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arXiv · 1802.02220

Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers

Harsh Bana·Elisabetta Travaglia·Luca Bignardi·Paolo Lacovig·Charlotte E. Sanders·Maciej Dendzik·Matteo Michiardi·Marco Bianchi·Daniel Lizzit·Francesco Presel·Dario De Angelis·Nicoleta Apostol·Pranab Kumar Das·Jun Fujii·Ivana Vobornik·Rosanna Larciprete·Alessandro Baraldi·Philip Hofmann·Silvano Lizzit
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Abstract

We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.

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Harsh Bana, Elisabetta Travaglia, Luca Bignardi, Paolo Lacovig, Charlotte E. Sanders, Maciej Dendzik, Matteo Michiardi, Marco Bianchi, Daniel Lizzit, Francesco Presel, Dario De Angelis, Nicoleta Apostol, Pranab Kumar Das, Jun Fujii, Ivana Vobornik, Rosanna Larciprete, Alessandro Baraldi, Philip Hofmann, Silvano Lizzit. 2018-02-06. Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers. https://arxiv.org/abs/1802.02220

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