Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications

Piotr Jacek Cegielski; Jens Bolten; Jung Wuk Kim; Florian Schlachter; Christoph Nowak; Thorsten Wahlbrink; Anna Lena Giesecke; Max Christian Lemme

doi:10.1016/j.mee.2018.06.004

arXiv · 1808.01320

Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications

Piotr Jacek Cegielski·Jens Bolten·Jung Wuk Kim·Florian Schlachter·Christoph Nowak·Thorsten Wahlbrink·Anna Lena Giesecke·Max Christian Lemme

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Abstract

In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp distortions and alignment precision of this mix & match approach. By aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate pattern distortions of order of $3 \mu m$ over 6 inch wafer area, overlay accuracy better than $1.2 \mu m$ has been demonstrated. This result can partially be attributed to the flexible SCIL stamp which compensates deformations caused by the presence of particles which would otherwise significantly reduce the alignment precision.

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Piotr Jacek Cegielski, Jens Bolten, Jung Wuk Kim, Florian Schlachter, Christoph Nowak, Thorsten Wahlbrink, Anna Lena Giesecke, Max Christian Lemme. 2018-06-13. Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications. https://doi.org/10.1016/j.mee.2018.06.004

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