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arXiv · 1512.08153

On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

Ilya Goykhman·Ugo Sassi·Boris Desiatov·Noa Mazurski·Silvia Milana·Domenico de Fazio·Anna Eiden·Jacob Khurgin·Joseph Shappir·Uriel Levy·Andrea C. Ferrari
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Abstract

We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

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Ilya Goykhman, Ugo Sassi, Boris Desiatov, Noa Mazurski, Silvia Milana, Domenico de Fazio, Anna Eiden, Jacob Khurgin, Joseph Shappir, Uriel Levy, Andrea C. Ferrari. 2015-12-26. On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain. https://doi.org/10.1021/acs.nanolett.5b05216

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