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arXiv · 1608.07171

Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes

T. N. Tran Thi·B. Fernandez·D. Eon·E. Gheeraert·J. Hartwig·T. A. Lafford·A. Perrat-Mabilon·C. Peaucelle·P. Olivero·E. Bustarret
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Abstract

A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2.

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T. N. Tran Thi, B. Fernandez, D. Eon, E. Gheeraert, J. Hartwig, T. A. Lafford, A. Perrat-Mabilon, C. Peaucelle, P. Olivero, E. Bustarret. 2016-08-25. Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes. https://doi.org/10.1002/pssa.201100038

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