arXiv · 1509.05185
Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate
Abstract
Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation annealing step strongly reverberate in the properties of the implanted ions. We find that hot implantation leads to a higher activation rate of the ions. At high enough fluences, the relation between the fluence and final concentration of ions becomes non-linear. Two models are developed explaining the observed behaviour.
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Nadezhda Kukharchyk, Stepan Shvarkov, Sebastian Probst, Kangwei Xia, Hans-Werner Becker, Shovon Pal, Sergej Markmann, Roman Kolesov, Petr Siyushev, Jörg Wrachtrup, Arne Ludwig, Alexey V. Ustinov, Andreas D. Wieck, Pavel Bushev. 2015-09-17. Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate. https://doi.org/10.1016/j.jlumin.2016.05.010
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