnel Field-Effect Transistor

Hesameddin Ilatikhameneh·Tarek A. Ameen·Gerhard Klimeck·Joerg Appenzeller·Rajib Rahman
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Abstract

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs.

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Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman. 2015-08-03. Dielectric Engineered Tunnel Field-Effect Transistor. https://doi.org/10.1109/led.2015.2474147

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