Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering

Kristof Moors; Bart Sorée; Wim Magnus

doi:10.1016/j.mee.2016.10.015

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arXiv · 1606.05972

Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering

Kristof Moors·Bart Sorée·Wim Magnus

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Abstract

A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters.

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Kristof Moors, Bart Sorée, Wim Magnus. 2016-06-20. Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. https://doi.org/10.1016/j.mee.2016.10.015

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