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arXiv · 1510.01876

Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

G. Coiffard·K-F. Schuster·E. F. C. Driessen·S. Pignard·M. Calvo·A. Catalano·J. Goupy·A. Monfardini
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Abstract

We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 W/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.

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G. Coiffard, K-F. Schuster, E. F. C. Driessen, S. Pignard, M. Calvo, A. Catalano, J. Goupy, A. Monfardini. 2016-01-07. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array. https://doi.org/10.1007/s10909-016-1489-9

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