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arXiv · 1806.04928

Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Luca Bignardi·Daniel Lizzit·Harsh Bana·Elisabetta Travaglia·Paolo Lacovig·Charlotte E. Sanders·Maciej Dendzik·Matteo Michiardi·Marco Bianchi·Moritz Ewert·Lars Buß·Jens Falta·Jan Ingo Flege·Alessandro Baraldi·Rosanna Larciprete·Philip Hofmann·Silvano Lizzit
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Abstract

We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.

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Luca Bignardi, Daniel Lizzit, Harsh Bana, Elisabetta Travaglia, Paolo Lacovig, Charlotte E. Sanders, Maciej Dendzik, Matteo Michiardi, Marco Bianchi, Moritz Ewert, Lars Buß, Jens Falta, Jan Ingo Flege, Alessandro Baraldi, Rosanna Larciprete, Philip Hofmann, Silvano Lizzit. 2018-06-13. Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111). https://doi.org/10.1103/physrevmaterials.3.014003

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