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arXiv · 1903.06517

Single Electron-Hole Pair Sensitive Silicon Detector with Surface Event Rejection

Ziqing Hong·Runze Ren·Noah Kurinsky·Enectali Figueroa-Feliciano·Lise Wills·Suhas Ganjam·Rupak Mahapatra·Nader Mirabolfathi·Brian Nebolsky·H. Douglas Pinckney·Mark Platt
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Abstract

We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device.

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Ziqing Hong, Runze Ren, Noah Kurinsky, Enectali Figueroa-Feliciano, Lise Wills, Suhas Ganjam, Rupak Mahapatra, Nader Mirabolfathi, Brian Nebolsky, H. Douglas Pinckney, Mark Platt. 2019-03-15. Single Electron-Hole Pair Sensitive Silicon Detector with Surface Event Rejection. https://doi.org/10.1016/j.nima.2020.163757

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