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arXiv · 1807.07128

High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

Jean Choukroun·Marco Pala·Shiang Fang·Efthimios Kaxiras·Philippe Dollfus
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Abstract

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analysed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low sub-threshold swings (below 5mV/decade) and Ion/Ioff ratios higher than 1e8 at a supply voltage of 0.3V, making them ideal for ultra-low power consumption.

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Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus. 2018-07-18. High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions. https://doi.org/10.1088/1361-6528%2Faae7df

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