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arXiv · 1706.02439

Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

YongJin Cho·Zongyang Hu·Kazuki Nomoto·Huili Grace Xing·Debdeep Jena
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Abstract

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off current ratio and interband photon emission. The measured electroluminescence spectrum is dominated by strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.

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YongJin Cho, Zongyang Hu, Kazuki Nomoto, Huili Grace Xing, Debdeep Jena. 2017-06-08. Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy. https://doi.org/10.1063/1.4989581

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